Compositions for making organic thin films used in organic electronic devices
    11.
    发明申请
    Compositions for making organic thin films used in organic electronic devices 审中-公开
    用于制造有机电子器件中使用的有机薄膜的组合物

    公开(公告)号:US20060065889A1

    公开(公告)日:2006-03-30

    申请号:US10957142

    申请日:2004-09-30

    CPC classification number: H01L51/0037 H01B1/122 H01L51/0003 H01L51/5088

    Abstract: An organic electronic layer is formed using a monomer dissolved in a solvent such as formic acid. The solution is oxidized with the aid of an oxidizing agent, chosen such that there are no ionic byproducts resulting therefrom. Additives such as polyacids, acids, salts and electrolytes may be added to the solution.

    Abstract translation: 使用溶解在诸如甲酸的溶剂中的单体形成有机电子层。 借助于氧化剂将溶液氧化,选择为不产生由此产生的离子副产物。 可以将添加剂如多酸,酸,盐和电解质加入到溶液中。

    Oled emissive polymer layer
    12.
    发明申请
    Oled emissive polymer layer 审中-公开
    Oled发射聚合物层

    公开(公告)号:US20050069727A1

    公开(公告)日:2005-03-31

    申请号:US10676697

    申请日:2003-09-30

    CPC classification number: H01L51/5012 H01L51/0034

    Abstract: The position of the recombination zone can be controlled by controlling the mobility of the charge carriers. In an embodiment of the invention, the mobility of the charge carriers within the emissive polymer layer is controlled by the addition of traps—either electron traps, hole traps, or electron/hole traps. The electron traps reduce electron mobility, the hole traps reduce hole mobility, and the electron/hole traps reduce both electron mobility and hole mobility. The electron mobility and/or the hole mobility can be altered using the traps so that the recombination zone is positioned in the emissive polymer layer sufficiently far from the cathode so that quenching is minimized, and sufficiently far from the HTL/emissive polymer layer interface so that lifetime and/or efficiency is improved.

    Abstract translation: 可以通过控制电荷载流子的迁移率来控制复合区的位置。 在本发明的一个实施方案中,发射聚合物层内的电荷载流子的迁移率通过添加陷阱(电子陷阱,空穴阱或电子/空穴陷阱)来控制。 电子陷阱降低电子迁移率,空穴陷阱降低空穴迁移率,并且电子/空穴陷阱降低电子迁移率和空穴迁移率。 可以使用陷阱来改变电子迁移率和/或空穴迁移率,使得复合区域位于发射聚合物层中足够远离阴极,使得淬火最小化,并且离HTL /发射聚合物层界面足够远 该寿命和/或效率得到改善。

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