摘要:
A novel test procedure is used to determine the optimum programmable charge pump levels for a flash memory array in a CPLD. According to the method of the invention, an automated tester steps through all combinations of charge pump codes and attempts to program the flash memory with each combination of voltage levels. For each combination, the results of the test (pass or fail) are logged and stored into a map or array. The center of a window of passing pump codes is taken as the starting reference point. The next step is to verify the actual voltage level associated with the pump code combination corresponding to the starting reference point. The reference pump code is loaded into the device and the corresponding flash memory cell voltage levels are measured. If the measured voltage level does not fall into the preferred range, the tester automatically adjusts the level towards the preferred range by adjusting the pump codes.
摘要:
A programmable logic device, such as a field programmable gate array, is partially reconfigured using a read-modify-write scheme that is controlled by a processor. The partial reconfiguration includes (1) loading a base set of configuration data values into a configuration memory array of the programmable logic device, thereby configuring the programmable logic device; (2) reading a first frame of configuration data values from the configuration memory array; (3) modifying a subset of the configuration data values in the first frame of configuration data values, thereby creating a first modified frame of configuration data values; and (4) overwriting the first frame of configuration data values in the configuration memory array with the first modified frame of configuration data values, thereby partially reconfiguring the programmable logic device. The steps of reading, modifying and overwriting are performed under the control of a processor.
摘要:
A negative voltage detector is disclosed wherein a resistor divider circuit is used to translate a negative voltage into a standard CMOS logic low or logic high value. The small area consumed by the negative voltage divider of the present invention allows multiple device placement within a logic device without the consumption of much area on the logic device. Additionally, the multiple devices placed may detect different negative voltage thresholds with a simple tuning of device components.
摘要:
A method of minimizing power use in programmable logic devices (PLD) using programmable connections and scrap logic to create a versatile power management scheme. Individual product terms in a PLD can be powered off, thereby saving power, without incurring the power-up and settling time delays seen in the prior art. Power management is not restricted to any one function block, nor must the entire device be powered down, unless so programmed. All conventional logic functionality present in the PLD is available to the power management elements, allowing, in one embodiment, a standard function block to be programmed to operate as the control function block. This logic functionality includes, but is not limited to, internal feedback, combinatorial functions, and register functions. Because scrap logic resources left over from user programming and small programmable connections are used, minimal additional chip surface area is needed. No specific input/output pins are required; in fact, no external connections are required at all, though one or more may be used as inputs to the control function block logic. In some embodiments, power management can be accomplished using internal, on-chip signals alone. The pin-locking capabilities (compatibility) of conventional PLD designs are not affected and all function blocks remain identical, preserving maximum design flexibility for users.
摘要:
An input/output (I/O) circuit for transmitting output signals on or receiving input signals from an I/O terminal of an integrated circuit device, such as a Programmable Logic Device (PLD). The I/O circuit includes pull-up and pull-down transistors for generating output signals on the I/O terminal in an output mode, and an isolation transistor for limiting the voltage level transmitted to the pull-up transistor from the I/O terminal in an input mode. The isolation transistor is formed with a thicker gate oxide and a longer channel length than that of the pull-up and pull-down transistors, thereby allowing the isolation transistor to withstand voltages greater than Vcc of the PLD without damage. The isolation transistor is controlled using a charge pump provided on the PLD for programming non-volatile memory cells (e.g., EPROM, EEPROM or flash EPROM cells). The isolation transistor is produced during the same process steps used to produce high voltage transistors associated with the non-volatile memory cells.
摘要:
A method of partially reconfiguring an IC having programmable modules that includes the steps of reading a frame of configuration information from the configuration memory array; modifying at least part of the configuration information, thereby creating a modified frame of configuration information; and overwriting the existing frame of configuration information in the configuration memory array with the modified frame, thereby partially reconfiguring the IC.
摘要:
A negative voltage detector including a resistor divider circuit is used to translate a negative voltage into a standard CMOS logic low or logic high value. The small area consumed by the negative voltage divider allows multiple device placement within a logic device without the consumption of much area on the logic device. Additionally, the multiple devices placed may detect different negative voltage thresholds with a simple tuning of device components.
摘要:
A method of partially reconfiguring an IC having programmable modules that includes the steps of reading a frame of configuration information from the configuration memory array; modifying at least part of the configuration information, thereby creating a modified frame of configuration information; and overwriting the existing frame of configuration information in the configuration memory array with the modified frame, thereby partially reconfiguring the IC.
摘要:
A Boundary-Scan register (BSR) cell including a bypass circuit for selectively routing data signals around the data shift register of the BSR cell so that the BSR cell can be effectively removed from a BSR chain during Boundary-Scan Test procedures involving IEEE Standard 1149.1 compliant integrated circuits. In one embodiment, the BSR cell includes a bypass MUX having a first input terminal connected to a test data input (TDI) terminal of the BSR cell, a second input terminal connected to an output terminal of the shift register, and an output terminal connected to the test data output (TDO) terminal. The BSR cell operates in a “normal” mode (i.e., included in the BSR chain) when the bypass MUX is controlled to pass data signals output from the shift register to the TDO terminal. In contrast, the BSR cell is selectively bypassed (i.e., removed from the BSR chain) when the bypass MUX is controlled to pass the TDI signal to the TDO terminal. The BSR cell also includes mode control MUX having a first input terminal connected to receive a MODE signal generated by a Boundary-Scan TAP controller, a second input terminal connected to an OFF (disable) signal source, and an output terminal connected to the output MUX of the BSR cell. When the BSR cell operates in the “normal”, the mode control MUX is controlled to pass the MODE signal to the output MUX. In contrast, when the BSR cell is selectively bypassed, the OFF signal is passed to the output MUX.
摘要:
A multiplexor having a multiplexor control input terminal for selectively providing one of a plurality of conductor voltage levels to a conductor. The multiplexor includes a first switch, which is coupled to the conductor, for providing a first conductor voltage level to the conductor. A second switch is also included and coupled to the conductor for providing a second conductor voltage level to the conductor. To provide a selective discharge path for the conductor during switching, the multiplexor further includes a third switch coupled to the conductor. A discharge circuit is also provided and coupled to the conductor and the third switch for sensing the voltage level of the conductor to turn on the third switch as necessary at the early stage of switching among conductor voltage levels.