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1.发明授权Poly-o-hydroxyamide, polybenzoxazole from the poly-o-hydroxyamide, electronic component including a polybenzoxazole, and processes for producing the same 有权聚邻羟基酰胺，聚邻羟基酰胺的聚苯并恶唑，包括聚苯并恶唑的电子部件及其制造方法公开(公告)号：US07244803B2
公开(公告)日：2007-07-17
申请号：US10609453
申请日：2003-06-27
申请人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
发明人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
CPC分类号： C08G69/265 , C08G69/26 , C08G69/32 , C08G73/22 , Y10T428/31504 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k≦2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.
摘要翻译： 用于铝和铜金属化的电介质在高温下是稳定的。 令人惊奇的是，尽管在环化过程中消除了水，但聚合物电介质非常适用于填充窄沟槽。 填充的沟槽没有表现出缺陷和气泡或裂缝。 聚苯并恶唑的介电常数k <= 2.7，适合作为电绝缘体。 此外，这些材料在与微电子相关的所有表面上都很好地粘附。
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2.发明授权Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing polybenzoxazoles, and processes for producing an electronic component 有权用于生产电介质的电介质，具有自发孔的电介质，用于多孔电介质的单体，制备聚邻羟基酰胺的方法，制备聚苯并恶唑的方法，以及用于制备电子部件的方法公开(公告)号：US07108807B2
公开(公告)日：2006-09-19
申请号：US10424376
申请日：2003-04-28
申请人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
发明人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
CPC分类号： H01L21/02118 , C08G69/26 , C08G69/44 , C08G73/22 , H01L21/02203 , H01L21/02282 , H01L21/02304 , H01L21/312 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/3011 , H05K1/0346 , H01L2924/00
摘要： Poly-o-hydroxyamides include binaphthyl substituents as repeating units. The poly-o-hydroxyamides can be cyclized to give the polybenzoxazole by heating. Pore formation occurs, so that a dielectric having a very low dielectric constant k of less than 2.5 is obtained.
摘要翻译： 聚邻羟基酰胺包括作为重复单元的联萘基取代基。 可以将聚邻羟基酰胺环化，通过加热得到聚苯并恶唑。 发生孔形成，从而获得具有小于2.5的非常低的介电常数k的电介质。
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3.发明授权POLY-O-HYDROXYAMIDES, POLYBENZOXAZOLES, PROCESSES FOR PRODUCING POLY-O-HYDROXYAMIDES, PROCESSES FOR PRODUCING POLYBENZOXAZOLES, DIELECTRICS INCLUDING A POLYBENZOXAZOLE, ELECTRONIC COMPONENTS INCLUDING THE DIELECTRICS, AND PROCESSES FOR MANUFACTURING THE ELECTRONIC COMPONENTS 失效聚-O-羟基酰胺，聚苯并恶唑，聚-O-羟基胺的制备方法，制备聚苯并噻唑的方法，包括聚苯并噻唑的电介质，包括电介质的电子组分，以及制造电子组件的方法公开(公告)号：US06900284B2
公开(公告)日：2005-05-31
申请号：US10261034
申请日：2002-09-30
申请人： Klaus Lowack , Anna Maltenberger , Recai Sezi , Andreas Walter
发明人： Klaus Lowack , Anna Maltenberger , Recai Sezi , Andreas Walter
IPC分类号： C08G73/00 , C08G73/10 , C09D5/25 , H01B3/30 , H01L21/312 , H01L23/532 , C08G73/22 , C08G69/00
CPC分类号： H01L21/02118 , C08G73/00 , C08G73/10 , H01B3/305 , H01L21/02282 , H01L21/312 , H01L23/5329 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.
摘要翻译： 环氧化聚邻羟基酰胺得到聚苯并恶唑。 聚邻羟基酰胺提供有效填充沟槽。 特别地，聚邻羟基酰胺可以填充宽度小于100nm，纵横比大于4的沟槽。此外，本发明的聚苯并恶唑非常适用于镶嵌工艺。 电介质可以由聚苯并恶唑制成。 反过来，半导体器件可以包括消毒的。 包括制备聚邻羟基酰胺，聚苯并恶唑和半导体器件的方法。
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4.发明申请Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing ploybenzoxazoles, and processes for producing an electronic component 审中-公开用于生产电介质的电介质，具有自发孔的电介质，用于多孔电介质的单体，用于制备聚邻羟基酰胺的方法，制备合成苯并恶唑的方法，以及用于制备电子部件的方法公开(公告)号：US20060214139A1
公开(公告)日：2006-09-28
申请号：US11439455
申请日：2006-05-23
申请人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
发明人： Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
CPC分类号： H01L21/02118 , C08G69/26 , C08G69/44 , C08G73/22 , H01L21/02203 , H01L21/02205 , H01L21/02282 , H01L21/02304 , H01L21/312 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/3011 , H05K1/0346 , H01L2924/00
摘要： Poly-o-hydroxyamides include binaphthyl substituents as repeating units. The poly-o-hydroxyamides can be cyclized to give the polybenzoxazole by heating. Pore formation occurs, so that a dielectric having a very low dielectric constant k of less than 2.5 is obtained.
