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    Transistor gate forming methods and transistor structures
    1.
    发明申请
    Transistor gate forming methods and transistor structures 有权
    晶体管栅极形成方法和晶体管结构

    公开(公告)号：US20070166920A1

    公开(公告)日：2007-07-19

    申请号：US11716433

    申请日：2007-03-08

    申请人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

    发明人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

    摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

    摘要翻译： 晶体管栅极形成方法包括在线路开口内形成金属层，并在金属层的开口内形成填充层。 填充层相对于金属层基本上可选择性地蚀刻。 晶体管结构包括线路开口，开口内的电介质层，开口内的电介质层上的金属层，以及开口内的金属层上的填充层。 如果填充层被金属层的增加的厚度代替，则金属层/填充层组合的内在特性小于否则会存在。 本发明至少应用于三维晶体管结构。

    Transistor gate forming methods and transistor structures
    2.
    发明申请
    Transistor gate forming methods and transistor structures 有权

    公开(公告)号：US20070048941A1

    公开(公告)日：2007-03-01

    申请号：US11219077

    申请日：2005-09-01

    申请人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

    发明人： Sanh Tang ,  Gordon Haller ,  Prashant Raghu ,  Ravi Iyer

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

    摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

    Integrated Circuits and Methods of Forming a Field Effect Transistor
    3.
    发明申请
    Integrated Circuits and Methods of Forming a Field Effect Transistor 有权
    集成电路和形成场效应晶体管的方法

    公开(公告)号：US20080099847A1

    公开(公告)日：2008-05-01

    申请号：US11957013

    申请日：2007-12-14

    申请人： Sanh Tang ,  Gordon Haller

    发明人： Sanh Tang ,  Gordon Haller

    IPC分类号： H01L29/786

    CPC分类号： H01L29/0653 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203

    摘要： Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semiconductive material. Semiconductor material is formed on the insulative material. A field effect transistor is included and comprises a gate, a channel region, and a pair of source/drain regions. In one implementation, one of the source/drain regions is formed in the semiconductor material, and the other of the source/drain regions is formed in the bulk semiconductive material. In one implementation, the electrically insulative material extends from beneath one of the source/drain regions to beneath only a portion of the channel region. Other aspects and implementations, including methodical aspects, are disclosed.

    摘要翻译： 公开了形成场效应晶体管的集成电路和方法。 在一个方面，集成电路包括包括本体半导体材料的半导体衬底。 电绝缘材料容纳在本体半导体材料内。 在绝缘材料上形成半导体材料。 包括场效应晶体管，并包括栅极，沟道区和一对源极/漏极区。 在一个实施方案中，源/漏区中的一个形成在半导体材料中，并且源/漏区中的另一个在体半导体材料中形成。 在一个实施方案中，电绝缘材料从源极/漏极区域之一延伸到仅沟道区域的仅一部分的下方。 公开了其他方面和实施方式，包括方法方面。

    Semiconductor memory device
    4.
    发明申请
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US20070051997A1

    公开(公告)日：2007-03-08

    申请号：US11218184

    申请日：2005-08-31

    申请人： Gordon Haller ,  Sanh Tang ,  Steve Cummings

    发明人： Gordon Haller ,  Sanh Tang ,  Steve Cummings

    IPC分类号： H01L29/94 ,  H01L21/8242

    CPC分类号： H01L21/823487 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888

    摘要： A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

    摘要翻译： 包括垂直晶体管的存储器件包括直接耦合到每个存储器单元的源极区域的数字线。 由于不使用电插头来形成数字线和源极区之间的接触，所以可以减少多个制造步骤，并且还可以减少制造缺陷的可能性。 在一些实施例中，存储器件可以包括垂直晶体管，其具有从硅衬底的上部凹陷的栅极区域。 随着从硅衬底凹入的栅极区域，栅极区域与源极/漏极区域进一步间隔开，因此，可以减小栅极区域和源极/漏极区域之间的交叉电容。

    Memory cell layout and process flow
    5.
    发明申请
    Memory cell layout and process flow 有权
    存储单元格布局和流程

    公开(公告)号：US20070045712A1

    公开(公告)日：2007-03-01

    申请号：US11219349

    申请日：2005-09-01

    申请人： Gordon Haller ,  David Hwang ,  Sanh Tang ,  Ceredig Roberts

    发明人： Gordon Haller ,  David Hwang ,  Sanh Tang ,  Ceredig Roberts

    IPC分类号： H01L29/788

    CPC分类号： H01L21/3088 ,  H01L21/0338 ,  H01L27/0207 ,  H01L27/10891 ,  H01L27/10894

    摘要： A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one word line located between each drain and the source. Digit lines are defined by a second pitch, one of the digit lines being coupled to the source and forming a second axis. The active areas of the memory array are tilted at 45° to the grid defined by the word lines and digit lines. The word line pitch is about 1.5 F, while the digit line pitch is about 3 F.

