公开(公告)号：US20070048896A1

公开(公告)日：2007-03-01

申请号：US11214602

申请日：2005-08-30

申请人： Paul Andry ,  Chirag Patel ,  Edmund Sprogis ,  Cornelia Tsang

发明人： Paul Andry ,  Chirag Patel ,  Edmund Sprogis ,  Cornelia Tsang

IPC分类号： H01L21/00

CPC分类号： H01L23/49833 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10T29/49165 ,  H01L2924/014 ,  H01L2224/05552

摘要： Conductive through vias are formed in electronic devices and electronic device carrier, such as, a silicon chip carrier. An annulus cavity is etched into the silicon carrier from the top side of the carrier and the cavity is filled with insulating material to form an isolation collar around a silicon core region. An insulating layer with at least one wiring level, having a portion in contact with the silicon core region, is formed on the top side of the carrier. Silicon is removed from the back side of the carrier sufficient to expose the distal portion of the isolation collar. The core region is etched out to expose the portion of the wiring level in contact with the silicon core region to form an empty via. The via is filled with conductive material in contact with the exposed portion of the wiring level to form a conductive through via to the wiring level. A solder bump formed, for example, from low melt C4 solder, is formed on the conductive via exposed on the carrier back side. The process acts to make the conductive via fill step independent of the via isolation step.

摘要翻译： 导电通孔形成在电子器件和电子器件载体中，例如硅芯片载体。 环状空腔从载体的顶侧蚀刻到硅载体中，并且空腔填充绝缘材料以在硅芯区域周围形成隔离环。 在载体的顶侧上形成具有至少一个布线层的绝缘层，其具有与硅芯区域接触的部分。 将硅从载体的背面移除，足以露出隔离套环的远端部分。 蚀刻芯区域以暴露与硅芯区域接触的布线层的部分以形成空通孔。 通孔填充有与布线层的暴露部分接触的导电材料，以形成导电通孔到布线层。 在载体背侧露出的导电通孔上形成例如由低熔点C4焊料形成的焊料凸块。 该过程用于使导电通孔填充步骤独立于通孔隔离步骤。

公开(公告)号：US20060180924A1

公开(公告)日：2006-08-17

申请号：US11393324

申请日：2006-03-30

申请人： Paul Andry ,  Evan Colgan

发明人： Paul Andry ,  Evan Colgan

IPC分类号： H01L23/34

CPC分类号： H01L23/473 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/15311 ,  H01L2224/0401

摘要： Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

摘要翻译： 提供了用于将微通道冷却模块集成在包括多个高性能IC芯片的高密度电子模块（例如，芯片封装，系统级封装模块等）中的装置和方法。 电子模块被设计成使得高性能（大功率）IC芯片被布置成靠近集成冷却模块（或冷却板）以有效地提取热量。 此外，包括具有多个芯片面的大表面积硅载体的电子模块被设计成使得集成的硅冷却模块刚性地结合到这种芯片的背面以增加硅载体的结构完整性。