公开(公告)号：US11742337B2

公开(公告)日：2023-08-29

申请号：US18091423

申请日：2022-12-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi Goto ,  Kazuhito Nakai

IPC: H04B1/40 ,  H01L23/538 ,  H03F1/02 ,  H01L25/16 ,  H01L23/498 ,  H03F3/20 ,  H03F1/56

CPC classification number: H01L25/16 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5383 ,  H03F1/0288 ,  H03F3/20 ,  H04B1/40 ,  H03F1/56 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/451

Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

公开(公告)号：US10284150B2

公开(公告)日：2019-05-07

申请号：US15717161

申请日：2017-09-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuo Watanabe ,  Satoshi Tanaka ,  Kazuhito Nakai ,  Takayuki Tsutsui

IPC: H03F3/04 ,  H03F1/32 ,  H03F3/19 ,  H03F3/21 ,  H04B1/04 ,  H03F1/02 ,  H03F1/30 ,  H03F3/24

Abstract: A power amplification module includes: a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal; a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal; and first and second bias circuits that supply first and second bias currents to bases of the first and second transistors. The first bias circuit includes a third transistor that outputs the first bias current from its emitter or source, a capacitor that is input with the first radio frequency signal and connected to the base of the first transistor, a first resistor connected between the emitter or source of the third transistor and the base of the first transistor, a second resistor connected between the capacitor and the emitter or source of the third transistor, and a third resistor connected between the capacitor and the base of the first transistor.

公开(公告)号：US09825594B2

公开(公告)日：2017-11-21

申请号：US15274313

申请日：2016-09-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuo Watanabe ,  Satoshi Tanaka ,  Kazuhito Nakai ,  Takayuki Tsutsui

IPC: H03F3/04 ,  H03F1/32 ,  H03F3/19 ,  H03F3/21 ,  H04B1/04

CPC classification number: H03F1/3205 ,  H03F1/02 ,  H03F1/0261 ,  H03F1/302 ,  H03F1/32 ,  H03F3/19 ,  H03F3/211 ,  H03F3/24 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/21 ,  H03F2200/451 ,  H03F2201/3215 ,  H03F2203/21106 ,  H04B1/0475 ,  H04B2001/045

Abstract: A power amplification module includes: a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal; a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal; and first and second bias circuits that supply first and second bias currents to bases of the first and second transistors. The first bias circuit includes a third transistor that outputs the first bias current from its emitter or source, a capacitor that is input with the first radio frequency signal and connected to the base of the first transistor, a first resistor connected between the emitter or source of the third transistor and the base of the first transistor, a second resistor connected between the capacitor and the emitter or source of the third transistor, and a third resistor connected between the capacitor and the base of the first transistor.

公开(公告)号：US09642103B2

公开(公告)日：2017-05-02

申请号：US15082567

申请日：2016-03-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi Tanaka ,  Takayuki Tsutsui ,  Yusuke Tanaka ,  Hayato Nakamura ,  Kazuhito Nakai

IPC: H04B7/06 ,  H04W52/00 ,  H04W52/52 ,  H04L5/14 ,  H04B7/26 ,  H04W88/06

CPC classification number: H04W52/52 ,  H03F1/0261 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H04B7/265 ,  H04L5/14 ,  H04W72/042 ,  H04W88/06

Abstract: Provided is a communication unit that includes first and second power-amplification modules, which can be integrated. The first power-amplification module includes a first power-amplifier for a first frequency band in a first communication scheme, a second power-amplifier for a second frequency band in the first communication scheme, a third power-amplifier for a third frequency band in a second communication scheme, a fourth power-amplifier for a fourth frequency band in the second communication scheme, a first bias circuit that generates a first bias current to the first and second power-amplifiers, and a bias current circuit that converts the first bias current into a second bias current to the third and fourth power-amplifiers. The second power-amplification module includes a fifth power-amplifier for a fifth frequency band in the first communication scheme, and a second bias circuit that generates a third bias current to the fifth power-amplifier.