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公开(公告)号：US12119362B2
公开(公告)日：2024-10-15
申请号：US17185129
申请日：2021-02-25
Inventor： Sanshiro Shishido , Shinichi Machida , Takeyoshi Tokuhara , Katsuya Nozawa
IPC: H01L27/14 , G02B5/20 , H01L27/146 , H01L31/0352 , H01L31/0384 , H01L27/142 , H01L31/0256
CPC classification number: H01L27/14625 , G02B5/208 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L31/035218 , H01L31/035227 , H01L31/03845 , H01L27/142 , H01L27/14643 , H01L2031/0344
Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.
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公开(公告)号：US11968457B2
公开(公告)日：2024-04-23
申请号：US17695728
申请日：2022-03-15
Inventor： Katsuya Nozawa
Abstract: An imaging apparatus includes: an imaging device that has variable sensitivity and that acquires images with a sampling cycle; and a control circuit that controls the imaging device. The control circuit changes a sensitivity of the imaging device with a first cycle shorter than the sampling cycle. Based on control of the control circuit, the imaging device acquires a plurality of images of a subject with the sampling cycle. The subject includes a first component that changes with a second cycle different from the first cycle.
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公开(公告)号：US11910625B2
公开(公告)日：2024-02-20
申请号：US17219954
申请日：2021-04-01
Inventor： Katsuya Nozawa , Takeyoshi Tokuhara , Nozomu Matsukawa , Sanshiro Shishido
CPC classification number: H10K39/32 , H04N5/33 , H04N25/709 , H10K10/29 , H10K30/211 , H10K30/30
Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.
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公开(公告)号：US11812625B2
公开(公告)日：2023-11-07
申请号：US17080938
申请日：2020-10-27
Inventor： Katsuya Nozawa
CPC classification number: H10K30/87 , H10K30/82 , H10K85/113 , H10K85/215 , H10K85/311
Abstract: A photoelectric converter includes a first electrode containing a transparent conductive material, a second electrode, and a multilayer body that is positioned between the first electrode and the second electrode, and that has a photoelectric conversion function. The multilayer body includes a first layer and a second layer positioned between the first layer and the second electrode. The first layer absorbs light in a first wavelength band of 360 nm or longer and transmits light in a second wavelength band, the second wavelength band including wavelengths longer than wavelengths included in the first wavelength band. The second layer absorbs the light in the second wavelength band. The multilayer body substantially does not have sensitivity for photoelectric conversion in the first wavelength band and has sensitivity for photoelectric conversion in the second wavelength band.
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公开(公告)号：US09843740B2
公开(公告)日：2017-12-12
申请号：US14391310
申请日：2014-02-07
Inventor： Katsuya Nozawa
CPC classification number: H04N5/238 , G01J3/0229 , G01J2003/1213 , G01J2003/2826 , G02B5/201 , G02B27/1013 , G02B27/123 , H04N5/2351
Abstract: A multispectral imaging device includes: an illumination optical system; and an imaging optical system, wherein the illumination optical system includes a filter group disposed in an overlap region of bundles of illumination rays which reach points in an imaging area of a subject, and including at least a first filter and a second filter having different transmission properties, and the imaging optical system includes: an image sensor which includes at least first light receiving elements and second light receiving elements; and a separation optical element which guides light which has passed through the first filter to the first light receiving elements, and guides light which has passed through the second filter to the second light receiving elements.
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Patent Agency Ranking
公开(公告)号：US20150103229A1
公开(公告)日：2015-04-16
申请号：US14391310
申请日：2014-02-07
Inventor： Katsuya Nozawa
CPC classification number: H04N5/238 , G01J3/0229 , G01J2003/1213 , G01J2003/2826 , G02B5/201 , G02B27/1013 , G02B27/123 , H04N5/2351
Abstract: A multispectral imaging device includes: an illumination optical system; and an imaging optical system, wherein the illumination optical system includes a filter group disposed in an overlap region of bundles of illumination rays which reach points in an imaging area of a subject, and including at least a first filter and a second filter having different transmission properties, and the imaging optical system includes: an image sensor which includes at least first light receiving elements and second light receiving elements; and a separation optical element which guides light which has passed through the first filter to the first light receiving elements, and guides light which has passed through the second filter to the second light receiving elements.
Abstract translation: 多光谱成像装置包括：照明光学系统; 以及成像光学系统，其中所述照明光学系统包括设置在到达被摄体的成像区域中的点的照明光束的重叠区域中的滤光器组，并且至少包括具有不同透射率的第一滤光器和第二滤光器 特性，成像光学系统包括：至少包括第一光接收元件和第二光接收元件的图像传感器; 以及分离光学元件，其将已经通过第一滤光器的光引导到第一光接收元件，并将已经通过第二滤光器的光引导到第二光接收元件。
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公开(公告)号：US11955493B2
公开(公告)日：2024-04-09
申请号：US17095691
申请日：2020-11-11
Inventor： Yuuko Tomekawa , Katsuya Nozawa
IPC: H01L27/146 , H01L27/30 , H10K39/32
CPC classification number: H01L27/14605 , H01L27/14636 , H10K39/32
Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.
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公开(公告)号：US11793008B2
公开(公告)日：2023-10-17
申请号：US17364493
申请日：2021-06-30
Inventor： Katsuya Nozawa
CPC classification number: H10K39/32 , H01L27/146 , H01L31/10 , H10K30/353 , H10K85/221 , H10K30/30 , H10K85/211
Abstract: An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.
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公开(公告)号：US11711932B2
公开(公告)日：2023-07-25
申请号：US17313563
申请日：2021-05-06
Inventor： Masaya Hirade , Manabu Nakata , Katsuya Nozawa , Yasunori Inoue
CPC classification number: H10K30/82 , H10K30/353 , H10K39/32 , H10K71/135 , H10K71/164 , H10K71/231
Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.
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公开(公告)号：US11438539B2
公开(公告)日：2022-09-06
申请号：US17243170
申请日：2021-04-28
Inventor： Katsuya Nozawa , Yasuo Miyake
IPC: H04N5/374 , H04N5/3745 , H04N5/355 , G01S17/36 , G01S17/894 , H01L27/144 , H01L27/146 , H04N5/225 , H04N5/351 , H04N5/369 , H04N5/378
Abstract: An imaging system includes a first illuminator that emits light whose intensity varies with time; and a first imaging device that comprises a first imaging cell; and a first bias control line. The first imaging cell includes a first electrode, a second electrode electrically connected to the first bias control line, and a photoelectric conversion layer sandwiched between the first electrode and the second electrode. During a first period from a reset of the first imaging cell until a readout of signal charge accumulated in the first imaging cell, the first bias control line supplies to the second electrode a first bias control signal. The first bias control signal is synchronized with the intensity of the light varying with time.
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