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    Chalcogenide devices exhibiting stable operation from the as-fabricated state
    13.
    发明授权
    Chalcogenide devices exhibiting stable operation from the as-fabricated state 有权
    表现出从制造状态稳定运行的硫族化物装置

    公开(公告)号：US07786462B2

    公开(公告)日：2010-08-31

    申请号：US11975615

    申请日：2007-10-19

    申请人： Sergey A. Kostylev ,  Tyler Lowrey ,  Guy Wicker ,  Wolodymyr Czubatyj

    发明人： Sergey A. Kostylev ,  Tyler Lowrey ,  Guy Wicker ,  Wolodymyr Czubatyj

    IPC分类号： H01L29/02 ,  H01L29/06 ,  G11C11/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

    摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.

    摘要翻译： 一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。 硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5硫族化物组合物是稀的。 包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前 最终使用操作。 改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。 展示了10年数据保存温度的显着改进。 通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

    Memory Device
    18.
    发明申请
    Memory Device 有权
    存储设备

    公开(公告)号：US20090225588A1

    公开(公告)日：2009-09-10

    申请号：US12044407

    申请日：2008-03-07

    申请人： Wolodymyr Czubatyj ,  Regino Sandoval

    发明人： Wolodymyr Czubatyj ,  Regino Sandoval

    IPC分类号： G11C11/00 ,  H01L21/06

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

    摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

    摘要翻译： 相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极 交换材料 当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。

    Memory Device
    20.
    发明申请
    Memory Device 有权
    存储设备

    公开(公告)号：US20120329237A1

    公开(公告)日：2012-12-27

    申请号：US13590085

    申请日：2012-08-20

    申请人： Wolodymyr Czubatyj ,  Regino Sandoval

    发明人： Wolodymyr Czubatyj ,  Regino Sandoval

    IPC分类号： H01L21/8239

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

    摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.

    摘要翻译： 相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极 交换材料 当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。