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11.发明申请ENERGY STORAGE DEVICE, METHOD OF MANUFACTURING SAME, AND MOBILE ELECTRONIC DEVICE CONTAINING SAME 有权能量储存装置，其制造方法和含有其的移动电子装置公开(公告)号：US20140335918A1
公开(公告)日：2014-11-13
申请号：US13977564
申请日：2012-04-25
CPC分类号： H01G11/02 , G06F1/1635 , H01G9/04 , H01G11/26 , H01G11/30 , H01G11/46 , H01G11/52 , H01G11/54 , H01G11/84 , H04M1/0262 , H04M2001/0204 , Y02E60/13 , Y10T29/49115
摘要： An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.
摘要翻译： 能量存储装置包括第一多孔半导体结构（510），第一多孔半导体结构（510）包括含有第一电解质（514）的第一多个通道（511）和包含第二多个通道（521）的第二多孔半导体结构（520） 第二电解质（524）。 在一个实施例中，能量存储装置还包括在第一和第二多孔半导体结构中的至少一个上的膜（535），该膜包括能够显示可逆电子转移反应的材料。 在另一个实施方案中，第一和第二电解质中的至少一个包含多个金属离子。 在另一个实施方案中，第一和第二电解质一起组成氧化还原体系。
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公开(公告)号：US08659058B2
公开(公告)日：2014-02-25
申请号：US13051745
申请日：2011-03-18
IPC分类号： H01L29/772
CPC分类号： H01L29/41791 , C23C16/305 , C23C16/45525 , H01L21/28562 , H01L21/28568 , H01L21/76814 , H01L21/76843 , H01L21/76897 , H01L23/53257 , H01L23/53266 , H01L29/66795 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
摘要翻译： 本发明的实施例描述了在半导体器件上形成硫化镍层的方法。 通过将基板交替地暴露于含镍前体和含硫前体而在基板上形成硫化镍层。
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13.发明申请METHOD OF INCREASING AN ENERGY DENSITY AND AN ACHIEVABLE POWER OUTPUT OF AN ENERGY STORAGE DEVICE 审中-公开提高能源密度的方法和能源储存装置的可实现的功率输出公开(公告)号：US20130273261A1
公开(公告)日：2013-10-17
申请号：US13977131
申请日：2011-09-30
申请人： Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Scott B. Clendenning , Eric C. Hannah , Tomm V. Aldridge , John L. Gustafson
发明人： Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Scott B. Clendenning , Eric C. Hannah , Tomm V. Aldridge , John L. Gustafson
IPC分类号： H01G9/00
摘要： Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
摘要翻译： 提高能量存储装置的能量密度的方法包括通过使用原子层沉积工艺将材料沉积到能量存储装置的多孔结构中来增加能量存储装置的电容，通过执行设计成增加到 其中电解质渗透到多孔结构的通道内，或者通过将介电材料放置在多孔结构中。 另一种方法包括退火能量存储装置，以使导电物质扩散到结构的表面并在其上形成导电层。 提高能量密度的另一种方法包括提高击穿电压，另一种方法包括形成假电容器。 增加能量存储装置的可实现的功率输出的方法包括将导电材料沉积到多孔结构中。
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公开(公告)号：US20140185260A1
公开(公告)日：2014-07-03
申请号：US13730324
申请日：2012-12-28
申请人： Zhaohui Chen , Donald S. Gardner , Bum Ki Moon , Charles W. Holzwarth , Cary L. Pint , Scott B. Clendenning
发明人： Zhaohui Chen , Donald S. Gardner , Bum Ki Moon , Charles W. Holzwarth , Cary L. Pint , Scott B. Clendenning
IPC分类号： H05K1/18
CPC分类号： H01G11/24 , G11C13/0002 , G11C13/0016 , H01L28/82 , Y02E60/13 , Y10T29/435
摘要： In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor.
摘要翻译： 在一个实施例中，用于能量存储装置的结构可以包括具有形成在导电层上的导电层和介电层的第一纳米结构化衬底。 第二纳米结构衬底包括另一导电层。 分离器分离第一和第二纳米结构的基底并允许电解质的离子通过分离器。 该结构可以是纳米结构的电解电容器，其中第一纳米结构的衬底形成正电极，第二纳米结构衬底形成电容器的负极。
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15.发明申请公开(公告)号：US20190103229A1
公开(公告)日：2019-04-04
申请号：US15936427
申请日：2018-03-26
申请人： Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Scott B. Clendenning , Eric C. Hannah , Tomm V. Aldridge , John L. Gustafson
发明人： Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Scott B. Clendenning , Eric C. Hannah , Tomm V. Aldridge , John L. Gustafson
摘要： Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
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16.发明授权Carbon nanotube semiconductor devices and deterministic nanofabrication methods 有权碳纳米管半导体器件和确定性纳米制造方法公开(公告)号：US09240552B2
公开(公告)日：2016-01-19
申请号：US13977219
申请日：2011-12-27
CPC分类号： H01L51/0048 , B82B3/0047 , H01L21/845 , H01L27/1211 , H01L51/0002 , H01L51/0558
摘要： Embodiments of the invention provide transistor structures and interconnect structures that employ carbon nanotubes (CNTs). Further embodiments of the invention provide methods of fabricating transistor structures and interconnect structures that employ carbon nanotubes. Deterministic nanofabrication techniques according to embodiments of the invention can provide efficient routes for the large-scale manufacture of transistor and interconnect structures for use, for example, in random logic and memory circuit applications.
