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    FULL SPECTRUM SOLID STATE WHITE LIGHT SOURCE, METHOD FOR MANUFACTURING AND APPLICATIONS
    14.
    发明申请
    FULL SPECTRUM SOLID STATE WHITE LIGHT SOURCE, METHOD FOR MANUFACTURING AND APPLICATIONS 有权
    全光谱固体白光源，制造和应用方法

    公开(公告)号：US20130113011A1

    公开(公告)日：2013-05-09

    申请号：US13808923

    申请日：2011-07-19

    Applicant: Partha S. Dutta

    Inventor： Partha S. Dutta

    IPC: H01L33/58 ,  H01L33/00 ,  H01L33/44

    CPC classification number: H01L33/58 ,  B82Y30/00 ,  C09K11/7731 ,  H01L33/005 ,  H01L33/44 ,  H01L33/502 ,  H01L33/504 ,  H01L2933/0041 ,  Y02B20/181 ,  Y10S977/774 ,  Y10S977/949

    Abstract: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator. Down-converted secondary light may be produced by the system.

    Abstract translation: 一种制造用于光系统的下转换衬底的方法包括：形成包括一种或多种磷光体材料的第一结晶层，以及任选地将至少一种激活剂施加到晶体层，在高温下加热晶体层以促进 在晶体层中晶体生长，并绘出结晶层并使晶体层冷却以形成下转换衬底。 光系统包括用于发射短波长一次发射的激发源; 以及下转换衬底，其布置在来自激发源的至少一些初级发射的路径中，以将至少一部分初级发射转换成更长波长的二次发射，其中衬底包括一个或多个结晶层，其中 每个结晶层包括一种或多种磷光体材料，以及任选的至少一种激活剂。 下变频二次光可以由系统产生。

    Multicomponent homogeneous alloys and method for making same
    16.
    发明授权
    Multicomponent homogeneous alloys and method for making same 有权
    多组分均质合金及其制备方法

    公开(公告)号：US06613162B1

    公开(公告)日：2003-09-02

    申请号：US09696626

    申请日：2000-10-25

    Applicant: Partha S. Dutta ,  Thomas R. Miller

    Inventor： Partha S. Dutta ,  Thomas R. Miller

    IPC: C30B2940

    CPC classification number: C30B11/002 ,  C30B29/40

    Abstract: The present application discloses a method for preparing a homogeneous ternary or quaternary alloy from a quaternary melt. The method includes providing a family of phase diagrams for the quaternary melt which shows (i) composition/temperature data, (ii) tie lines connecting equilibrium liquid and solid compositions, and (iii) isotherms representing boundaries of a miscibility gap. Based on the family of phase diagrams, a quaternary melt composition and an alloy growth temperature is selected. A quaternary melt having the selected quaternary melt composition is provided and a ternary or quaternary alloy is grown from the quaternary melt at the selected alloy growth temperature. A method for making homogeneous ternary or quaternary alloy from a ternary or quaternary melt is also disclosed, as are homogeneous quaternary single-crystal alloys which are substantially free from crystal defects and which have the formula AxB1−xCyD1−y, x and y being the same or different and in the range of 0.001 to 0.999.

    Abstract translation: 本申请公开了一种从四次熔体制备均匀的三元或四元合金的方法。 该方法包括为四元熔体提供一系列相图，其显示（i）组成/温度数据，（ii）连接平衡液体和固体组合物的连接线，以及（iii）表示混合间隙的边界的等温线。 基于相图系列，选择四次熔体组成和合金生长温度。 提供具有所选择的四级熔融组合物的四级熔体，并且在所选择的合金生长温度下从季熔体生长三元或四元合金。 还公开了从三元或四元熔体制备均匀的三元或四元合金的方法，以及基本上没有晶体缺陷并且具有式AxB1-xCyD1-y的均匀的四元单晶合金，x和y是 相同或不同，在0.001至0.999的范围内。

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