公开(公告)号：US20230369205A1

公开(公告)日：2023-11-16

申请号：US17663181

申请日：2022-05-12

Applicant: NXP USA, Inc.

Inventor： Humayun Kabir ,  Ibrahim Khalil ,  Daniel Joseph Lamey ,  Yu-Ting David Wu

IPC: H01L23/528 ,  H01L25/10 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/40 ,  H03K17/687

CPC classification number: H01L23/528 ,  H01L25/105 ,  H01L29/41725 ,  H01L27/088 ,  H01L21/823475 ,  H01L29/401 ,  H03K17/6871

Abstract: A device having a reference transistor fabricated within the same semiconductor substrate as a primary transistor (e.g., configured for use in a radiofrequency amplifier or other active circuit) has a shared metallization area coupled to a current terminal of both transistors configured to shield a control terminal of the reference transistor from coupling of alternating current interference from alternating currents within the primary transistor.

公开(公告)号：US20220399856A1

公开(公告)日：2022-12-15

申请号：US17344789

申请日：2021-06-10

Applicant: NXP USA, Inc.

Inventor： Nick Yang ,  Yu-Ting David Wu ,  Joseph Gerard Schultz

IPC: H03F1/02 ,  H03F3/21

Abstract: A Doherty amplifier includes a peaking amplifier, a carrier amplifier, and a combining node electrically connected to the carrier amplifier and the peaking amplifier. The Doherty amplifier includes a harmonic control circuit coupled to the combining node. The harmonic control circuit includes an inductor and a capacitor and the inductor and capacitor are connected in series between the first current conducting terminal and a ground reference node. An inductance value of the inductor of the harmonic control circuit and a capacitance value of the capacitor of the harmonic control circuit are selected to terminate second order harmonic components of a fundamental frequency of a signal generated by the carrier amplifier.

公开(公告)号：US20190173430A1

公开(公告)日：2019-06-06

申请号：US15830477

申请日：2017-12-04

Applicant: NXP USA, Inc.

Inventor： James Krehbiel ,  Nick Yang ,  Joseph Gerard Schultz ,  Enver Krvavac ,  Yu-Ting David Wu

IPC: H03F1/02 ,  H03F3/195 ,  H03F3/60

Abstract: Embodiments of a multiple-path amplifier (e.g., a Doherty amplifier) and a module housing the amplifier include a first amplifier (or first power transistor die) with a first output terminal, a second amplifier (or second power transistor die) with a second output terminal, and an impedance inverter line assembly electrically connected between the first and second output terminals. The impedance inverter line assembly includes a first transmission line and a surface mount component connected in series between the first and second output terminals. In various embodiments, the surface mount component is selected from a fixed-value capacitor, a fixed-value inductor, a tunable capacitor, a tunable inductor, and a tunable passive component network.

公开(公告)号：US20230232528A1

公开(公告)日：2023-07-20

申请号：US18156972

申请日：2023-01-19

Applicant: NXP USA, Inc.

Inventor： Yu-Ting David Wu ,  Pascal Peyrot ,  Xavier Hue

IPC: H05K1/02 ,  H03F3/195 ,  H03F3/213 ,  H01L23/66

CPC classification number: H05K1/0236 ,  H03F3/195 ,  H03F3/213 ,  H01L23/66 ,  H05K1/0209 ,  H05K1/0206 ,  H01L2223/6655 ,  H01L2223/6611 ,  H01L2223/6622 ,  H01L2223/6672 ,  H03F1/0288

Abstract: Power amplifier systems including power amplifier modules (PAMs) and electromagnetic bandgap (EBG) isolation structures are disclosed. In embodiments, the power amplifier system includes a printed circuit board (PCB) and a PAM mounted to the PCB in an inverted orientation. The PCB has a PCB frontside on which a PAM mount region is provided, and radio frequency (RF) input and output bondpads. The PAM includes a topside input/output interface having RF input and output terminals electrically coupled to the RF input and output pads, respectively. The power amplifier system further includes a first EBG isolation structure containing a first grounded EBG cell array, at least a portion of which is located within or beneath the PAM mount region.

