公开(公告)号：US20160122574A1

公开(公告)日：2016-05-05

申请号：US14927357

申请日：2015-10-29

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Choong-Bong LEE ,  Stefan J. CAPORALE ,  Jason A. DeSISTO ,  Jong Keun PARK ,  Cong LIU ,  Cheng-Bai XU ,  Cecily ANDES

IPC: C09D133/12 ,  C09D139/04 ,  C09D133/26 ,  G03F7/11

CPC classification number: G03F7/11 ,  C09D4/06 ,  C09D133/06 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/2041 ,  C08F220/18

Abstract: Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

Abstract translation: 提供光刻胶外涂层组合物。 组合物包括：基质聚合物，添加剂聚合物，碱性猝灭剂和有机溶剂。 添加剂聚合物具有比基体聚合物的表面能更低的表面能，并且添加剂聚合物以基于外涂层组合物的总固体的1至20重量％的量存在于外涂层组合物中。 该组合物在用于负色调发展方法的半导体制造业中具有特别的适用性。

公开(公告)号：US20140186772A1

公开(公告)日：2014-07-03

申请号：US14145207

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Gerhard POHLERS ,  Cheng-Bai XU ,  Kevin ROWELL

IPC: G03F7/40

CPC classification number: G03F7/405 ,  G03F7/0397

Abstract: Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括：（a）提供半导体衬底; （b）在所述基底上形成光致抗蚀剂图案，其中所述光致抗蚀剂图案由化学放大的光致抗蚀剂组合物形成，所述光致抗蚀剂图案包含：包含酸不稳定基团的基质聚合物; 光致酸发生器; 和溶剂; （c）在光致抗蚀剂图案上在基底上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包含：基体聚合物，不含氟的芳族酸; 和溶剂; （d）加热涂覆的基材，从而在光致抗蚀剂图案的表面区域中引起光致抗蚀剂基质聚合物的极性变化; 和（e）使光致抗蚀剂图案与漂洗剂接触以除去光致抗蚀剂图案的表面区域，从而形成修整的光致抗蚀剂图案。 该方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20130344439A1

公开(公告)日：2013-12-26

申请号：US13926764

申请日：2013-06-25

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong LIU ,  Chunyi WU ,  Gerhard POHLERS ,  Gregory P. PROKOPOWICZ ,  Mingqi LI ,  Cheng-Bai XU

IPC: G03F7/004

Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer

Abstract translation: 提供了新的光致抗蚀剂组合物，其包含包含酰胺基和多个羟基的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 和具有多个羟基的酰胺组分，其可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光生酸扩散的作用

公开(公告)号：US20130171825A1

公开(公告)日：2013-07-04

申请号：US13731886

申请日：2012-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cheng-Bai XU

IPC: H01L21/308

CPC classification number: H01L21/0273 ,  G03F7/0392 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/308

Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Abstract translation: 提供了修整光致抗蚀剂图案的方法。 所述方法包括在光致抗蚀剂图案上涂覆光致抗蚀剂修饰组合物，其中修剪组合物包括基质聚合物，热酸产生剂和溶剂，修剪组合物不含交联剂。 加热涂覆的半导体衬底以在热修复组合物中产生酸，从而导致光致抗蚀剂图案的表面区域中的基质聚合物的极性的变化。 光致抗蚀剂图案与显影液接触以除去光刻胶图案的表面区域。 该方法在半导体器件的制造中特别适用于形成非常细的光刻特征。

公开(公告)号：US20160130462A1

公开(公告)日：2016-05-12

申请号：US14929533

申请日：2015-11-02

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong LIU ,  Doris H. KANG ,  Deyan WANG ,  Cheng-Bai XU ,  Mingqi LI

IPC: C09D133/16 ,  G03F7/11 ,  G03F7/20

CPC classification number: C09D133/16 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041

Abstract: A topcoat composition comprises: a matrix polymer; a surface active polymer comprising: a first unit comprising a group of the following general formula (I): wherein R1 represents H, F, C1 to C8 alkyl or C1 to C8 fluoroalkyl, optionally comprising one or more heteroatom; X1 represents oxygen, sulfur or NR2, wherein R2 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and a solvent. The surface active polymer is present in the composition in an amount less than the matrix polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract translation: 面漆组合物包括：基质聚合物; 一种表面活性聚合物，其包含：包含以下通式（I）的基团的第一单元：其中R 1表示H，F，C 1至C 8烷基或C 1至C 8氟代烷基，任选地包含一个或多个杂原子; X 1表示氧，硫或NR 2，其中R 2选自氢和任选取代的C 1至C 10烷基; 和溶剂。 表面活性聚合物以小于基质聚合物的量存在于组合物中，并且表面活性聚合物具有比基质聚合物的表面能更低的表面能。 本发明在半导体器件的制造中作为光致抗蚀剂顶涂层的光刻工艺具有特别的适用性。

