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11.发明授权System for forming SiC crystals having spatially uniform doping impurities 有权用于形成具有空间均匀掺杂杂质的SiC晶体的系统公开(公告)号：US08216369B2
公开(公告)日：2012-07-10
申请号：US12573288
申请日：2009-10-05
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译： 物理蒸汽输送系统包括装有源材料的生长室和间隔开的晶种，以及至少一个具有在其内部和外部之间延伸的至少一个毛细管的胶囊，其中胶囊的内部装有 掺杂剂 每个胶囊安装在生长室中。 通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。
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12.发明申请公开(公告)号：US20080115719A1
公开(公告)日：2008-05-22
申请号：US11904593
申请日：2007-09-27
申请人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback
发明人： Avinash K. Gupta , Edward Semenas , Ilya Zwieback
IPC分类号： C30B25/00
摘要： In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least one compound capable of forming SiO gas in the growth crucible. The growth crucible is heated whereupon the gaseous SiO forms and reacts with carbon in the growth crucible thereby avoiding the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a SiC single crystal.
摘要翻译： 在SiC单晶生长方法中，SiC石墨晶种和多晶SiC源材料与石墨生长坩埚中的至少一种能够在生长坩埚中形成SiO气体的化合物一起间隔地设置。 加热生长坩埚，由此气态SiO形成并与生长坩埚中的碳反应，从而避免在生长坩埚之前和期间将碳引入SiC单晶中，并且SiC源材料蒸发并通过温度梯度传送 生长坩埚至晶种沉淀并形成SiC单晶。
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13.发明申请Method of and system for forming SiC crystals having spatially uniform doping impuritites 有权用于形成具有空间均匀掺杂稀土元素的SiC晶体的方法和系统公开(公告)号：US20060243984A1
公开(公告)日：2006-11-02
申请号：US11405368
申请日：2006-04-17
申请人： Avinash Gupta , Edward Semenas , Ilya Zwieback , Donovan Barrett , Andrew Souzis
发明人： Avinash Gupta , Edward Semenas , Ilya Zwieback , Donovan Barrett , Andrew Souzis
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译： 在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。 至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。 每个胶囊安装在生长室中。 通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。
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公开(公告)号：US20120285370A1
公开(公告)日：2012-11-15
申请号：US13394982
申请日：2010-09-14
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C01B32/956 , C30B23/005
摘要： In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.
摘要翻译： 在SiC升华晶体生长中，坩埚以间隔的关系装载有SiC源材料和SiC晶种，并且在晶种周围的生长坩埚中设置挡板。 生长坩埚中挡板的第一侧限定了SiC单晶在SiC晶种上生长的生长区。 生长坩埚中挡板的第二面限定了SiC籽晶周围的气相捕获阱。 将生长坩埚加热至SiC生长温度，随后，SiC源材料升华并形成蒸气，其通过在SiC晶种上沉淀蒸汽而转移至SiC晶体生长的生长区。 该蒸汽的一部分进入蒸气捕获阱，其中在SiC晶体生长期间将其从生长区移除。
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公开(公告)号：US20120103249A1
公开(公告)日：2012-05-03
申请号：US13255151
申请日：2010-03-25
CPC分类号： C30B29/36 , C30B23/005 , C30B23/06 , C30B23/066
摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
摘要翻译： 物理蒸汽输送生长系统包括装载有SiC源材料的生长室和间隔开的SiC晶种，以及设置在生长室中至少部分透气的外壳。 该包络将生长室分成包括SiC源材料的源室和包括SiC晶种的结晶室。 外壳由在SiC晶种在结晶室中的SiC单晶的升华生长期间产生的蒸汽反应的材料形成，以产生在SiC生长期间作为C的额外来源的C轴承蒸气 单晶在SiC晶种上。
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公开(公告)号：US20110303884A1
公开(公告)日：2011-12-15
申请号：US13217668
申请日：2011-08-25
IPC分类号： H01B1/04
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.
摘要翻译： 升华生长的碳化硅（SiC）单晶棒包括在其升华生长过程中引入到SiC单晶晶锭中的深度掺杂剂，使得在不超过50％连续长度的 所述坯料，所述坯料中心处的深度掺杂剂浓度与所述焦头连续部分中的深度掺杂剂的平均浓度相差不超过25％。
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17.发明申请公开(公告)号：US20100061914A1
公开(公告)日：2010-03-11
申请号：US12522549
申请日：2008-01-15
CPC分类号： C30B29/36 , C30B23/005 , C30B35/00
摘要： In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.
摘要翻译： 在SiC锭的生长中，在坩埚的底部装载有SiC源材料的坩埚和坩埚顶部的SiC晶种的生长坩埚内部设置生长引导件。 生长引导件具有限定生长引导件中的开口的至少一部分的内层和支撑坩埚中的内层的外层。 开口面向源材料，晶种位于与源材料相对的开口端。 内层由具有比形成外层的第二不同材料更高的导热性的第一材料形成。 源材料通过生长引导件中的开口在生长坩埚中的晶种上生长升华，从而在晶种上形成SiC棒。
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18.发明申请SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE 有权SIC单晶体具有降低的偏心密度，由步进周期性刺激技术公开(公告)号：US20100031877A1
公开(公告)日：2010-02-11
申请号：US12441583
申请日：2007-09-27
申请人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
发明人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C30B23/002 , C30B23/005
摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。
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19.发明授权SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique 有权通过逐步周期扰动技术生长的具有降低的位错密度的SiC单晶公开(公告)号：US08871025B2
公开(公告)日：2014-10-28
申请号：US12441583
申请日：2007-09-27
申请人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
发明人： Avinash Gupta , Utpal K. Chakrabarti , Jihong Chen , Edward Semenas , Ping Wu
CPC分类号： C30B29/36 , C30B23/002 , C30B23/005
摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。
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