Active balun circuit, power amplifier circuit, and power amplifier module

    公开(公告)号:US11528012B2

    公开(公告)日:2022-12-13

    申请号:US17089766

    申请日:2020-11-05

    Abstract: An active balun circuit includes first and second transistors having emitters electrically coupled to each other and configured to output differential signals and a circuit element coupled between the connection point of the emitter of the first transistor and the emitter of the second transistor and a reference potential. The impedance of the circuit element at a particular frequency of the input signal appears significantly larger than impedances at other frequencies. An input signal from an input terminal is inputted to the base of the first transistor. The reference potential is applied to the base of the second transistor. A supply voltage is applied to the collector of the first transistor and the collector of the second transistor. A signal from the collector of the first transistor and a signal from the collector of the second transistor are outputted as the differential signals.

    High-frequency module
    12.
    发明授权

    公开(公告)号:US11496178B2

    公开(公告)日:2022-11-08

    申请号:US17015477

    申请日:2020-09-09

    Abstract: A high-frequency module includes a transmission signal amplifier that outputs a transmission signal to an antenna terminal side; a reception signal amplifier that amplifies a reception signal supplied from an antenna terminal; a switch that selectively connects the antenna terminal to either an output of the transmission signal amplifier or an input of the reception signal amplifier; and a directional coupler that is provided on a transmission signal path and detects a signal level of the transmission signal. The transmission signal amplifier is controlled by a first control signal supplied from a first control circuit. The reception signal amplifier is controlled by a second control signal supplied from a second control circuit. The switch is controlled by a switch control signal supplied from the first control circuit. The directional coupler is controlled by a coupler control signal supplied from the first control circuit.

    Power amplifier circuit
    13.
    发明授权

    公开(公告)号:US11258406B2

    公开(公告)日:2022-02-22

    申请号:US16458409

    申请日:2019-07-01

    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.

    Power amplifier circuit
    16.
    发明授权

    公开(公告)号:US11018639B2

    公开(公告)日:2021-05-25

    申请号:US16382324

    申请日:2019-04-12

    Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal; a second transistor that amplifies the second signal and outputs a third signal; a bias circuit that supplies a bias current to a base of the second transistor; and a bias adjustment circuit that adjusts the bias current to be supplied by the bias circuit by subjecting the first signal to detection. The bias adjustment circuit controls the bias current to be supplied to the base of the second transistor by drawing, from the bias circuit, a current of a magnitude corresponding to a magnitude of the first signal. The current increases as the magnitude of the first signal increases.

    Semiconductor device
    17.
    发明授权

    公开(公告)号:US10825785B2

    公开(公告)日:2020-11-03

    申请号:US16157469

    申请日:2018-10-11

    Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

    High-frequency module
    19.
    发明授权

    公开(公告)号:US10804955B2

    公开(公告)日:2020-10-13

    申请号:US16788625

    申请日:2020-02-12

    Abstract: A high-frequency module includes a transmission signal amplifier that outputs a transmission signal to an antenna terminal side; a reception signal amplifier that amplifies a reception signal supplied from an antenna terminal; a switch that selectively connects the antenna terminal to either an output of the transmission signal amplifier or an input of the reception signal amplifier; and a directional coupler that is provided on a transmission signal path and detects a signal level of the transmission signal. The transmission signal amplifier is controlled by a first control signal supplied from a first control circuit. The reception signal amplifier is controlled by a second control signal supplied from a second control circuit. The switch is controlled by a switch control signal supplied from the first control circuit. The directional coupler is controlled by a coupler control signal supplied from the first control circuit.

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