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    MULTIPLEXED PULSE MODULATION USING SUPERPOSITION
    1.
    发明申请
    MULTIPLEXED PULSE MODULATION USING SUPERPOSITION 有权
    多重脉冲调制使用超声波

    公开(公告)号：US20130336659A1

    公开(公告)日：2013-12-19

    申请号：US14002198

    申请日：2012-01-10

    Applicant: Partha S. Dutta ,  Sruthi Muralidharan

    Inventor： Partha S. Dutta ,  Sruthi Muralidharan

    IPC: H04J14/08

    CPC classification number: H04J14/08 ,  H03K7/02 ,  H03K7/08 ,  H04B10/11 ,  H04B10/502 ,  H04B10/504 ,  H04B10/508 ,  H04B14/02 ,  H04L25/4902

    Abstract: The present invention relates to an optical transmitter for transmitting data. The optical transmitter includes a pulse generator for generating N data streams overlapping in time from a de-multiplexed data source. Each respective data stream has pulses with shapes unique to that respective data stream. The transmitter also includes an optical source optically transmitting an output pulse that is generated by summing the uniquely shaped pulses from each respective data stream that are overlapping in time. Each output pulse represents N bits of the data source, where N>1.

    Abstract translation: 本发明涉及一种用于发送数据的光发射机。 光发射机包括脉冲发生器，用于产生从解复用数据源在时间上重叠的N个数据流。 每个相应的数据流具有对该相应数据流唯一的形状的脉冲。 发射机还包括光源，其光学传输通过对来自与时间重叠的每个相应数据流相加的唯一成形脉冲相加产生的输出脉冲。 每个输出脉冲表示数据源的N位，其中N> 1。

    Phosphors of rare earth and transition metal doped Ca1+xSr1-xGayIn2-ySzSe3-zF2; methods of manufacturing and applications
    3.
    发明申请
    Phosphors of rare earth and transition metal doped Ca1+xSr1-xGayIn2-ySzSe3-zF2; methods of manufacturing and applications 有权
    稀土和过渡金属掺杂的磷光体Ca1 + xSr1-xGayIn2-ySzSe3-zF2; 制造和应用方法

    公开(公告)号：US20120119145A1

    公开(公告)日：2012-05-17

    申请号：US13293581

    申请日：2011-11-10

    Applicant: Partha S. Dutta

    Inventor： Partha S. Dutta

    IPC: C09K11/85

    CPC classification number: C09K11/886 ,  C09K11/7731 ,  C09K11/7733 ,  C09K11/7791 ,  H05B33/14

    Abstract: Energy down conversion phosphors represented by the chemical formula Ca1+xSr1−xGayIn2−ySzSe3−zF2 where (0≦x≦1, 0≦y≦2, 0≦z≦3) doped with rare earth and/or transition metal elements is disclosed. Dopant impurities may be one or more species such as Eu, Ce, Mn, Ru, and/or mixtures thereof present as activators. The molar fractions x, y and z, the dopant species and the dopant concentration may be varied to tune the peak emission wavelength and/or the width of the emission peak.

    Abstract translation: 公开了由化学式Ca1 + xSr1-xGayIn2-ySzSe3-zF2表示的能量下转换荧光体，其中公开了掺杂有稀土和/或过渡金属元素的（0＆amp; nEE; x＆lt; 1E; 1,0＆amp; nlE; y＆nlE; 2,0和nlE; z＆ 。 掺杂杂质可以是一种或多种物质，例如Eu，Ce，Mn，Ru和/或其作为活化剂的混合物。 可以改变摩尔分数x，y和z，掺杂剂种类和掺杂剂浓度以调节发射峰的峰值发射波长和/或宽度。

    Multiplexed pulse modulation using superposition
    5.
    发明授权
    Multiplexed pulse modulation using superposition 有权
    多重脉冲调制使用叠加

    公开(公告)号：US09363033B2

    公开(公告)日：2016-06-07

    申请号：US14002198

    申请日：2012-01-10

    Applicant: Partha S. Dutta ,  Sruthi Muralidharan

    Inventor： Partha S. Dutta ,  Sruthi Muralidharan

    IPC: H04J14/08 ,  H04B10/11 ,  H04L25/49 ,  H03K7/02 ,  H04B10/508 ,  H04B10/50 ,  H04B14/02 ,  H03K7/08

    CPC classification number: H04J14/08 ,  H03K7/02 ,  H03K7/08 ,  H04B10/11 ,  H04B10/502 ,  H04B10/504 ,  H04B10/508 ,  H04B14/02 ,  H04L25/4902

    Abstract: The present invention relates to an optical transmitter for transmitting data. The optical transmitter includes a pulse generator for generating N data streams overlapping in time from a de-multiplexed data source. Each respective data stream has pulses with shapes unique to that respective data stream. The transmitter also includes an optical source optically transmitting an output pulse that is generated by summing the uniquely shaped pulses from each respective data stream that are overlapping in time. Each output pulse represents N bits of the data source, where N>1.