    摘要翻译： 存储器件包括有源区域，其包括源极和限定第一轴线的至少两个漏极。 至少两个基本上平行的字线由第一间距限定，一个字线位于每个漏极和源之间。 数字线由第二间距限定，其中一个数字线耦合到源并形成第二轴。 存储器阵列的有效区域与由字线和数字线限定的栅格倾斜45°。 字线间距约为1.5 F，而数字线间距约为3 F。

    Methods of forming semiconductor constructions
    6.
    发明申请
    Methods of forming semiconductor constructions 有权
    形成半导体结构的方法

    公开(公告)号：US20060046424A1

    公开(公告)日：2006-03-02

    申请号：US10925789

    申请日：2004-08-24

    申请人： Randal Chance ,  Gordon Haller ,  Sanh Tang ,  Steven Cummings

    发明人： Randal Chance ,  Gordon Haller ,  Sanh Tang ,  Steven Cummings

    IPC分类号： H01L21/76

    CPC分类号： H01L29/66666 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10808 ,  H01L27/10876 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/7827

    摘要： The invention includes semiconductor constructions containing vertically-extending pillars, and methods for forming such constructions. The vertically-extending pillars can be incorporated into transistor devices, and can contain vertically-extending channel regions of the transistor devices. The transistor devices can be incorporated into integrated circuitry, and in some aspects are incorporated into memory constructions, such as, for example, dynamic random access memory (DRAM) constructions.

    摘要翻译： 本发明包括包含垂直延伸柱的半导体结构以及用于形成这种结构的方法。 垂直延伸的柱可以并入晶体管器件中，并且可以包含晶体管器件的垂直延伸的沟道区域。 晶体管器件可以并入到集成电路中，并且在一些方面被并入存储器结构中，例如动态随机存取存储器（DRAM）结构。

    Integrated circuits and methods of forming a field effect transistor
    8.
    发明申请
    Integrated circuits and methods of forming a field effect transistor 有权

    公开(公告)号：US20070141771A1

    公开(公告)日：2007-06-21

    申请号：US11704487

    申请日：2007-02-09

    申请人： Sanh Tang ,  Gordon Haller

    发明人： Sanh Tang ,  Gordon Haller

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0653 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203

    摘要： Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semiconductive material. Semiconductor material is formed on the insulative material. A field effect transistor is included and comprises a gate, a channel region, and a pair of source/drain regions. In one implementation, one of the source/drain regions is formed in the semiconductor material, and the other of the source/drain regions is formed in the bulk semiconductive material. In one implementation, the electrically insulative material extends from beneath one of the source/drain regions to beneath only a portion of the channel region. Other aspects and implementations, including methodical aspects, are disclosed.

    Integrated circuits and methods of forming a field effect transistor
    10.
    发明申请
    Integrated circuits and methods of forming a field effect transistor 有权
    集成电路和形成场效应晶体管的方法

    公开(公告)号：US20060205128A1

    公开(公告)日：2006-09-14

    申请号：US11076774

    申请日：2005-03-10

    申请人： Sanh Tang ,  Gordon Haller

    发明人： Sanh Tang ,  Gordon Haller

    IPC分类号： H01L21/8234 ,  H01L21/76 ,  H01L21/20

    CPC分类号： H01L29/0653 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203

    摘要： Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semiconductive material. Semiconductor material is formed on the insulative material. A field effect transistor is included and comprises a gate, a channel region, and a pair of source/drain regions. In one implementation, one of the source/drain regions is formed in the semiconductor material, and the other of the source/drain regions is formed in the bulk semiconductive material. In one implementation, the electrically insulative material extends from beneath one of the source/drain regions to beneath only a portion of the channel region. Other aspects and implementations, including methodical aspects, are disclosed.

    摘要翻译： 公开了形成场效应晶体管的集成电路和方法。 在一个方面，集成电路包括包括本体半导体材料的半导体衬底。 电绝缘材料容纳在本体半导体材料内。 在绝缘材料上形成半导体材料。 包括场效应晶体管，并包括栅极，沟道区和一对源极/漏极区。 在一个实施方案中，源/漏区中的一个形成在半导体材料中，并且源/漏区中的另一个在体半导体材料中形成。 在一个实施方案中，电绝缘材料从源极/漏极区域之一延伸到仅沟道区域的仅一部分的下方。 公开了其他方面和实施方式，包括方法方面。