摘要翻译： 本发明的实施例提供采用碳纳米管（CNT）的晶体管结构和互连结构。 本发明的其他实施例提供制造使用碳纳米管的晶体管结构和互连结构的方法。 根据本发明的实施例的确定性纳米制造技术可以提供用于大规模制造用于例如随机逻辑和存储器电路应用的晶体管和互连结构的有效途径。
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17.发明授权Energy storage device, method of manufacturing same, and mobile electronic device containing same 有权储能装置及其制造方法以及含有其的移动式电子装置公开(公告)号：US09449765B2
公开(公告)日：2016-09-20
申请号：US13977564
申请日：2012-04-25
IPC分类号： H01G11/02 , H01G11/52 , H01G11/26 , H01G11/30 , G06F1/16 , H01G11/84 , H04M1/02 , H01G9/04 , H01G11/46
CPC分类号： H01G11/02 , G06F1/1635 , H01G9/04 , H01G11/26 , H01G11/30 , H01G11/46 , H01G11/52 , H01G11/54 , H01G11/84 , H04M1/0262 , H04M2001/0204 , Y02E60/13 , Y10T29/49115
摘要： An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.
摘要翻译： 能量存储装置包括第一多孔半导体结构（510），第一多孔半导体结构（510）包括含有第一电解质（514）的第一多个通道（511）和包含第二多个通道（521）的第二多孔半导体结构（520） 第二电解质（524）。 在一个实施例中，能量存储装置还包括在第一和第二多孔半导体结构中的至少一个上的膜（535），该膜包括能够显示可逆电子转移反应的材料。 在另一个实施方案中，第一和第二电解质中的至少一个包含多个金属离子。 在另一个实施方案中，第一和第二电解质一起组成氧化还原体系。
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18.发明授权Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface 有权具有保形金属栅电极和栅极电介质界面的氮掺杂的非平面III-V场效应晶体管公开(公告)号：US08890264B2
公开(公告)日：2014-11-18
申请号：US13627971
申请日：2012-09-26
申请人： Gilbert Dewey , Robert S. Chau , Marko Radosavljevic , Han Wui Then , Scott B. Clendenning , Ravi Pillarisetty
发明人： Gilbert Dewey , Robert S. Chau , Marko Radosavljevic , Han Wui Then , Scott B. Clendenning , Ravi Pillarisetty
CPC分类号： H01L29/66803 , B82Y10/00 , H01L21/2233 , H01L21/228 , H01L21/28264 , H01L29/0665 , H01L29/0673 , H01L29/20 , H01L29/42392 , H01L29/66522 , H01L29/78681 , H01L29/78696
摘要： A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.
摘要翻译： 具有非平面晶体管沟道区域的III-V族半导体表面的高k栅极电介质界面是非定向掺杂氮气的。 在纳米线实施例中，通过将栅极电介质暴露于液体，蒸气，气体，等离子体或固态氮源，在共形栅极电极沉积之前或同时进行高k栅介质界面的非定向氮掺杂 。 在实施例中，栅极电极金属被共形沉积在栅极电介质上，并且执行退火以沿着非平面III-V半导体界面均匀地在栅极电介质内积累氮。
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19.发明申请公开(公告)号：US20140034906A1
公开(公告)日：2014-02-06
申请号：US13977219
申请日：2011-12-27
CPC分类号： H01L51/0048 , B82B3/0047 , H01L21/845 , H01L27/1211 , H01L51/0002 , H01L51/0558
摘要： Embodiments of the invention provide transistor structures and interconnect structures that employ carbon nanotubes (CNTs). Further embodiments of the invention provide methods of fabricating transistor structures and interconnect structures that employ carbon nanotubes. Deterministic nanofabrication techniques according to embodiments of the invention can provide efficient routes for the large-scale manufacture of transistor and interconnect structures for use, for example, in random logic and memory circuit applications.
摘要翻译： 本发明的实施例提供采用碳纳米管（CNT）的晶体管结构和互连结构。 本发明的其他实施例提供制造使用碳纳米管的晶体管结构和互连结构的方法。 根据本发明的实施例的确定性纳米制造技术可以提供用于大规模制造用于例如随机逻辑和存储器电路应用的晶体管和互连结构的有效途径。
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公开(公告)号：US20120070981A1
公开(公告)日：2012-03-22
申请号：US12885097
申请日：2010-09-17
IPC分类号： H01L21/3205
CPC分类号： H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76867 , H01L21/76871 , H01L21/76873 , H01L21/76874
摘要： The present disclosure relates to the field of microelectronic device fabrication and, more particularly, to the formation of copper-containing seed layers for the fabrication of interconnects in integrated circuits. The copper-containing seed layers may be formed in an atomic layer deposition process with a copper pre-cursor and organometallic co-reagent.
摘要翻译： 本公开涉及微电子器件制造领域，更具体地涉及在集成电路中制造互连的含铜种子层的形成。 含铜种子层可以用铜前体和有机金属共试剂在原子层沉积工艺中形成。
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