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公开(公告)号：US20230223410A1
公开(公告)日：2023-07-13
申请号：US18107834
申请日：2023-02-09
Inventor： Tokuhiko TAMAKI , Hirohisa OHTSUKI , Ryohei MIYAGAWA , Motonori ISHII
IPC: H01L27/146 , H04N25/77
CPC classification number: H01L27/14603 , H01L27/14609 , H04N25/77 , H01L27/14643 , H01L27/14612 , H01L27/14636 , H04N25/709
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US20200177787A1
公开(公告)日：2020-06-04
申请号：US16782411
申请日：2020-02-05
Inventor： Yoshiaki SATOU , Yasuo MIYAKE , Yasunori INOUE , Tokuhiko TAMAKI
Abstract: An imaging device includes a pixel including a photoelectric converter, where the pixel captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A sensitivity of the photoelectric converter in the first exposure period is different from a sensitivity of the photoelectric converter in the second exposure period, and the imaging device generates multiple-exposure image data including at least the first data and the second data.
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公开(公告)号：US20170150073A1
公开(公告)日：2017-05-25
申请号：US15423397
申请日：2017-02-02
Inventor： Takayoshi YAMADA , Masayuki TAKASE , Tokuhiko TAMAKI , Masashi MURAKAMI
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.
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公开(公告)号：US20230247315A1
公开(公告)日：2023-08-03
申请号：US18190002
申请日：2023-03-24
Inventor： Yasuo MIYAKE , Masashi MURAKAMI , Tokuhiko TAMAKI , Yoshiaki SATOU
IPC: H04N25/53 , H10K39/32 , H01L27/146
CPC classification number: H04N25/53 , H10K39/32 , H01L27/14609 , H01L27/14612
Abstract: An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.
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公开(公告)号：US20230224600A1
公开(公告)日：2023-07-13
申请号：US18180708
申请日：2023-03-08
Inventor： Kazuko NISHIMURA , Tokuhiko TAMAKI , Masashi MURAKAMI
IPC: H04N5/335 , H01L27/146
CPC classification number: H04N25/585 , H04N25/62 , H04N25/65 , H04N25/75 , H01L27/14643 , H04N25/778 , H04N25/77 , H01L27/14636 , H01L27/14614
Abstract: An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.
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Patent Agency Ranking
公开(公告)号：US20190313038A1
公开(公告)日：2019-10-10
申请号：US16444841
申请日：2019-06-18
Inventor： Yasuo MIYAKE , Masashi MURAKAMI , Tokuhiko TAMAKI , Yoshiaki SATOU
Abstract: An electronic device including: a photosensitive layer that converts incident light into a signal charge; a first electrode that collects the signal charge; and a first carrier blocking layer between the photosensitive layer and the first electrode. The carrier blocking layer is configured to block a carrier a polarity of which is different from that of the signal charge. Under a first range of biases on the electronic device, the photosensitive layer is configured to generate photocurrent while illuminated. Under a second range of biases on the electronic device, the photosensitive layer is configured to generate lower photocurrent while illuminated compared to under the first range of biases.
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公开(公告)号：US20190250042A1
公开(公告)日：2019-08-15
申请号：US16391160
申请日：2019-04-22
Inventor： Naoki SHIMASAKI , Tokuhiko TAMAKI , Sanshiro SHISHIDO
IPC: G01J5/08 , H04N5/3745 , G01J1/04 , H04N5/357 , H01L27/146 , H04N5/33 , G01J1/42 , G01J3/36 , G01J5/20 , H04N3/14 , H04N5/232 , H04N5/378
CPC classification number: G01J5/0853 , G01J1/0407 , G01J1/42 , G01J3/36 , G01J5/0846 , G01J5/20 , H01L27/14609 , H01L27/14643 , H01L27/14665 , H01L27/14676 , H04N3/1512 , H04N5/23241 , H04N5/33 , H04N5/3575 , H04N5/3745 , H04N5/378
Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.
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公开(公告)号：US20190051684A1
公开(公告)日：2019-02-14
申请号：US16164590
申请日：2018-10-18
Inventor： Masayuki TAKASE , Takayoshi YAMADA , Tokuhiko TAMAKI
IPC: H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
Abstract: An imaging device includes a pixel comprising a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a pixel electrode on the first surface; an auxiliary electrode on the first surface, the auxiliary electrode being spaced from the pixel electrode; an upper electrode on the second surface, the upper electrode facing the pixel electrode and the auxiliary electrode; and an amplification transistor having a gate coupled to the pixel electrode. The imaging device also includes voltage application circuitry that generates a first voltage and a second voltage different from the first voltage, the voltage application circuitry being coupled to the auxiliary electrode. The voltage application circuitry selectively supplies either the first voltage or the second voltage to the auxiliary electrode.
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公开(公告)号：US20190013340A1
公开(公告)日：2019-01-10
申请号：US16130664
申请日：2018-09-13
Inventor： Tokuhiko TAMAKI , Hirohisa OHTSUKI , Ryohei MIYAGAWA , Motonori ISHII
IPC: H01L27/146 , H04N5/3745 , H04N5/369
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/3698 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage;and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US20180227527A1
公开(公告)日：2018-08-09
申请号：US15946448
申请日：2018-04-05
Inventor： Tokuhiko TAMAKI
CPC classification number: H04N5/378 , H04N5/2253 , H04N5/2254 , H04N5/35563 , H04N5/3696
Abstract: An imaging device, including: a semiconductor substrate; a first pixel including a first photoelectric converter that converts incident light into first charges, a first charge detection circuit on the semiconductor substrate, the first charge detection circuit electrically connected to the first photoelectric converter and detecting the first charges, and a first capacitive element electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charges; and a second pixel comprising a second photoelectric converter that converts incident light into second charges, and a second charge detection circuit on the semiconductor substrate, the second charge detection circuit electrically connected to the second photoelectric converter and detecting the second charges, wherein the first capacitive element is at least partially located between the first photoelectric converter and the second photoelectric converter when viewed from a normal direction of the semiconductor substrate.
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