Continuous passive motion device having a comfort zone feature
    15.
    发明授权
    Continuous passive motion device having a comfort zone feature 有权
    具有舒适区特征的连续被动运动装置

    公开(公告)号:US06267735B1

    公开(公告)日:2001-07-31

    申请号:US09437173

    申请日:1999-11-09

    IPC分类号: A61H102

    摘要: A therapeutic device may be used in providing physical therapy for a patient's knee by moving the patient's leg through a plurality of cycles of motion in each of a number of treatment sessions. The device includes a “Comfort Zone” range of motion feature which allows an operator to temporarily increase the flexion angle (or decrease the extension angle) to alleviate discomfort the patient is experiencing as the upper leg support and lower leg support pivot or attempt to pivot through a portion of the operational range of motion. The preferred embodiment of the device will automatically decrease the flexion angle (or automatically increase the extension angle) at a predetermined rate over a period of treatment time, so that the device may return to operation between the preset operational limits of the range of motion with a lower chance that the patient will experience the same pain or discomfort which necessitated the establishment of a Comfort Zone limit. In a preferred embodiment of the invention, the carriage holding the patient's leg is decelerated, at a controlled rate over a controlled distance, from the operational speed to zero, as the carriage approaches the extension or flexion limit, and the carriage is accelerated in the same fashion as the carriage moves away from the extension or flexion limit.

    摘要翻译: 治疗装置可以用于通过在多个治疗会话中的每一个中移动患者的腿通过多个运动周期来为患者的膝盖提供物理治疗。 该装置包括“舒适区域”运动特征范围,其允许操作者临时增加屈曲角度(或减小延伸角度),以减轻患者正在经历的不适,因为大腿支撑和小腿支撑枢轴或试图枢转 通过运动范围的一部分。 装置的优选实施例将在治疗时间周期内以预定速率自动降低屈曲角度(或自动增加延伸角度),使得装置可以在运动范围的预设操作极限与 患者将遇到相同的疼痛或不适的机会较低,这需要建立舒适区限制。 在本发明的优选实施例中,当滑架接近延伸或屈曲极限时,保持患者腿部的滑架以受控距离的受控速度从操作速度减速到零,并且滑架在 与支架相同的方式远离扩展或屈曲极限。

    Preparation of sulphonated polyketones
    17.
    发明授权
    Preparation of sulphonated polyketones 失效
    磺化聚酮的制备

    公开(公告)号:US5242998A

    公开(公告)日:1993-09-07

    申请号:US887864

    申请日:1992-05-26

    申请人: Stephen L. Brown

    发明人: Stephen L. Brown

    IPC分类号: C08G67/02

    CPC分类号: C08G67/02

    摘要: Sulphonated polyketones are prepared by reacting a linear alternating copolymer of carbon monoxide and one or more olefins (polyketone) with a sulphonating agent (e.g. chlorosulphoric acid) in a solvent (e.g. dichloromethane) at a temperature in the range -20.degree. to +40.degree. C. A molar excess of sulphonating agent is preferably used. The sulphonated polyketone produced contains one or more types of unit of formula--[COC(R.sup.1).sub.2 C(R.sup.1).sub.2 ]--wherein the R.sup.1 groups are independently H, C.sub.1 to C.sub.10 alkyl or SO.sub.3 H with the proviso that at least one R.sub.1 group is SO.sub.3 H.

    摘要翻译: 通过使一氧化碳和一种或多种烯烃(聚酮)与磺化剂(例如氯代磺酸)的线性交替共聚物在溶剂(例如二氯甲烷)中在-20℃至+ 40℃的温度下反应制备磺化聚酮。 C.优选使用摩尔过量的磺化剂。 所生产的磺化聚酮包含一种或多种式 - [COC(R1)2C(R1)2] - 的单元,其中R1基团独立地为H,C1至C10烷基或SO3H,条件是至少一个R 1基团为 SO3H。

    Process for preparing polyketones
    18.
    发明授权
    Process for preparing polyketones 失效
    聚酮的制备方法

