公开(公告)号：US08962460B2

公开(公告)日：2015-02-24

申请号：US13094024

申请日：2011-04-26

申请人： Jerome A. Imonigie ,  Prashant Raghu ,  Theodore M. Taylor ,  Scott E. Sills

发明人： Jerome A. Imonigie ,  Prashant Raghu ,  Theodore M. Taylor ,  Scott E. Sills

IPC分类号： H01L21/22 ,  H01L21/38 ,  H01L45/00

CPC分类号： H01L45/1658 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1641

摘要： Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.

摘要翻译： 选择性地形成金属掺杂的硫族化物材料的方法包括将硫族化物材料暴露于过渡金属溶液，并将过渡溶液的过渡金属掺入硫族化物材料中，而基本上不将过渡金属掺入相邻的材料中。 硫族化物材料不是硒化银。 另一种方法包括形成与绝缘材料相邻并与其接触的硫族化物材料，将硫属化物材料和绝缘材料暴露于过渡金属溶液，并将过渡金属溶液的过渡金属扩散到硫属化物材料中，同时基本上没有过渡金属扩散 进入绝缘材料。 还公开了一种使用至少一种过渡金属掺杂存储单元的硫族化物材料而不使用蚀刻或化学机械平坦化工艺以从存储器单元的绝缘材料除去过渡金属的方法，其中硫族化物材料不是银 硒化物

公开(公告)号：US20140087551A1

公开(公告)日：2014-03-27

申请号：US13624272

申请日：2012-09-21

申请人： Jerome A. IMONIGIE ,  Prashant Raghu

发明人： Jerome A. IMONIGIE ,  Prashant Raghu

IPC分类号： C09K13/08 ,  H01L21/336

CPC分类号： C09K13/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/28273 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134 ,  H01L27/11556

摘要： Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.

摘要翻译： 用于蚀刻多晶硅的方法和组合物，包括含有硝酸和氟化铵的含水组合物，以及由此形成的装置。

公开(公告)号：US20130334594A1

公开(公告)日：2013-12-19

申请号：US13524803

申请日：2012-06-15

申请人： Jerome A. Imonigie ,  Patrick M. Flynn ,  Sandra L. Tagg ,  Prashant Raghu

发明人： Jerome A. Imonigie ,  Patrick M. Flynn ,  Sandra L. Tagg ,  Prashant Raghu

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L21/306

CPC分类号： H01L21/32135 ,  H01L21/32134 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Some embodiments include a memory device and a method of forming the memory device. One such memory device includes a string of stacked memory cells. Each of the memory cells in the string includes a charge storage structure and a recessed control gate. The recessed control gate has a substantially smooth surface separated from the charge storage structure by dielectric material. One such method includes etching heavily boron doped polysilicon selective to oxide to form a recessed control gate having a surface with nubs. A smoothing solution is applied to the surface of the recessed control gate to smoothen the nubs. Additional apparatuses and methods are described.

摘要翻译： 一些实施例包括存储器件和形成存储器件的方法。 一个这样的存储器件包括一堆堆叠的存储器单元。 串中的每个存储单元包括电荷存储结构和凹入控制门。 凹陷的控制栅极具有通过介电材料与电荷存储结构分离的基本平滑的表面。 一种这样的方法包括蚀刻对氧化物选择性的重硼掺杂多晶硅以形成具有带有凸块的表面的凹陷控制栅极。 将平滑解决方案应用于凹入控制门的表面以平滑微调。 描述附加的装置和方法。

公开(公告)号：US08273261B2

公开(公告)日：2012-09-25

申请号：US12750457

申请日：2010-03-30

申请人： Prashant Raghu

发明人： Prashant Raghu

IPC分类号： C03C15/00

CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

公开(公告)号：US07629266B2

公开(公告)日：2009-12-08

申请号：US11680916

申请日：2007-03-01

申请人： Janos Fucsko ,  Grady S. Waldo ,  Joseph Wiggins ,  Prashant Raghu

发明人： Janos Fucsko ,  Grady S. Waldo ,  Joseph Wiggins ,  Prashant Raghu

IPC分类号： H01L21/302

CPC分类号： C03C15/00 ,  C09K13/08

摘要： The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.

摘要翻译： 本发明包括含有异丙醇和一种或多种HF，NH 4 F和四甲基氟化铵（TMAF）的蚀刻剂组合物。 本发明包括一种处理衬底的方法。 提供了具有包含多晶硅，单晶硅和非晶硅中的至少一种的第一材料和第二材料的衬底。 将衬底暴露于包含异丙醇和HF，NH4F和TMAF中的至少一种的蚀刻组合物。 本发明包括一种处理半导体结构的方法，包括提供沿电容器电极材料的至少一部分具有电容器电极材料和氧化物材料的结构。 使用包含异丙醇的蚀刻剂组合物通过各向同性蚀刻除去至少一些氧化物材料。

公开(公告)号：US20070166920A1

公开(公告)日：2007-07-19

申请号：US11716433

申请日：2007-03-08

申请人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

发明人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

摘要翻译： 晶体管栅极形成方法包括在线路开口内形成金属层，并在金属层的开口内形成填充层。 填充层相对于金属层基本上可选择性地蚀刻。 晶体管结构包括线路开口，开口内的电介质层，开口内的电介质层上的金属层，以及开口内的金属层上的填充层。 如果填充层被金属层的增加的厚度代替，则金属层/填充层组合的内在特性小于否则会存在。 本发明至少应用于三维晶体管结构。

公开(公告)号：US20070048976A1

公开(公告)日：2007-03-01

申请号：US11218229

申请日：2005-08-31

申请人： Prashant Raghu

发明人： Prashant Raghu

IPC分类号： H01L21/20 ,  H01L21/302

CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

公开(公告)号：US20070048941A1

公开(公告)日：2007-03-01

申请号：US11219077

申请日：2005-09-01

申请人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

发明人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

公开(公告)号：US08618000B2

公开(公告)日：2013-12-31

申请号：US13585072

申请日：2012-08-14

申请人： Prashant Raghu ,  Yi Yang

发明人： Prashant Raghu ,  Yi Yang

IPC分类号： H01L21/302

CPC分类号： H01L23/564 ,  C09K13/04 ,  H01L21/31111 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.

摘要翻译： 提供了用于湿蚀刻以相对于氧化硅（SiO x）选择性去除铪氧化铝（HfAlO x）材料的方法和蚀刻剂组合物。

公开(公告)号：US08492288B2

公开(公告)日：2013-07-23

申请号：US12136661

申请日：2008-06-10

申请人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

发明人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00

CPC分类号： H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.