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公开(公告)号:US20220231193A1
公开(公告)日:2022-07-21
申请号:US17605533
申请日:2020-03-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Ruth BOSS , Sebastian WITTMANN , Korbinian PERZLMAIER , Frank SINGER
Abstract: The invention relates to a method for manufacturing modules with one or more optoelectronic components, comprising the steps: producing at least one layer stack providing a base module on a carrier having a first layer, an active layer formed thereon, and a second layer formed thereon; exposing a surface area of the first layer facing away from the carrier; forming a first contact to a surface region of the second layer facing away from the carrier; and forming a second contact to the surface area of the first layer facing away from the carrier.
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公开(公告)号:US20210104574A1
公开(公告)日:2021-04-08
申请号:US17039283
申请日:2020-09-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US20170200860A1
公开(公告)日:2017-07-13
申请号:US15313531
申请日:2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Korbinian PERZLMAIER , Bjoern MUERMANN , Karl ENGL , Christian EICHINGER
IPC: H01L33/38 , H01L31/0224 , H01L51/44 , H01L33/42 , H01L51/52
CPC classification number: H01L33/38 , H01L31/022466 , H01L33/42 , H01L51/442 , H01L51/445 , H01L51/5203 , H01L51/5215 , H01L51/5234 , Y02E10/549
Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.
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公开(公告)号:US20220285430A1
公开(公告)日:2022-09-08
申请号:US17733892
申请日:2022-04-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US20220148897A1
公开(公告)日:2022-05-12
申请号:US17440841
申请日:2020-02-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Tobias MEYER , Korbinian PERZLMAIER
Abstract: A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.
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公开(公告)号:US20220123046A1
公开(公告)日:2022-04-21
申请号:US17515338
申请日:2021-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US20180315891A1
公开(公告)日:2018-11-01
申请号:US15770334
申请日:2016-10-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Berthold HAHN , Korbinian PERZLMAIER , Christian LEIRER , Anna KASPRZAK-ZABLOCKA
Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ΔUbet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2·ΔUbet at the earliest.
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公开(公告)号:US20180254389A1
公开(公告)日:2018-09-06
申请号:US15760209
申请日:2016-09-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Korbinian PERZLMAIER , Christian LEIRER
Abstract: The invention relates to a semiconductor component comprising: a semiconductor chip (10) which has a semiconductor body (1) with an active region (12) and a substrate (3) with a first conductor body (31), a second conductor body (32) and a first moulded body (33); and a second moulded body (5); wherein the second moulded body (5) completely surrounds the semiconductor chip (10) in lateral directions (L), the semiconductor chip (10) extends all the way through the second moulded body (5) in a vertical direction (V), at least some parts of an upper side and a lower side of the semiconductor chip (10) are not covered by the second moulded body (5), the substrate (3) is mechanically connected to the semiconductor body (2), the active region (12) is connected to the first conductor body (31) and the second conductor body (32) in an electroconductive manner, and the second moulded body (5) is directly adjacent to the substrate (3) and the semiconductor body (1).
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公开(公告)号:US20180197843A1
公开(公告)日:2018-07-12
申请号:US15741731
申请日:2016-07-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Christian LEIRER , Korbinian PERZLMAIER
Abstract: An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8A) connects the second via (12) to the n-type semiconductor region (5); and an ESD protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the ESD protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forward direction of the ESD protection element (15) is anti-parallel to a forward direction of the semiconductor layer sequence (2).
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公开(公告)号:US20220375991A1
公开(公告)日:2022-11-24
申请号:US17815866
申请日:2022-07-28
Applicant: Osram Opto Semiconductors Gmbh
Inventor: Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Toblas MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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