METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR
    13.
    发明申请
    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR 审中-公开
    制造多波幅图像传感器的方法

    公开(公告)号:US20160268333A1

    公开(公告)日:2016-09-15

    申请号:US15166002

    申请日:2016-05-26

    Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.

    Abstract translation: 制造图像系统的方法包括形成包括第一半导体衬底和第一互连层的第一晶片。 像素阵列形成在第一半导体衬底的成像区域中,并且第一绝缘填充沟槽形成在第一半导体衬底的外围电路区域中。 此外,形成包括第二半导体衬底和第二互连层的第二晶片。 在第二半导体衬底中形成第二绝缘填充沟槽,并且将第一晶片接合到第二晶片。 第三晶片的第三互连层被结合到第二晶片。 通过第一和第二互连层并穿过第一和第二绝缘填充沟槽形成至少一个深通孔腔。 至少一个深通孔腔被导电材料填充以形成深通孔。

    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR
    14.
    发明申请
    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR 有权
    制造多波幅图像传感器的方法

    公开(公告)号:US20160111468A1

    公开(公告)日:2016-04-21

    申请号:US14515307

    申请日:2014-10-15

    Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

    Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后,在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

    Dual-Mode Image Sensor With A Signal-Separating Color Filter Array, And Method For Same
    15.
    发明申请
    Dual-Mode Image Sensor With A Signal-Separating Color Filter Array, And Method For Same 有权
    具有信号分离滤色器阵列的双模式图像传感器及其相同方法

    公开(公告)号:US20160104735A1

    公开(公告)日:2016-04-14

    申请号:US14510025

    申请日:2014-10-08

    Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

    Abstract translation: 具有信号分离CFA的双模式图像传感器包括包括多个光电二极管区域的基板和具有均匀的第一高度的多个高光谱滤光器,并且用于传输第一电磁波长范围。 每个高光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于在第二电磁波长范围内传输一个或多个光谱带的多个短光谱滤波器。 每个短光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于阻挡第一电磁波长范围的多个单层阻挡滤波器。 每个单层阻塞滤波器设置在相应的短光谱滤波器上。 每个单层阻挡滤波器及其相应的短光谱滤波器具有基本上等于第一高度的组合高度。

    Image transformation and multi-view output systems and methods
    16.
    发明授权
    Image transformation and multi-view output systems and methods 有权
    图像转换和多视图输出系统和方法

    公开(公告)号:US09196022B2

    公开(公告)日:2015-11-24

    申请号:US14203016

    申请日:2014-03-10

    Inventor: Jin Li Jizhang Shan

    Abstract: An image transformation and multi-view output system and associated method generates output view data from raw image data using a coordinate mapping that reverse maps pixels of the output view data onto the raw image data. The coordinate mapping is stored in a lookup table and incorporates perspective correction and/or distortion correction for a wide angle lens used to capture the raw image data. The use of the lookup table with reverse mapping improves performance of the image transformation and multi-view output system to allow multi-view video streaming of images corrected for one or both of perspective and distortion.

    Abstract translation: 图像变换和多视图输出系统及相关方法使用将输出视图数据的像素反向映射到原始图像数据的坐标映射从原始图像数据生成输出视图数据。 坐标映射被存储在查找表中,并且包括用于捕获原始图像数据的广角镜头的透视校正和/或失真校正。 使用具有反向映射的查找表改善了图像变换和多视图输出系统的性能,以允许对视角和失真中的一个或两个进行修正的图像的多视图视频流传输。

    Optical shield in a pixel cell planarization layer for black level correction
    17.
    发明授权
    Optical shield in a pixel cell planarization layer for black level correction 有权
    用于黑色电平校正的像素单元平面化层中的光学屏蔽

    公开(公告)号:US08981512B1

    公开(公告)日:2015-03-17

    申请号:US14030395

    申请日:2013-09-18

    CPC classification number: H01L27/14623 H01L27/14621 H01L27/14627

    Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.

    Abstract translation: 像素阵列包括设置在半导体层中并布置在像素阵列中的多个光电二极管。 滤色器层靠近半导体层设置。 光通过滤色器层被引导到多个光电二极管中的至少第一个。 光屏蔽层靠近滤色器层设置。 滤色器层设置在光学屏蔽层和半导体层之间。 光屏蔽层屏蔽来自光的多个光电二极管中的至少一个。

    METHOD OF FORMING DUAL SIZE MICROLENSES FOR IMAGE SENSORS
    18.
    发明申请
    METHOD OF FORMING DUAL SIZE MICROLENSES FOR IMAGE SENSORS 有权
    形成图像传感器的双尺寸微孔的方法

    公开(公告)号:US20140306360A1

    公开(公告)日:2014-10-16

    申请号:US13860859

    申请日:2013-04-11

    Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

    Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙,以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

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