摘要翻译： 聚邻羟基酰胺包括作为重复单元的联萘基取代基。 可以将聚邻羟基酰胺环化，通过加热得到聚苯并恶唑。 发生孔形成，从而获得具有小于2.5的非常低的介电常数k的电介质。
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5.发明授权POLY-O-HYDROXAMIDE, POLYBENZOXAZOLE, AND ELECTRONIC COMPONENT INCLUDING A DIELECTRIC HAVING A BARRIER EFFECT AGAINST COPPER DIFFUSION, AND PROCESSES FOR PREPARING POLY-O-HYDROXYAMIDES, POLYBENZOXAZOLES, AND ELECTRONIC COMPONENTS 失效聚环氧乙烷，聚苯并噻唑和电子成分，其中包括具有对铜扩散的阻挡效应的电介质，以及制备聚-O-羟基酰胺，聚苯并恶唑和电子组分的方法公开(公告)号：US06806344B2
公开(公告)日：2004-10-19
申请号：US10609460
申请日：2003-06-27
申请人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack
发明人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack
IPC分类号： C08G7322
CPC分类号： C08G73/22 , C08G69/26 , C08G69/265 , C08G69/32 , H01B3/441 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/76801
摘要： Novel poly-o-hydroxyamides can be cyclized to give polybenzoxazoles which have a good diffusion barrier effect with respect to metals. The poly-o-hydroxyamides can be applied to a semiconductor substrate by customary techniques and converted into the polybenzoxazole in a simple manner by heating. This results in a good barrier layer with respect to diffusion of metals. This allows the diffusion barrier between conductor track and dielectric to be substantially dispensed.
摘要翻译： 可以使新的聚邻羟基酰胺环化，得到相对于金属具有良好扩散阻挡作用的聚苯并恶唑。 聚邻羟基酰胺可以通过常规技术应用于半导体衬底，并通过加热以简单的方式转化成聚苯并恶唑。 这导致相对于金属扩散的良好的阻挡层。 这允许基本上分配导体轨道和电介质之间的扩散阻挡层。
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公开(公告)号：US07064176B2
公开(公告)日：2006-06-20
申请号：US10472772
申请日：2002-03-28
申请人： Marcus Halik , Klaus Lowack , Recai Sezi , Andreas Walter
发明人： Marcus Halik , Klaus Lowack , Recai Sezi , Andreas Walter
CPC分类号： H01B3/305 , C08G69/26 , C08G69/265 , C08G69/32 , C08G73/22
摘要： The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.
摘要翻译： 本发明涉及新颖的聚羟基酰胺化合物，其以其恶唑的形式，适合作为涂料，特别是电子组件。 本发明还涉及这些新化合物的制备方法及其用途。
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公开(公告)号：US07476412B2
公开(公告)日：2009-01-13
申请号：US09817963
申请日：2001-03-27
申请人： Klaus Lowack , Günter Schmid , Recai Sezi
发明人： Klaus Lowack , Günter Schmid , Recai Sezi
CPC分类号： C23C18/30 , C23C18/1608 , H05K3/184 , H05K3/465 , H05K3/4661
摘要： The invention relates to a process for the metallization of an insulator and/or a dielectric, wherein the insulator is firstly activated, it is subsequently coated with another insulator and the latter is patterned, then the first is seeded and lastly metallized.
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公开(公告)号：US07028399B2
公开(公告)日：2006-04-18
申请号：US10145393
申请日：2002-05-14
申请人： Klaus Lowack , Guenter Schmid , Recai Sezi , Ute Zschieschang
发明人： Klaus Lowack , Guenter Schmid , Recai Sezi , Ute Zschieschang
IPC分类号： H05K3/02
CPC分类号： B82Y30/00 , H01L21/4846 , H05K3/0052 , H05K3/182 , H05K3/242 , H05K2203/175 , Y10T29/49128 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： The present invention provides a process for wiring electrical contact sites, in particular on the surface of an electronic or microelectronic component, with the following steps: applying and patterning at least one dielectric on the component surface; currentlessly depositing a conductor starting layer for producing metal wiring interconnects and substitute contact sites with short-circuit contacts for interconnecting the individual metal wiring interconnects and the corresponding electrical contact sites; reinforcing the conductor starting layer by a common electrodepositing process; and separating the short-circuit contacts for separating the electrical contact sites or the contact sites of the wiring from one another.
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9.发明授权Component having at least two mutually adjacent insulating layers and corresponding production method 失效具有至少两个相互相邻的绝缘层的组分和相应的制备方法公开(公告)号：US06905726B2
公开(公告)日：2005-06-14
申请号：US09817967
申请日：2001-03-27
申请人： Klaus Lowack , Günter Schmid , Recai Sezi
发明人： Klaus Lowack , Günter Schmid , Recai Sezi
IPC分类号： C23C26/00 , C23C28/00 , H01L21/768 , H01L23/498 , H01L23/532 , B05D3/04
CPC分类号： H01L21/76871 , C23C26/00 , C23C28/00 , H01L21/76826 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , Y10T428/24942 , H01L2924/00
摘要： The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.
摘要翻译： 本发明涉及一种具有两个相邻绝缘层的部件及其制造方法。 该组件具有激活的绝缘层，其可以通过金属化转换成导电层。
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公开(公告)号：US06635410B2
公开(公告)日：2003-10-21
申请号：US10156484
申请日：2002-05-28
申请人： Joerg Haussmann , Klaus Lowack , Wolfgang Radlik , Guenter Schmid , Recai Sezi
发明人： Joerg Haussmann , Klaus Lowack , Wolfgang Radlik , Guenter Schmid , Recai Sezi
IPC分类号： G03F700
CPC分类号： H05K3/185 , C23C18/1605 , H05K2203/0525
摘要： A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.
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