公开(公告)号：US20160048077A1

公开(公告)日：2016-02-18

申请号：US14925147

申请日：2015-10-28

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Shintaro YAMADA ,  Deyan WANG ,  Sabrina WONG ,  Cong LIU ,  Cheng-Bai XU

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/16

CPC classification number: G03F7/091 ,  C08G79/00 ,  C08K5/0091 ,  C08K5/56 ,  C09B57/10 ,  C09B69/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0332

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

公开(公告)号：US20160005641A1

公开(公告)日：2016-01-07

申请号：US14755471

申请日：2015-06-30

Applicant: Rohm and Haas Electronic Materials LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

Inventor： Jae Hwan SIM ,  Jae-Bong LIM ,  Jung Kyu JO ,  Bon-ki KU ,  Cheng-Bai XU

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/0276 ,  H01L21/31058

Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different, a crosslinker, an acid catalyst and a solvent, wherein the gap-fill composition is disposed in the gaps; (c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with the second polymer to form a crosslinked polymer; (d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps; (e) patternwise exposing the photoresist layer to activating radiation; and (f) developing the photoresist layer to form a photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps with an antireflective coating material.

Abstract translation: 提供间隙填充方法。 所述方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙，其中所述间隙具有50nm或更小的宽度; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含包含可交联基团的第一聚合物，包含发色团的第二聚合物，其中所述第一聚合物和所述第二聚合物不同，交联剂， 酸催化剂和溶剂，其中间隙填充组合物设置在间隙中; （c）在温度下加热间隙填充组合物以使第一聚合物与第二聚合物自交联和/或交联以形成交联聚合物; （d）在包含交联聚合物填充间隙的基底上形成光致抗蚀剂层; （e）将光致抗蚀剂层图形化地曝光于激活辐射; 和（f）显影光致抗蚀剂层以形成光致抗蚀剂图案。 该方法在用抗反射涂层材料填充高纵横比间隙的半导体器件的制造中特别适用。

公开(公告)号：US20150185620A1

公开(公告)日：2015-07-02

申请号：US14586945

申请日：2014-12-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong LIU ,  Seung-Hyun LEE ,  Kevin ROWELL ,  Gerhard POHLERS ,  Cheng-Bai XU ,  Wenyan YIN ,  Thomas A. ESTELLE ,  Shintaro YAMADA

IPC: G03F7/40

CPC classification number: G03F7/405 ,  G03F7/0392

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了用于修整光致抗蚀剂图案的组合物和方法。 光致抗蚀剂图案修剪组合物包括：基质聚合物，其包含由以下通式（I）的单体形成的单元：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; R2选自C1-C15亚烷基; 并且R 3选自C 1 -C 3氟代烷基; 不含氟的芳香族酸; 和溶剂。 组合物和方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20150132921A1

公开(公告)日：2015-05-14

申请号：US14542428

申请日：2014-11-14

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jong Keun PARK ,  Cheng-Bai XU ,  Phillip D. Hustad ,  Mingqi LI

IPC: H01L21/762

CPC classification number: H01L21/76224

Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Abstract translation: 提供间隙填充方法。 所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团， 骨干 和（c）在温度下加热间隙填充组合物以使聚合物自交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

公开(公告)号：US20140187027A1

公开(公告)日：2014-07-03

申请号：US14145726

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cheng-Bai XU ,  Cheng Han WU ,  Dong Won CHUNG ,  Yoshihiro YAMAMOTO

IPC: H01L21/266

CPC classification number: H01L21/266 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了在半导体器件中形成离子注入区域的方法。 所述方法包括：（a）提供具有要离子注入的多个区域的半导体衬底; （b）在半导体衬底上形成光致抗蚀剂图案，其中光致抗蚀剂图案由包含具有酸不稳定基团的基质聚合物，光致酸产生剂和溶剂的化学放大光致抗蚀剂组合物形成; （c）在所述光致抗蚀剂图案上涂覆去除组合物，其中所述去除组合物包含：基体聚合物; 游离酸 和溶剂; （d）加热涂覆的半导体衬底; （e）使涂覆的半导体衬底与漂洗剂接触以从衬底去除残留的去除组合物和浮渣; 和（f）使用光刻胶图案作为植入物掩模离子注入半导体衬底的多个区域。 该方法在半导体器件的制造中具有特别的适用性。