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11.发明授权Poly-o-hydroxyamide, polybenzoxazole from the poly-o-hydroxyamide, electronic component including a polybenzoxazole, and processes for producing the same 有权聚邻羟基酰胺，聚邻羟基酰胺的聚苯并恶唑，包括聚苯并恶唑的电子部件及其制造方法公开(公告)号：US07244803B2
公开(公告)日：2007-07-17
申请号：US10609453
申请日：2003-06-27
申请人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
发明人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
CPC分类号： C08G69/265 , C08G69/26 , C08G69/32 , C08G73/22 , Y10T428/31504 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k≦2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.
摘要翻译： 用于铝和铜金属化的电介质在高温下是稳定的。 令人惊奇的是，尽管在环化过程中消除了水，但聚合物电介质非常适用于填充窄沟槽。 填充的沟槽没有表现出缺陷和气泡或裂缝。 聚苯并恶唑的介电常数k <= 2.7，适合作为电绝缘体。 此外，这些材料在与微电子相关的所有表面上都很好地粘附。
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12.发明授权POLY-O-HYDROXYAMIDES, POLYBENZOXAZOLES, PROCESSES FOR PRODUCING POLY-O-HYDROXYAMIDES, PROCESSES FOR PRODUCING POLYBENZOXAZOLES, DIELECTRICS INCLUDING A POLYBENZOXAZOLE, ELECTRONIC COMPONENTS INCLUDING THE DIELECTRICS, AND PROCESSES FOR MANUFACTURING THE ELECTRONIC COMPONENTS 失效聚-O-羟基酰胺，聚苯并恶唑，聚-O-羟基胺的制备方法，制备聚苯并噻唑的方法，包括聚苯并噻唑的电介质，包括电介质的电子组分，以及制造电子组件的方法公开(公告)号：US06900284B2
公开(公告)日：2005-05-31
申请号：US10261034
申请日：2002-09-30
申请人： Klaus Lowack , Anna Maltenberger , Recai Sezi , Andreas Walter
发明人： Klaus Lowack , Anna Maltenberger , Recai Sezi , Andreas Walter
IPC分类号： C08G73/00 , C08G73/10 , C09D5/25 , H01B3/30 , H01L21/312 , H01L23/532 , C08G73/22 , C08G69/00
CPC分类号： H01L21/02118 , C08G73/00 , C08G73/10 , H01B3/305 , H01L21/02282 , H01L21/312 , H01L23/5329 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.
摘要翻译： 环氧化聚邻羟基酰胺得到聚苯并恶唑。 聚邻羟基酰胺提供有效填充沟槽。 特别地，聚邻羟基酰胺可以填充宽度小于100nm，纵横比大于4的沟槽。此外，本发明的聚苯并恶唑非常适用于镶嵌工艺。 电介质可以由聚苯并恶唑制成。 反过来，半导体器件可以包括消毒的。 包括制备聚邻羟基酰胺，聚苯并恶唑和半导体器件的方法。
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13.发明申请Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing ploybenzoxazoles, and processes for producing an electronic component 审中-公开用于生产电介质的电介质，具有自发孔的电介质，用于多孔电介质的单体，用于制备聚邻羟基酰胺的方法，制备合成苯并恶唑的方法，以及用于制备电子部件的方法公开(公告)号：US20060214139A1
公开(公告)日：2006-09-28
申请号：US11439455
申请日：2006-05-23
申请人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
发明人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
CPC分类号： H01L21/02118 , C08G69/26 , C08G69/44 , C08G73/22 , H01L21/02203 , H01L21/02205 , H01L21/02282 , H01L21/02304 , H01L21/312 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/3011 , H05K1/0346 , H01L2924/00
摘要： Poly-o-hydroxyamides include binaphthyl substituents as repeating units. The poly-o-hydroxyamides can be cyclized to give the polybenzoxazole by heating. Pore formation occurs, so that a dielectric having a very low dielectric constant k of less than 2.5 is obtained.
摘要翻译： 聚邻羟基酰胺包括作为重复单元的联萘基取代基。 可以将聚邻羟基酰胺环化，通过加热得到聚苯并恶唑。 发生孔形成，从而获得具有小于2.5的非常低的介电常数k的电介质。
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公开(公告)号：US06861560B2
公开(公告)日：2005-03-01
申请号：US10609456
申请日：2003-06-27
申请人： Andreas Walter , Ingo Gnüchtel , Anna Maltenberger , Recai Sezi , Horst Hartmann
发明人： Andreas Walter , Ingo Gnüchtel , Anna Maltenberger , Recai Sezi , Horst Hartmann
IPC分类号： C07C215/82 , C07B61/00 , C07C213/02 , C07C215/80 , C07C217/90 , C07C211/54 , C07C211/55
CPC分类号： C07C217/90 , C07C215/80 , C07C2603/24
摘要： A bis-o-aminophenol has a formula I These bis-o-aminophenols permit the preparation of polybenzoxazoles stabilized at high temperatures. The bis-o-aminophenols are preferably prepared from the corresponding diols, which are first nitrosated. The nitroso compound is then reduced to the amino compound by hydrogenation with Pd/C and H2.
