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    Power amplification module
    2.
    发明授权
    Power amplification module 有权
    功率放大模块

    公开(公告)号：US09559654B2

    公开(公告)日：2017-01-31

    申请号：US14520467

    申请日：2014-10-22

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hayato Nakamura ,  Mitsuo Ariie ,  Tadashi Matsuoka ,  Tsutomu Onaro

    IPC: H03G3/30 ,  H03F3/21 ,  H03F3/193 ,  H03F1/02 ,  H03F1/22 ,  H03F3/195 ,  H03G1/00

    CPC classification number: H03G3/3047 ,  H03F1/0261 ,  H03F1/22 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/144 ,  H03F2200/153 ,  H03F2200/18 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2203/21112 ,  H03F2203/45138 ,  H03F2203/45528 ,  H03G1/0029

    Abstract: Disclosed is a power amplification module which has a comparatively small size and is capable of adjusting the rising characteristic of a gain. The power amplification module includes a first gain control current generation circuit which generates a first gain control current changing with a control voltage, a first bias current generation circuit which generates a first bias current according to the first gain control current, a gain control voltage generation circuit which generates a gain control voltage changing with the control voltage, a first transistor which is emitter-grounded and in which an input signal and the first bias current are supplied to a base thereof, and a second transistor which is cascode-connected to the first transistor and in which the gain control voltage is supplied to a base thereof and a first output signal obtained by amplifying the input signal is output from a collector thereof.

    Abstract translation: 公开了一种功率放大模块，其具有相对较小的尺寸并且能够调节增益的上升特性。 功率放大模块包括：第一增益控制电流产生电路，其产生以控制电压变化的第一增益控制电流;第一偏置电流产生电路，其根据第一增益控制电流产生第一偏置电流;增益控制电压产生 电路，其产生随着控制电压而变化的增益控制电压;发射极接地的第一晶体管，其输入信号和第一偏置电流被提供给其基极;第二晶体管，其与 第一晶体管，并且其增益控制电压被提供给其基极，并且通过放大输入信号获得的第一输​​出信号从其集电极输出。

    High frequency module
    4.
    发明授权
    High frequency module 有权

    公开(公告)号：US10009059B2

    公开(公告)日：2018-06-26

    申请号：US15198214

    申请日：2016-06-30

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hayato Nakamura ,  Eigo Tange ,  Tadashi Matsuoka ,  Yasushi Shigeno

    IPC: H04B1/44 ,  H04W72/04 ,  H04B1/00 ,  H04W88/02

    CPC classification number: H04B1/44 ,  H04B1/006 ,  H04B1/0064 ,  H04B1/0067 ,  H04W72/0453 ,  H04W88/02

    Abstract: Provided is a high frequency module capable of reducing the IMD. During the transmission/reception operation based on W-CDMA, control signals VSWCC, VTRXCC are output as Hi signals from a control logic. Consequently, transistor T1 is turned ON, and transistors T2, T3 are respectively turned OFF. When the transistor T1 is turned ON, the voltage output from an operational amplifier is output as the signal VVSW to a control terminal, and the control signal VTRXC is output as a Hi signal. The signal VVSW is of a voltage level that is lower than that of the control signal VTRXC. The control signal VTRXC is a signal for turning ON a transistor circuit Q1, and the signal VVSW is a signal for supplying a DC voltage to the antenna potential. It is thereby possible to reduce the ON resistance of the transistor circuit Q1 and improve the IMD characteristics.

    Radio frequency module and communication device
    5.
    发明授权
    Radio frequency module and communication device 有权

    公开(公告)号：US12101110B2

    公开(公告)日：2024-09-24

    申请号：US18187994

    申请日：2023-03-22

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Motoji Tsuda ,  Hayato Nakamura

    IPC: H04B1/04 ,  H03F3/24

    CPC classification number: H04B1/04 ,  H03F3/245 ,  H03F2200/451 ,  H04B2001/0408

    Abstract: A radio frequency module includes a module substrate; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the first transmission signal; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the second transmission signal; a temperature sensor disposed on or over the module substrate; and a PA control circuit disposed on or over the module substrate and controls amplification operations of the power amplifiers according to a measurement value of the temperature sensor. The maximum output power of the power amplifier is greater than the maximum output power of the power amplifier, and the distance between the temperature sensor and the power amplifier is less than or equal to the distance between the temperature sensor and the power amplifier.

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