利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.032 秒)

    Low resistance peripheral local interconnect contacts with selective wet strip of titanium
    5.
    发明授权
    Low resistance peripheral local interconnect contacts with selective wet strip of titanium 有权
    低电阻外围局部互连接触与选择性湿条钛

    公开(公告)号：US07605033B2

    公开(公告)日：2009-10-20

    申请号：US10932327

    申请日：2004-09-01

    申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

    发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

    IPC分类号： H01L21/8242

    CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided. In some embodiments, the method includes forming a metallized contact to an active area in a silicon substrate in a peripheral circuitry area and a metallized contact to a polysilicon plug in a memory cell array area by forming a first opening to expose the active area at the peripheral circuitry area, chemical vapor depositing a titanium layer over the dielectric layer and into the first opening to form a titanium silicide layer over the active area in the silicon substrate, removing the titanium layer selective to the titanium silicide layer, forming a second opening in the dielectric layer to expose the polysilicon plug at the memory cell array area, and forming metal contacts within the first and second openings to the active area and the exposed polysilicon plug.

    摘要翻译： 提供了用于形成存储器件和集成电路的方法，例如由这些方法产生的DRAM电路，结构和器件，以及结合该器件的系统。 在一些实施例中，该方法包括在外围电路区域中的硅衬底中的有源区域上形成金属化接触，以及通过形成第一开口以在存储单元阵列区域中暴露有源区域的金属化接触到多晶硅插塞 外围电路区域，在电介质层上化学气相沉积钛层并进入第一开口以在硅衬底的有源区域上形成钛硅化物层，去除对硅化钛层有选择性的钛层，形成第二开口 所述电介质层在所述存储单元阵列区域处露出所述多晶硅插塞，以及在所述第一和第二开口内形成到所述有源区域和暴露的多晶硅插塞的金属触点。

    Photoresist Processing Methods
    7.
    发明申请
    Photoresist Processing Methods 有权
    光刻胶加工方法

    公开(公告)号：US20110159698A2

    公开(公告)日：2011-06-30

    申请号：US11510010

    申请日：2006-08-24

    申请人： Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

    发明人： Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

    IPC分类号： H01L21/302

    CPC分类号： H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

    摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

    摘要翻译： 光致抗蚀剂处理方法包括用含硫物质处理基材。 将正色调光致抗蚀剂施加在经处理的基底上并与其接触。 该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。 与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

    Photoresist processing methods
    8.
    发明授权
    Photoresist processing methods 有权
    光刻胶加工方法

    公开(公告)号：US08685625B2

    公开(公告)日：2014-04-01

    申请号：US13622574

    申请日：2012-09-19

    申请人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

    发明人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

    IPC分类号： G03F7/26

    CPC分类号： H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

    摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

    摘要翻译： 光致抗蚀剂处理方法包括用含硫物质处理基材。 将正色调光致抗蚀剂施加在经处理的基底上并与其接触。 该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。 与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。