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公开(公告)号：US20180048122A1
公开(公告)日：2018-02-15
申请号：US15550888
申请日：2016-02-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christoph Stephan , Robert Walter , Stefan Hartauer , Christian Rumbolz
CPC classification number: H01S5/2086 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/22 , H01S2301/176
Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
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公开(公告)号：US20140146842A1
公开(公告)日：2014-05-29
申请号：US14092681
申请日：2013-11-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
IPC: H01S5/028
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少为0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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公开(公告)号：US10411160B2
公开(公告)日：2019-09-10
申请号：US15525433
申请日：2015-11-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christine Höss , Jens Dennemarck , Johann Koller
Abstract: An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.
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公开(公告)号：US10290997B2
公开(公告)日：2019-05-14
申请号：US15550888
申请日：2016-02-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christoph Stephan , Robert Walter , Stefan Hartauer , Christian Rumbolz
Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
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公开(公告)号：US20180287012A1
公开(公告)日：2018-10-04
申请号：US15525433
申请日：2015-11-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christine Höss , Jens Dennemarck , Johann Koller
CPC classification number: H01L33/22 , G01R31/2635 , H01L33/0045 , H01L33/007 , H01L33/0095 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/0207 , H01S5/0425 , H01S5/2231
Abstract: An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.
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Patent Agency Ranking
公开(公告)号：US09054487B2
公开(公告)日：2015-06-09
申请号：US14092681
申请日：2013-11-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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公开(公告)号：US09899801B2
公开(公告)日：2018-02-20
申请号：US14774416
申请日：2014-03-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Jens Mueller
CPC classification number: H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.
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公开(公告)号：US09876331B2
公开(公告)日：2018-01-23
申请号：US14774416
申请日：2014-03-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Jens Mueller
CPC classification number: H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.
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公开(公告)号：US09673590B2
公开(公告)日：2017-06-06
申请号：US14704532
申请日：2015-05-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
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公开(公告)号：US20160043530A1
公开(公告)日：2016-02-11
申请号：US14774416
申请日：2014-03-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Alfred Lell , Jens Mueller
CPC classification number: H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
Abstract: A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.
Abstract translation: 一种半导体激光器包括主体，具有设置在主体上的较窄宽度的条带和产生光辐射的活动区域，其中主体的横向相对于条带和侧表面的表面被覆盖 电绝缘保护层，作为接触件的导电层设置在带的顶侧上，至少在限定部分中在带的侧表面和保护层之间设置空腔。
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