Power amplifier circuit
    1.
    发明授权

    公开(公告)号:US11558014B2

    公开(公告)日:2023-01-17

    申请号:US17323505

    申请日:2021-05-18

    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

    Power amplifier circuit
    2.
    发明授权

    公开(公告)号:US11545944B2

    公开(公告)日:2023-01-03

    申请号:US17151922

    申请日:2021-01-19

    Abstract: A power amplifier circuit includes a power amplifier including a first transistor having a first terminal connected to a reference potential, a second terminal to which a first current and a radio-frequency signal are input, and a third terminal connected to a first power supply potential via a first inductor; a capacitor connected to the third terminal of the first transistor; a second transistor including a first terminal connected to the capacitor and the reference potential via a second inductor, a second terminal to which a second current is input and is connected to the reference potential, and a third terminal connected to the first power supply potential via a third inductor and outputs signal; and an adjustment circuit that outputs a third current corresponding to the first power supply potential or a second power supply potential to the second terminal of the second transistor.

    Power amplifier circuit
    3.
    发明授权

    公开(公告)号:US11043918B2

    公开(公告)日:2021-06-22

    申请号:US16589369

    申请日:2019-10-01

    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

    POWER AMPLIFIER CIRCUIT
    4.
    发明申请

    公开(公告)号:US20200076384A1

    公开(公告)日:2020-03-05

    申请号:US16549057

    申请日:2019-08-23

    Abstract: A power amplifier circuit includes a lower transistor having a first terminal, a second terminal connected to ground, and a third terminal, wherein a first power supply voltage is supplied to the first terminal, and an input signal is supplied to the third terminal; a first capacitor; an upper transistor having a first terminal, a second terminal connected to the first terminal of the lower transistor via the first capacitor, and a third terminal, wherein a second power supply voltage is supplied to the first terminal, an amplified signal is outputted to an output terminal from the first terminal, and a driving voltage is supplied to the third terminal; a first inductor that connects the second terminal of the upper transistor to ground; a voltage regulator circuit; and at least one termination circuit that short-circuits an even-order harmonic or odd-order harmonic of the amplified signal to ground potential.

    Power amplifier circuit, high frequency circuit, and communication apparatus

    公开(公告)号:US12273079B2

    公开(公告)日:2025-04-08

    申请号:US17805259

    申请日:2022-06-03

    Abstract: Increase in power-added efficiency can be achieved. A second base of a second transistor is connected to a first collector of a first transistor. A third base of a third transistor is connected to the first collector of the first transistor, and a third collector of the third transistor is connected to a second collector of the second transistor. A second bias circuit includes a fifth transistor connected to the second base of the second transistor. A third bias circuit includes a sixth transistor connected to the third base of the third transistor. A first current limiting circuit includes a seventh transistor, a first collector resistor, and a first base resistor. A second current limiting circuit includes an eighth transistor, a second collector resistor, and a second base resistor.

    Matching circuit
    6.
    发明授权

    公开(公告)号:US11916529B2

    公开(公告)日:2024-02-27

    申请号:US15730128

    申请日:2017-10-11

    CPC classification number: H03H7/38

    Abstract: A matching circuit performs output impedance matching for an amplifier that amplifies an input signal and outputs an amplified signal. The matching circuit includes a low pass filter and a high pass filter. The ground of the low pass filter and the ground of the high pass filter are isolated from each other.

    Power amplifier circuit
    7.
    发明授权

    公开(公告)号:US11757411B2

    公开(公告)日:2023-09-12

    申请号:US18147849

    申请日:2022-12-29

    CPC classification number: H03F1/0216 H03F3/21 H03F2200/451 H04W88/02

    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

    Semiconductor chip
    8.
    发明授权

    公开(公告)号:US11145607B2

    公开(公告)日:2021-10-12

    申请号:US16838977

    申请日:2020-04-02

    Abstract: A semiconductor chip includes a compound semiconductor substrate having a pair of main surfaces and a side surface therebetween, a circuit on one main surface of the pair of main surfaces, and first metals on the main surface. The first metals are positioned, in plan view of the main surface, closer to an outer edge of the main surface than the circuit, substantially in a ring shape to surround the circuit with gaps between first metals adjacent to each other. The semiconductor chip further includes second metals on the main surface. The second metals are positioned, in plan view of the main surface, between the circuit and the first metals or closer to the outer edge than the first metals. Also, the second metals each are positioned, in plan view of the side surface, such that at least a part thereof overlaps a gap between the first metals.

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