COMMUNICATION TERMINAL DEVICE AND COMMUNICATION SYSTEM

    公开(公告)号:US20210219147A1

    公开(公告)日:2021-07-15

    申请号:US17142430

    申请日:2021-01-06

    Abstract: A communication terminal device is a glasses-type communication terminal device having an optically transmissive display mounted thereon. The communication terminal device includes first and second radio-frequency modules that perform radio-frequency signal processing and a baseband module that is connected to the first and second radio-frequency modules via communication lines so as to be communicable and that performs baseband signal processing. The first and second radio-frequency modules are selectively switched by the baseband module to perform a reception operation. When the first radio-frequency module performs the reception operation, a reception signal received by the first radio-frequency module is retransmitted from the second radio-frequency module.

    Power amplification module
    12.
    发明授权

    公开(公告)号:US10985712B2

    公开(公告)日:2021-04-20

    申请号:US16351916

    申请日:2019-03-13

    Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

    Communication unit
    13.
    发明授权

    公开(公告)号:US10256848B2

    公开(公告)日:2019-04-09

    申请号:US15490021

    申请日:2017-04-18

    Abstract: A communication unit includes the following elements. A first transmit circuit outputs a first signal or a second signal from a first input signal. A first amplifier amplifies the first signal and outputs a first amplified signal. A first signal generating circuit generates a third signal having a frequency higher than a frequency of the second signal, based on the second signal and a first reference signal. A first filter circuit receives the third signal and allows one of a frequency component representing a sum of the frequency of the second signal and a frequency of the first reference signal and a frequency component representing a difference therebetween to pass through the first filter circuit and attenuates the other one of the frequency components. A second amplifier amplifies the third signal output from the first filter circuit and outputs a second amplified signal.

    Semiconductor device
    15.
    发明授权

    公开(公告)号:US11227862B2

    公开(公告)日:2022-01-18

    申请号:US16921379

    申请日:2020-07-06

    Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.

    Power amplifier module
    17.
    发明授权

    公开(公告)号:US11031910B2

    公开(公告)日:2021-06-08

    申请号:US16917817

    申请日:2020-06-30

    Abstract: A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.

    Bipolar transistor semiconductor device

    公开(公告)号:US10910484B2

    公开(公告)日:2021-02-02

    申请号:US16058123

    申请日:2018-08-08

    Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.

    Multi-antenna module and mobile terminal

    公开(公告)号:US10530052B2

    公开(公告)日:2020-01-07

    申请号:US16038464

    申请日:2018-07-18

    Abstract: A multi-antenna module includes, on or in the dielectric substrate, a first radiation element, a second radiation element that operates at a frequency band lower than that of the first radiation element, and a ground plane. A first feed line and a second feed line are provided on or in the dielectric substrate. A first switch element switches between a first state in which a signal is supplied to the second radiation element and a second state including at least one of a state in which the second radiation element is connected to the ground plane with terminal impedance interposed therebetween, a state in which the second radiation element is in a floating state with respect to the second feed line and the ground plane, and a state in which the second radiation element is short-circuited to the ground plane.

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