公开(公告)号：US10403234B2

公开(公告)日：2019-09-03

申请号：US15987144

申请日：2018-05-23

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G5/10 ,  H01L27/12 ,  H01L27/32 ,  G09G3/20

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

公开(公告)号：US11908945B2

公开(公告)日：2024-02-20

申请号：US15759698

申请日：2016-09-09

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/861 ,  H01L29/24 ,  H01L29/51

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02628 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78618 ,  H01L21/02581 ,  H01L29/24 ,  H01L29/861

摘要： A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.

公开(公告)号：US11271085B2

公开(公告)日：2022-03-08

申请号：US16029301

申请日：2018-07-06

申请人： RICOH COMPANY, LTD.

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/788 ,  H01L27/12 ,  H01L29/417 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/36 ,  H01L27/108 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/163

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US20150028334A1

公开(公告)日：2015-01-29

申请号：US14382604

申请日：2013-03-14

申请人： RICOH COMPANY, LTD.

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/786 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/445 ,  H01L23/5328 ,  H01L27/1292 ,  H01L29/45 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

摘要翻译： 提供导电薄膜，其包含：含有铟和锡的金属氧化物; 和黄金。

公开(公告)号：US11876137B2

公开(公告)日：2024-01-16

申请号：US16682898

申请日：2019-11-13

申请人： RICOH COMPANY, LTD.

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： C09D1/00 ,  C09D7/61 ,  H01L27/12 ,  G09G3/34 ,  G09G3/30 ,  G09G3/36 ,  G09G3/38 ,  H01L29/786

CPC分类号： H01L29/78606 ,  C09D1/00 ,  C09D7/61 ,  G09G3/30 ,  G09G3/344 ,  G09G3/348 ,  G09G3/3696 ,  G09G3/38 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/7869 ,  G09G2300/0426

摘要： To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

公开(公告)号：US11374054B2

公开(公告)日：2022-06-28

申请号：US16981933

申请日：2019-03-13

申请人： RICOH COMPANY, LTD.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

IPC分类号： H01L27/15 ,  G09G3/32 ,  H01L33/18 ,  H01L33/26 ,  H05B33/14 ,  H01L27/12

摘要： An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.

公开(公告)号：US10269293B2

公开(公告)日：2019-04-23

申请号：US15289243

申请日：2016-10-10

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  G09G3/34 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/12 ,  G09G3/36

摘要： A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.