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    DATA RETENTION OF FERROELECTRIC FILMS BY CONTROLLING FILM COMPOSITION AND STRAIN GRADIENT FOR PROBE-BASED DEVICES
    12.
    发明申请
    DATA RETENTION OF FERROELECTRIC FILMS BY CONTROLLING FILM COMPOSITION AND STRAIN GRADIENT FOR PROBE-BASED DEVICES 有权
    通过控制薄膜组合物和基于探针的器件的应变梯度的数据保留电磁膜

    公开(公告)号：US20100260033A1

    公开(公告)日：2010-10-14

    申请号：US12420717

    申请日：2009-04-08

    申请人： Li Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Li Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： G11B9/02 ,  G11B7/26

    CPC分类号： G11B9/02 ,  G11B9/04

    摘要： For a probe based data storage (PDS) device a ferroelectric film stack may be used as a media to store data bits by polarizing areas of the film as either an up domain or a down domain to represent bits. However a built-in-bias field (BBF) may create domain retention problems. By growing the ferroelectric films with stress and composition gradients this may generate polarization gradients which reduce the bias field. Thus, the retention (or imprint) may be improved with minimized BBF.

    摘要翻译： 对于基于探针的数据存储（PDS）设备，可以使用铁电膜堆叠作为媒体以通过将胶片的区域偏置为向上域或向下域来表示位来存储数据位。 然而，内置偏置字段（BBF）可能会创建域保留问题。 通过生长具有应力和成分梯度的铁电薄膜，这可能产生减小偏压场的偏振梯度。 因此，可以通过最小化BBF来改善保留（或印记）。

    Miniature chemical analysis system
    13.
    发明授权
    Miniature chemical analysis system 有权
    微型化学分析系统

    公开(公告)号：US07695681B2

    公开(公告)日：2010-04-13

    申请号：US11096814

    申请日：2005-03-31

    申请人： Li-Peng Wang ,  Qing Ma

    发明人： Li-Peng Wang ,  Qing Ma

    IPC分类号： G01N29/34 ,  G01N29/14

    CPC分类号： G01N30/6095 ,  B82Y15/00 ,  B82Y30/00 ,  G01N29/022 ,  G01N29/036 ,  G01N2030/025 ,  G01N2291/0224 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  Y10T29/49117

    摘要： An apparatus, according to one aspect, may include a chromatograph and a bulk acoustic resonator. The chromatograph may include a channel that is defined at least partially in a monolithic substrate. The channel may have an inlet to receive a sample and an outlet. A chromatography material may be included in the channel. The bulk acoustic resonator may have a first electrode and a second electrode that has a chemically functionalized surface. The chemically functionalized surface may be included in a chamber that is defined at least partially in the monolithic substrate and that is coupled with the outlet of the channel. Methods of making and using such apparatus, and systems including such apparatus, are also disclosed.

    摘要翻译： 根据一个方面的装置可以包括色谱仪和体声波谐振器。 色谱仪可以包括至少部分地限定在整体式衬底中的通道。 通道可以具有用于接收样品和出口的入口。 色谱材料可以包括在通道中。 体声波谐振器可以具有第一电极和具有化学官能化表面的第二电极。 化学官能化的表面可以包括在至少部分地限定在整体式衬底中并且与通道的出口耦合的室中。 还公开了制造和使用这种装置的方法，以及包括这种装置的系统。

    Frequency tuning of film bulk acoustic resonators (FBAR)
    15.
    发明申请
    Frequency tuning of film bulk acoustic resonators (FBAR) 审中-公开
    薄膜体声共振器（FBAR）的频率调谐

    公开(公告)号：US20070139140A1

    公开(公告)日：2007-06-21

    申请号：US11314361

    申请日：2005-12-20

    申请人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    发明人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    IPC分类号： H03H9/58

    CPC分类号： H03H3/04 ,  H03H3/0076 ,  H03H2003/0428 ,  H03H2003/0478

    摘要： Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

    摘要翻译： 多个FBAR可以在单个晶片上制造并且稍后被切割。 理想地，形成在晶片中的所有器件将具有相同的谐振频率。 然而，由于制造方差，FBAR器件的频率响应可能会在晶圆上略有不同。 可以创建RF映射以确定晶片上的区域，其中该区域中的FBAR全部从目标频率变化相似程度。 调谐层可以沉积在晶片上。 可以使用基于由RF映射表示的区域的调谐层的光刻图案特征来将FBAR校正到目标谐振频率，同时FBAR在晶片上仍然完整。

    Microelectromechanical (MEMS) switching apparatus
    19.
    发明授权
    Microelectromechanical (MEMS) switching apparatus 有权
    微机电（MEMS）开关装置

    公开(公告)号：US06686820B1

    公开(公告)日：2004-02-03

    申请号：US10194096

    申请日：2002-07-11

    申请人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    发明人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    IPC分类号： H01P110

    CPC分类号： H01H59/0009 ,  H01H2001/0078 ,  H01H2059/0036

    摘要： This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

    摘要翻译： 本申请公开了一种微机电（MEMS）开关设备，其包括附接到基板的锚固件和附接到锚固件并与其接触的导电梁。 所述梁包括具有近端和远端的锥形部分，所述近端附接到所述锚固件，附接到所述锥形部分的远端的致动部分，附接到所述致动部分的尖端，所述尖端具有触点 在其上的凹坑。 开关装置还包括附接到基板并位于致动部分和基板之间的致动电极。 还描述和要求保护附加实施例。