    Abstract translation: 本发明涉及一种用于发送数据的光发射机。 光发射机包括脉冲发生器，用于产生从解复用数据源在时间上重叠的N个数据流。 每个相应的数据流具有对该相应数据流唯一的形状的脉冲。 发射机还包括光源，其光学传输通过对来自与时间重叠的每个相应数据流相加的唯一成形脉冲相加产生的输出脉冲。 每个输出脉冲表示数据源的N位，其中N> 1。

    Alloys and methods for their preparation
    8.
    发明授权
    Alloys and methods for their preparation 失效
    合金及其制备方法

    公开(公告)号：US06273969B1

    公开(公告)日：2001-08-14

    申请号：US09061883

    申请日：1998-04-17

    Applicant: Partha S. Dutta ,  Aleksandar G. Ostrogorsky

    Inventor： Partha S. Dutta ,  Aleksandar G. Ostrogorsky

    IPC: C22C1200

    CPC classification number: C30B11/00 ,  C22C12/00 ,  C22C28/00 ,  C30B29/40 ,  C30B29/52

    Abstract: The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth element D are present as a binary compound CD. In addition, the alloy is substantially free from binary compounds AD, BC, AC, and BD. These alloys can be characterized as semiconducting, quasi-binary, single phase alloys having the formula (AB)x(CD)1−x, where x is between 0 and 1 and where A, B, C, and D are different. The present invention also relates to a method of producing an alloy. The method includes providing a first binary material AB and providing a second binary material CD. The first binary material AB and the second binary material CD are contacted under conditions effective to mix the first binary material AB and the second binary material CD without decomposing either the first binary material AB or the second binary material CD. The quasi-binary alloys of the present invention are substantially different from the typical quaternary AxB1−xCyD1−y alloys that are prepared using known conventional methods. In addition, alloys of the present invention are significantly less expensive and have structural, optical, and electrical properties that are significantly different when compared to conventional quaternary alloys and growth techniques, making them particularly well suited for use as semiconductors, such as for the thermo-voltaic generation of electricity and infrared detection.

    Abstract translation: 本发明涉及包含第一元素A，第二元素B，第三元素C和第四元素D的合金。在合金中，第一元素A和第二元素B作为二元化合物AB存在，第三元素 元素C和第四元素D作为二元化合物CD存在。 此外，合金基本上不含二元化合物AD，BC，AC和BD。 这些合金可以表征为具有式（AB）x（CD）1-x的半导体，准二元，单相合金，其中x在0和1之间，并且其中A，B，C和D不同。 本发明还涉及合金的制造方法。 该方法包括提供第一二元材料AB并提供第二二元材料CD。 第一二元材料AB和第二二元材料CD在有效混合第一二元材料AB和第二二元材料CD的条件下接触而不分解第一二元材料AB或第二二元材料CD。 本发明的准二元合金与使用已知的常规方法制备的典型的四价AxB1-xCyD1-y合金基本不同。 此外，与常规的四元合金和生长技术相比，本发明的合金显着地更便宜并且具有显着不同的结构，光学和电学性能，使得它们特别适合用作半导体，例如用于热 光电发电和红外探测。

    Phosphors of rare earth and transition metal doped Ca1+xSr1-xGayIn2-ySzSe3-zF2; manufacturing and applications
    9.
    发明授权
    Phosphors of rare earth and transition metal doped Ca1+xSr1-xGayIn2-ySzSe3-zF2; manufacturing and applications 有权
    稀土和过渡金属掺杂的磷光体Ca1 + xSr1-xGayIn2-ySzSe3-zF2; 制造和应用方法

    公开(公告)号：US08974695B2

    公开(公告)日：2015-03-10

    申请号：US13293581

    申请日：2011-11-10

    Applicant: Partha S. Dutta

    Inventor： Partha S. Dutta

    IPC: C09K11/61 ,  C09K11/56 ,  C09K11/88 ,  C09K11/62 ,  H05B33/14

    CPC classification number: C09K11/886 ,  C09K11/7731 ,  C09K11/7733 ,  C09K11/7791 ,  H05B33/14

    Abstract: Energy down conversion phosphors represented by the chemical formula Ca1+xSr1−xGayIn2−ySzSe3−zF2 where (0≦x≦1, 0≦y≦2, 0≦z≦3) doped with rare earth and/or transition metal elements is disclosed. Dopant impurities may be one or more species such as Eu, Ce, Mn, Ru, and/or mixtures thereof present as activators. The molar fractions x, y and z, the dopant species and the dopant concentration may be varied to tune the peak emission wavelength and/or the width of the emission peak.

    Abstract translation: 公开了由化学式Ca1 + xSr1-xGayIn2-ySzSe3-zF2表示的能量下转换荧光体，其中公开了掺杂有稀土和/或过渡金属元素的（0＆amp; nEE; x＆lt; 1E; 1,0＆amp; nlE; y＆nlE; 2,0和nlE; z＆ 。 掺杂杂质可以是一种或多种物质，例如Eu，Ce，Mn，Ru和/或其作为活化剂的混合物。 可以改变摩尔分数x，y和z，掺杂剂种类和掺杂剂浓度以调节发射峰的峰值发射波长和/或宽度。

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