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公开(公告)号:US20190081089A1
公开(公告)日:2019-03-14
申请号:US16124387
申请日:2018-09-07
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Hyun Min CHO , Shin Il CHOI , Sang Gab KIM , Su Bin BAE , Yu Gwang JEONG
IPC: H01L27/12 , H01L29/49 , H01L21/3213 , H01L29/786
Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, and wherein the second gate electrode includes a first layer that is provided on an insulating layer and includes molybdenum, a second layer that is provided on the first layer and includes titanium, and a third layer that is provided on the second layer and includes molybdenum.
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公开(公告)号:US20170278977A1
公开(公告)日:2017-09-28
申请号:US15271504
申请日:2016-09-21
Applicant: Samsung Display Co., Ltd.
Inventor: Yu-Gwang JEONG , Hyun Min CHO , Su Bin BAE , Shin Il CHOI
IPC: H01L29/786 , H01L27/12
CPC classification number: H01L29/78606 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/78603 , H01L29/78633 , H01L29/7869 , H01L29/78696
Abstract: A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from the data line in a plan view; a thin film transistor disposed on the buffer layer, the thin film transistor including an oxide semiconductor layer; and a pixel electrode connected to the thin film transistor.
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公开(公告)号:US20160379997A1
公开(公告)日:2016-12-29
申请号:US15175839
申请日:2016-06-07
Applicant: Samsung Display Co., Ltd.
Inventor: Jung Yun JO , Su Bin BAE , Sang Hyeon SONG , Cheol Geun AN
CPC classification number: H01L27/124 , G06F3/0416 , G06F2203/04103 , H01L27/1262
Abstract: An exemplary embodiment of the described technology relates generally to a display apparatus including a plurality of pixels and corresponding to one area of a substrate for displaying an image, and a pad area corresponding to another area of the substrate, the pad area including a lower electrode configured to transmit an electric signal to the pixels, and a plurality of pad electrodes electrically connecting the lower electrode and a driving chip, wherein each of the pad electrodes includes a first contact surface for contacting the lower electrode, a second contact surface for contacting the driving chip, and an oxide layer on a surface of the pad electrode that is exposed to the outside, and that connects the first contact surface and the second contact surface.
Abstract translation: 所描述的技术的示例性实施例一般涉及包括多个像素并且对应于用于显示图像的基板的一个区域的显示装置以及对应于该基板的另一个区域的焊盘区域,该焊盘区域包括下部电极 被配置为向所述像素发送电信号,以及电连接所述下电极和驱动芯片的多个焊盘电极,其中每个焊盘电极包括用于接触所述下电极的第一接触表面,用于接触所述下电极的第二接触表面 驱动芯片和暴露于外部的焊盘电极的表面上的氧化物层,并且连接第一接触表面和第二接触表面。
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公开(公告)号:US20160211353A1
公开(公告)日:2016-07-21
申请号:US14966125
申请日:2015-12-11
Applicant: Samsung Display Co., Ltd.
Inventor: Jung Yun JO , Su Bin BAE , Ki Seong SEO
IPC: H01L29/66 , H01L29/45 , H01L29/786 , H01L29/24 , H01L21/475 , H01L21/02
CPC classification number: H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L29/41733 , H01L29/45 , H01L29/78606 , H01L29/7869
Abstract: There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.
Abstract translation: 提供一种制造氧化物薄膜晶体管(TFT)的方法。 该方法包括在衬底上形成栅电极,在栅电极上形成一绝热层,在栅极绝缘层上形成包括沟道层的氧化物半导体层,形成在其上分离的源极和漏电极 氧化半导体层,在碳(C)气氛下对其上形成有源电极和漏电极的基板进行等离子体处理,其次,在氮氧化物气氛下等离子体处理基板,依次形成第一保护层和第二保护层 层。
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公开(公告)号:US20230387096A1
公开(公告)日:2023-11-30
申请号:US18233190
申请日:2023-08-11
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Su Bin BAE , Yu Gwang JEONG , Shin Il CHOI , Joon Geol LEE , Sang Gab KIM
IPC: H01L25/16 , H01L33/20 , H01L33/44 , H01L33/54 , H01L33/62 , H01L25/075 , H01L21/306 , H01L33/00
CPC classification number: H01L25/167 , H01L33/20 , H01L33/44 , H01L33/54 , H01L27/124 , H01L25/0753 , H01L21/30621 , H01L33/005 , H01L2933/005 , H01L33/62
Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
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公开(公告)号:US20230180526A1
公开(公告)日:2023-06-08
申请号:US17880744
申请日:2022-08-04
Applicant: Samsung Display Co., LTD.
Inventor: Dae Won CHOI , Sang Gab KIM , Su Bin BAE , Yun Jong YEO , Da Woon JUNG , Yu Gwang JEONG
CPC classification number: H01L27/3246 , H01L51/5056 , H01L51/5072 , H01L51/56 , H01L2251/308 , H01L2227/323
Abstract: A display panel includes: a plurality of first electrodes disposed on a via-layer and corresponding to a plurality of pixel areas, respectively; a pixel-defining layer disposed on the via-layer; first opening parts corresponding to central portions of the first electrodes and penetrating through the pixel-defining layer; electrode undercuts corresponding to edges of the first opening parts and provided as gaps between the first electrodes and the pixel-defining layer; a plurality of second opening parts corresponding to peripheries of the first electrodes, respectively, and penetrating through the pixel-defining layer; and via-grooves corresponding to the second opening parts and defined on an upper surface of the via-layer; via-undercuts provided by the pixel-defining layer around the second opening parts and the via-layer around the via-grooves.
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公开(公告)号:US20230054453A1
公开(公告)日:2023-02-23
申请号:US17735294
申请日:2022-05-03
Applicant: Samsung Display Co., LTD.
Inventor: Su Bin BAE , Yun Jong YEO , Da Woon JUNG , Yu Gwang JEONG
Abstract: A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.
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公开(公告)号:US20220005799A1
公开(公告)日:2022-01-06
申请号:US17479928
申请日:2021-09-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Su Bin BAE , Yu Gwang JEONG , Shin Il CHOI , Joon Geol LEE , Sang Gab KIM
IPC: H01L25/16 , H01L33/20 , H01L33/44 , H01L33/54 , H01L33/62 , H01L25/075 , H01L21/306 , H01L33/00
Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
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公开(公告)号:US20210217738A1
公开(公告)日:2021-07-15
申请号:US17094630
申请日:2020-11-10
Applicant: Samsung Display Co., Ltd.
Inventor: Su Bin BAE , Seon Il KIM , Sung Won CHO , Yun Jong YEO , Yu Gwang JEONG
IPC: H01L25/075 , H01L25/16 , H01L33/62
Abstract: A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.
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公开(公告)号:US20210132424A1
公开(公告)日:2021-05-06
申请号:US16905306
申请日:2020-06-18
Applicant: Samsung Display Co., LTD.
Inventor: Seon-Il KIM , Sung Won CHO , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG , Dae Won CHOI
IPC: G02F1/1368 , G02F1/1362 , H01L51/56 , H01L27/32 , H01L51/52
Abstract: A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.
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