    公开(公告)号:US5026674A

    公开(公告)日:1991-06-25

    申请号:US462233

    申请日:1990-01-08

    IPC分类号: C08G67/00 C08G67/02

    CPC分类号: C08G67/02 Y02P20/584

    摘要: A process for preparing interpolymers of an olefin(s) and carbon monoxide (polyketones) is provided. The process employs a palladium catalyst prepared by reacting together a palladium source, a bidentate amine, phosphine, arsine or stibine and a source of a borate anion. The catalyst effects fast polymerization of the olefin(s) and carbon monoxide in, e.g. methanol or ethoxyethanol solvent. By using the catalyst a lower catalyst deactivation on recycle is observed relative to previously described systems.

    Magnetic tunnel junction with enhanced magnetic switching characteristics
    19.
    发明授权
    Magnetic tunnel junction with enhanced magnetic switching characteristics 有权
    磁隧道结,具有增强的磁性开关特性

    公开(公告)号:US07535069B2

    公开(公告)日:2009-05-19

    申请号:US11452741

    申请日:2006-06-14

    IPC分类号: H01L29/82 G11C11/02

    CPC分类号: G11C11/16

    摘要: A semiconductor device formed between a wordline and a bitline comprises a growth layer, an antiferromagnetic layer formed on the growth layer, a pinned layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, and a free layer formed on the tunnel barrier. The wordline and bitline are arranged substantially orthogonal to one another. The growth layer, in turn, comprises tantalum and has a thickness greater than about 75 Angstroms. Moreover, the pinned layer comprises one or more pinned ferromagnetic sublayers. The tunnel barrier comprises magnesium oxide. Finally, the free layer comprises two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline. The semiconductor device may comprise, for example, a magnetic tunnel junction for use in magnetoresistive random access memory (MRAM) circuitry.

    摘要翻译: 形成在字线和位线之间的半导体器件包括生长层,形成在生长层上的反铁磁层,形成在反铁磁性层上的被钉扎层,形成在钉扎层上的隧道势垒层,以及形成在该引线层上的自由层 隧道屏障。 字线和位线彼此基本正交地布置。 生长层又包括钽,其厚度大于约75埃。 此外,被钉扎层包括一个或多个钉扎铁磁子层。 隧道势垒包括氧化镁。 最后,自由层包括两个或更多个自由铁磁子层,每个自由铁磁子层具有与字线和位线约45度的磁各向异性轴。 半导体器件可以包括例如用于磁阻随机存取存储器(MRAM)电路中的磁性隧道结。

    METHOD FOR COMPOSITION CONTROL OF A METAL COMPOUND FILM
    20.
    发明申请
    METHOD FOR COMPOSITION CONTROL OF A METAL COMPOUND FILM 失效
    金属化合物膜的组成控制方法

    公开(公告)号:US20080249650A1

    公开(公告)日:2008-10-09

    申请号:US11696507

    申请日:2007-04-04

    IPC分类号: G06F19/00 G01N21/00

    摘要: Measurement of the extinction coefficient k is employed for effective and prompt in-line monitoring and/or controlling of the metal film composition. The dependency of the extinction coefficient on the composition of a metal compound is characterized by measuring the extinction coefficients of a series of the metal compound with different compositions. A monitor metal film is then deposited on a wafer. The extinction coefficient k of the film on the wafer is measured and a film compositional parameter is extracted. The wafer processing may continue if k is in specification or the needed compositional change in the film may be extracted from the measured value of the k and the established dependence of k on the composition of the film for out-of-spec k values.

    摘要翻译: 使用消光系数k的测量来有效且迅速地在线监测和/或控制金属膜组合物。 消光系数对金属化合物的组成的依赖性的特征在于测量一系列具有不同组成的金属化合物的消光系数。 然后将监测金属膜沉积在晶片上。 测量晶片上的膜的消光系数k并提取膜组成参数。 如果k在规范中,则可以继续进行晶片处理,或者可以从k的测量值中提取所需的胶片组成变化,并且建立k的关于对于超出规格k值的胶片的组成的依赖性。