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公开(公告)号：US10020421B2
公开(公告)日：2018-07-10
申请号：US15539996
申请日：2015-12-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Adrian Stefan Avramescu
Abstract: An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic radiation, wherein the active zone has at least two quantum films, wherein the first quantum film is arranged between a first barrier layer and a second barrier layer, wherein the second quantum film is arranged between the second barrier layer and a last barrier layer, and wherein bandgaps of the first barrier layer and of the second barrier layer are related differently to one another than bandgaps of the second barrier layer and of the last barrier layer.
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公开(公告)号：US20180048114A1
公开(公告)日：2018-02-15
申请号：US15559725
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Harald König , Adrian Stefan Avramescu
IPC: H01S5/026
CPC classification number: H01S5/026 , H01S5/0207 , H01S5/164 , H01S5/168 , H01S5/3211 , H01S2304/00
Abstract: An edge-emitting semiconductor laser includes a semiconductor structure laterally bounded by first and second facets and having a central section and a first edge section, a layer sequence offset relative to the central section in the growth direction in the first edge section such that, in the first edge section, one of the cladding layers or one of the waveguide layers is arranged in the growth direction at a height of the active layer in the central section, the layer sequence includes an epitaxially grown additional layer arranged between the upper side and the lower cladding layer, the additional layer is not arranged between the upper side and the lower cladding layer in the central section, and the additional layer is electrically insulating or has doping with the opposite sign to the lower cladding layer.
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公开(公告)号：US20160211646A1
公开(公告)日：2016-07-21
申请号：US14704532
申请日：2015-05-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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公开(公告)号：US12057311B2
公开(公告)日：2024-08-06
申请号：US17430329
申请日：2020-02-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Adrian Stefan Avramescu
IPC: H01L21/02 , H01L21/308 , H01L21/768
CPC classification number: H01L21/02538 , H01L21/02639 , H01L21/3086 , H01L21/76811
Abstract: A method for manufacturing a semiconductor apparatus may include forming a patterned mask over a substrate, so that a first region of a first main surface of the substrate is covered by a plurality of spaced-apart sub-structural elements of a dielectric material, and second regions of the first main surface are not covered. Each of the plurality of sub-structural elements is arranged between adjacent second regions. The method also comprises carrying out a selective growth process of semiconductor material, so that the semiconductor material is grown over the second regions of the first main surface.
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公开(公告)号：US11069835B2
公开(公告)日：2021-07-20
申请号：US16495803
申请日：2018-03-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Tansen Varghese , Martin Straßburg , Hans-Jürgen Lugauer , Sönke Fündling , Jana Hartmann , Frederik Steib , Andreas Waag
IPC: H01L33/20 , H01L25/075 , H01L33/00
Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.
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Patent Agency Ranking
公开(公告)号：US20200028029A1
公开(公告)日：2020-01-23
申请号：US16495803
申请日：2018-03-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Tansen Varghese , Martin Straßburg , Hans-Jürgen Lugauer , Sönke Fündling , Jana Hartmann , Frederik Steib , Andreas Waag
IPC: H01L33/20 , H01L33/00 , H01L25/075
Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.
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公开(公告)号：US20160240734A1
公开(公告)日：2016-08-18
申请号：US15024825
申请日：2014-10-09
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Adrian Stefan Avramescu , Teresa Wurm , Jelena Ristic , Alvaro Gomez-Iglesias
CPC classification number: H01L33/145 , H01L33/04 , H01L33/12 , H01L33/32 , H01L33/325 , H01S5/2009 , H01S5/3054 , H01S5/3063 , H01S5/34333
Abstract: An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlxInGa1-x-yN where 0 =0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x2
Abstract translation: 光电子半导体元件包括基于氮化物化合物半导体的层叠，并且具有n型半导体区域，p型半导体区域和布置在n型半导体区域和p型半导体区域之间的有源层。 为了形成电子势垒，p型半导体区域包括具有由Al x In Ga 1-x-y N组成的多个p掺杂层的层序列，其中0≤x≤1,0<= y <= 1和 x + y <= 1。 层序列包括具有铝比例x1> 0.5并且厚度不大于3nm的第一p掺杂层，并且第一p掺杂层在远离有源层的一侧接下来是在 具有铝比例x2
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公开(公告)号：US20150255956A1
公开(公告)日：2015-09-10
申请号：US14430685
申请日：2013-09-03
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Uwe Strauß , Teresa Wurm , Adrian Stefan Avramescu , Georg Brüderl , Christoph Eichler , Sven Gerhard
CPC classification number: H01S5/2031 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S5/4031
Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.
Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。
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公开(公告)号：US20140146842A1
公开(公告)日：2014-05-29
申请号：US14092681
申请日：2013-11-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
IPC: H01S5/028
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少为0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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公开(公告)号：US09373937B2
公开(公告)日：2016-06-21
申请号：US14430685
申请日：2013-09-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauβ , Teresa Wurm , Adrian Stefan Avramescu , Georg Brüderl , Christoph Eichler , Sven Gerhard
CPC classification number: H01S5/2031 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S5/4031
Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.
Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。
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