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    Light control for improved near infrared sensitivity and channel separation
    13.
    发明授权
    Light control for improved near infrared sensitivity and channel separation 有权

    公开(公告)号：US10964744B1

    公开(公告)日：2021-03-30

    申请号：US16570920

    申请日：2019-09-13

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Cunyu Yang ,  Ping-Hsu Chen ,  Zhiqiang Lin ,  Chengming Liu

    IPC: G01J5/20 ,  H01L27/14 ,  H01L27/146

    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.

    CELL DEEP TRENCH ISOLATION STRUCTURE FOR NEAR INFRARED IMPROVEMENT
    16.
    发明申请
    CELL DEEP TRENCH ISOLATION STRUCTURE FOR NEAR INFRARED IMPROVEMENT 有权

    公开(公告)号：US20220020790A1

    公开(公告)日：2022-01-20

    申请号：US16931229

    申请日：2020-07-16

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Cunyu Yang ,  Gang Chen

    IPC: H01L27/146 ,  H04N5/33

    Abstract: A pixel cell includes a photodiode disposed in a pixel cell region and proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside to the photodiode. A cell deep trench isolation (CDTI) structure is disposed in the pixel cell region along an optical path of the incident light to the photodiode and proximate to the backside. The CDTI structure includes a central portion extending a first depth from the backside towards the front side. Planar outer portions extend laterally outward from the central portion. The planar output portions further extend a second depth from the backside towards the front side. The first depth is greater than the second depth. Planes formed by each of the planar outer portions intersect in a line coincident with a longitudinal center line of the central portion of the CDTI structure.

    Image sensor having a source follower transistor with a multi-thickness gate dielectric
    17.
    发明授权
    Image sensor having a source follower transistor with a multi-thickness gate dielectric 有权

    公开(公告)号：US10964738B2

    公开(公告)日：2021-03-30

    申请号：US16149544

    申请日：2018-10-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant ,  Eric Webster ,  Sing-Chung Hu

    IPC: H01L27/146 ,  H04N5/378 ,  H04N9/04

    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.

    LIGHT CONTROL FOR IMPROVED NEAR INFRARED SENSITIVITY AND CHANNEL SEPARATION
    18.
    发明申请
    LIGHT CONTROL FOR IMPROVED NEAR INFRARED SENSITIVITY AND CHANNEL SEPARATION 有权

    公开(公告)号：US20210082990A1

    公开(公告)日：2021-03-18

    申请号：US16570920

    申请日：2019-09-13

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Cunyu Yang ,  Ping-Hsu Chen ,  Zhiqiang Lin ,  Chengming Liu

    IPC: H01L27/146

    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.

    CMOS IMAGE SENSOR HAVING ENHANCED NEAR INFRARED QUANTUM EFFICIENCY AND MODULATION TRANSFER FUNCTION
    19.
    发明申请
    CMOS IMAGE SENSOR HAVING ENHANCED NEAR INFRARED QUANTUM EFFICIENCY AND MODULATION TRANSFER FUNCTION 审中-公开

    公开(公告)号：US20190019832A1

    公开(公告)日：2019-01-17

    申请号：US15666086

    申请日：2017-08-01

    Applicant: OmniVision Technologies, Inc.

    Inventor： Cheng Zhao ,  Cunyu Yang ,  Chen-Wei Lu ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H04N5/33 ,  H01L27/148

    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

    Backside illuminated image sensor with improved contact area
    20.
    发明授权
    Backside illuminated image sensor with improved contact area 有权

    公开(公告)号：US10147754B2

    公开(公告)日：2018-12-04

    申请号：US15439793

    申请日：2017-02-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

    IPC: H01L27/00 ,  H01L27/146

    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

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