公开(公告)号：US11695375B2

公开(公告)日：2023-07-04

申请号：US17110568

申请日：2020-12-03

Applicant: NXP USA, Inc.

Inventor： Joseph Gerard Schultz ,  Yu-Ting David Wu ,  Nick Yang

IPC: H03F3/21 ,  H03F3/195 ,  H01L23/60 ,  H01L23/66 ,  H01L23/00 ,  H03F1/02 ,  H03F1/56 ,  H03F3/24

CPC classification number: H03F3/195 ,  H01L23/60 ,  H01L23/66 ,  H01L24/49 ,  H03F1/0288 ,  H03F1/565 ,  H03F3/245 ,  H01L2223/6655 ,  H03F2200/318 ,  H03F2200/451

Abstract: An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

公开(公告)号：US20210194443A1

公开(公告)日：2021-06-24

申请号：US16718679

申请日：2019-12-18

Applicant: NXP USA, Inc.

Inventor： Elie A. Maalouf ,  Yu-Ting David Wu ,  Lu Wang ,  Nick Yang

IPC: H03F3/213 ,  H03F1/56 ,  H03F1/02 ,  H03F3/195 ,  H01L23/66 ,  H04B1/04

Abstract: An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.

公开(公告)号：US10594266B2

公开(公告)日：2020-03-17

申请号：US15830477

申请日：2017-12-04

Applicant: NXP USA, Inc.

Inventor： James Krehbiel ,  Nick Yang ,  Joseph Gerard Schultz ,  Enver Krvavac ,  Yu-Ting David Wu

IPC: H03F1/07 ,  H03F1/02 ,  H03F3/195 ,  H03F3/60

Abstract: Embodiments of a multiple-path amplifier (e.g., a Doherty amplifier) and a module housing the amplifier include a first amplifier (or first power transistor die) with a first output terminal, a second amplifier (or second power transistor die) with a second output terminal, and an impedance inverter line assembly electrically connected between the first and second output terminals. The impedance inverter line assembly includes a first transmission line and a surface mount component connected in series between the first and second output terminals. In various embodiments, the surface mount component is selected from a fixed-value capacitor, a fixed-value inductor, a tunable capacitor, a tunable inductor, and a tunable passive component network.

公开(公告)号：US10566938B1

公开(公告)日：2020-02-18

申请号：US16215877

申请日：2018-12-11

Applicant: NXP USA, Inc.

Inventor： Joseph Gerard Schultz ,  Yu-Ting David Wu ,  Nick Yang

IPC: H04B1/48 ,  H03F3/195 ,  H01L27/092 ,  H01L27/06 ,  H03F3/193

Abstract: Systems for providing isolation of a bias signal relative to a radio frequency (RF) signal in an integrated circuit, and related circuits, modules, and methods, are disclosed herein. In one example embodiment, a system includes an inductor, a bypass capacitor, and a transmission line segment, which includes first and second ends and extends between the first and second ends. The first end is at least indirectly coupled to the bypass capacitor, the second end is at least indirectly coupled to a first additional end of the inductor, and a second additional end of the inductor is configured to be coupled at least indirectly to a device through which the RF signal is being communicated. The transmission line segment is configured to impart a non-negligible phase shift to a signal communicated between the first and second ends, or is configured to have a non-negligible effective inductance.

公开(公告)号：US10381984B2

公开(公告)日：2019-08-13

申请号：US15846162

申请日：2017-12-18

Applicant: NXP USA, Inc.

Inventor： Yu-Ting David Wu ,  Enver Krvavac ,  Joseph Gerard Schultz ,  Nick Yang ,  Damon G. Holmes ,  Shishir Ramasare Shukla ,  Jeffrey Kevin Jones ,  Elie A. Maalouf ,  Mario Bokatius

IPC: H03F3/68 ,  H03F1/02 ,  H01L27/06 ,  H01L23/66 ,  H03F3/195 ,  H03F1/56 ,  H03F3/213 ,  H01L27/085

Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.