公开(公告)号：US10008181B2

公开(公告)日：2018-06-26

申请号：US15452886

申请日：2017-03-08

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G5/10 ,  H01L27/32

CPC分类号： G09G5/10 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/0646 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78693

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

公开(公告)号：US09972274B2

公开(公告)日：2018-05-15

申请号：US15032192

申请日：2014-10-23

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： H01L27/12 ,  G09G3/36 ,  H01L29/786 ,  H01L27/32

CPC分类号： G09G3/3696 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0278 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/7869

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US09761673B2

公开(公告)日：2017-09-12

申请号：US14007705

申请日：2012-03-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： C01G3/02 ,  C01F11/02 ,  H01L29/24 ,  H01L29/786 ,  C01F5/06 ,  C01F11/04 ,  G09G3/32 ,  H01L29/04 ,  H01L27/32

CPC分类号： H01L29/242 ,  C01F5/06 ,  C01F11/04 ,  C01G3/02 ,  C01P2002/02 ,  G09G3/32 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78693

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x

公开(公告)号：US09527285B2

公开(公告)日：2016-12-27

申请号：US15081307

申请日：2016-03-25

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/06 ,  B41J2002/14491

摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

摘要翻译： 一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

公开(公告)号：US20160013215A1

公开(公告)日：2016-01-14

申请号：US14795234

申请日：2015-07-09

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G3/22 ,  C09D5/24 ,  H01L29/786 ,  H01L29/24

CPC分类号： H01L27/1225 ,  C09D5/24 ,  G09G3/22 ,  G09G2300/0421 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.

摘要翻译： 一种场效应晶体管，包括：施加栅极电压的栅电极; 源电极和漏电极，被配置为取出电流; 由n型氧化物半导体形成的有源层，与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体包括选自由Re，Ru和Os组成的组中的至少一种作为掺杂剂。

公开(公告)号：US20120248451A1

公开(公告)日：2012-10-04

申请号：US13515463

申请日：2010-12-22

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

摘要翻译： 场效应晶体管包括衬底; 形成在基板上的源电极，漏电极和栅电极; 半导体层，当预定的电压施加到栅电极时，通过该半导体层形成在源电极和漏电极之间的沟道; 以及设置在栅极电极和半导体层之间的栅极绝缘层。 栅极绝缘层由包含一种或两种以上碱土金属元素的非晶态复合金属氧化物绝缘膜和除了Ce之外的选自Ga，Sc，Y和镧系元素中的一种或两种以上的元素形成。

公开(公告)号：US08268666B2

公开(公告)日：2012-09-18

申请号：US12831454

申请日：2010-07-07

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。

公开(公告)号：US11069780B2

公开(公告)日：2021-07-20

申请号：US16353872

申请日：2019-03-14

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L21/28 ,  H01L29/786

摘要： A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

公开(公告)号：US11049951B2

公开(公告)日：2021-06-29

申请号：US16425446

申请日：2019-05-29

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

IPC分类号： H01L29/51 ,  H01L21/02 ,  C09D1/00 ,  C09D5/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/318

摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

公开(公告)号：US11018262B2

公开(公告)日：2021-05-25

申请号：US16318597

申请日：2017-07-14

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.