摘要翻译： 双邻氨基苯酚具有配方。这种双邻氨基苯酚允许制备在高温下稳定的聚苯并恶唑。 双邻氨基苯酚优选由相应的二醇制备，其首先被亚硝化。 然后通过用Pd / C和H 2氢化将亚硝基化合物还原成氨基化合物。
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15.发明授权POLY-O-HYDROXAMIDE, POLYBENZOXAZOLE, AND ELECTRONIC COMPONENT INCLUDING A DIELECTRIC HAVING A BARRIER EFFECT AGAINST COPPER DIFFUSION, AND PROCESSES FOR PREPARING POLY-O-HYDROXYAMIDES, POLYBENZOXAZOLES, AND ELECTRONIC COMPONENTS 失效聚环氧乙烷，聚苯并噻唑和电子成分，其中包括具有对铜扩散的阻挡效应的电介质，以及制备聚-O-羟基酰胺，聚苯并恶唑和电子组分的方法公开(公告)号：US06806344B2
公开(公告)日：2004-10-19
申请号：US10609460
申请日：2003-06-27
申请人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack
发明人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack
IPC分类号： C08G7322
CPC分类号： C08G73/22 , C08G69/26 , C08G69/265 , C08G69/32 , H01B3/441 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/76801
摘要： Novel poly-o-hydroxyamides can be cyclized to give polybenzoxazoles which have a good diffusion barrier effect with respect to metals. The poly-o-hydroxyamides can be applied to a semiconductor substrate by customary techniques and converted into the polybenzoxazole in a simple manner by heating. This results in a good barrier layer with respect to diffusion of metals. This allows the diffusion barrier between conductor track and dielectric to be substantially dispensed.
摘要翻译： 可以使新的聚邻羟基酰胺环化，得到相对于金属具有良好扩散阻挡作用的聚苯并恶唑。 聚邻羟基酰胺可以通过常规技术应用于半导体衬底，并通过加热以简单的方式转化成聚苯并恶唑。 这导致相对于金属扩散的良好的阻挡层。 这允许基本上分配导体轨道和电介质之间的扩散阻挡层。
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16.发明申请公开(公告)号：US20100213824A1
公开(公告)日：2010-08-26
申请号：US12601520
申请日：2008-05-20
IPC分类号： H01J1/62 , C07F15/00 , C07D257/08
CPC分类号： H01L51/0085 , C07F15/0033 , C09B55/009 , C09B57/00 , C09B57/007 , C09B57/10 , C09K11/06 , C09K2211/1007 , C09K2211/1022 , C09K2211/1029 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , C09K2211/185 , H01L51/0084 , H01L51/0086 , H01L51/0087 , H01L51/5016
摘要： A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex.
摘要翻译： 提供了一种磷光金属络合物，其包含金属中心原子M和至少一个由金属中心原子M配位的配体，其中一个金属中心原子M和配体形成六元金属环。 另外指定的是包含金属络合物的辐射发射组分和制备金属络合物的方法。
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17.发明授权公开(公告)号：US08734962B2
公开(公告)日：2014-05-27
申请号：US12601520
申请日：2008-05-20
CPC分类号： H01L51/0085 , C07F15/0033 , C09B55/009 , C09B57/00 , C09B57/007 , C09B57/10 , C09K11/06 , C09K2211/1007 , C09K2211/1022 , C09K2211/1029 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , C09K2211/185 , H01L51/0084 , H01L51/0086 , H01L51/0087 , H01L51/5016
摘要： A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex.
摘要翻译： 提供了一种磷光金属络合物，其包含金属中心原子M和至少一个由金属中心原子M配位的配体，其中一个金属中心原子M和配体形成六元金属环。 另外指定的是包含金属络合物的辐射发射组分和制备金属络合物的方法。
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公开(公告)号：US20120146006A1
公开(公告)日：2012-06-14
申请号：US13321762
申请日：2010-05-05
申请人： David Hartmann , Sabine Herder , Anna Maltenberger , Wiebke Sarfert , Günter Schmid , Riikka Suhonen
发明人： David Hartmann , Sabine Herder , Anna Maltenberger , Wiebke Sarfert , Günter Schmid , Riikka Suhonen
CPC分类号： H01L51/002 , H01L51/0003 , H01L51/0026 , H01L51/0036 , H01L51/0037 , H01L51/004 , H01L51/5052
摘要： A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.
摘要翻译： 用于空穴传输层的材料具有p-掺杂剂。 掺杂剂与空穴传输材料形成电荷转移络合物。 用溶液中的空穴传输基质材料处理溶液中的金属组分以形成空穴传输层。
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公开(公告)号：US08610113B2
公开(公告)日：2013-12-17
申请号：US13321762
申请日：2010-05-05
申请人： David Hartmann , Sabine Szyszkowski , Anna Maltenberger , Wiebke Sarfert , Günter Schmid , Riikka Suhonen
发明人： David Hartmann , Sabine Szyszkowski , Anna Maltenberger , Wiebke Sarfert , Günter Schmid , Riikka Suhonen
CPC分类号： H01L51/002 , H01L51/0003 , H01L51/0026 , H01L51/0036 , H01L51/0037 , H01L51/004 , H01L51/5052
摘要： A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.
摘要翻译： 用于空穴传输层的材料具有p-掺杂剂。 掺杂剂与空穴传输材料形成电荷转移络合物。 用溶液中的空穴传输基质材料处理溶液中的金属组分以形成空穴传输层。
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20.发明授权公开(公告)号：US09263696B2
公开(公告)日：2016-02-16
申请号：US13982053
申请日：2012-01-05
CPC分类号： H01L51/5064 , H01L51/0003 , H01L51/0008 , H01L51/002 , H01L51/0051 , H01L51/006 , H01L51/5052 , H01L51/5088 , H01L51/5096 , H01L51/56
摘要： An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.
摘要翻译： 具有p型掺杂超级酸盐的空穴导体层的有机半导体组件极大地改善了电荷传输和光学性质。 除了在非常低的掺杂浓度下增加比电导率之外，掺杂对于人眼的层的颜色印象基本上没有负的变化。 作为p型掺杂超强酸盐的结果，空穴导体层的吸光度在可见光波长范围内不增加。 从溶液和气相沉积是可能的。
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