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    Piezoelectric piece for piezoelectric vibrator and manufacturing method thereof
    13.
    发明授权
    Piezoelectric piece for piezoelectric vibrator and manufacturing method thereof 有权
    压电振子用压电片及其制造方法

    公开(公告)号：US09455683B2

    公开(公告)日：2016-09-27

    申请号：US14108575

    申请日：2013-12-17

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Je-Hong Kyoung ,  Ho-Phil Jung ,  Tae-Joon Park ,  Won Han ,  Sung-Wook Kim

    IPC: H03H9/21 ,  H03H3/02

    CPC classification number: H03H9/21 ,  H03H3/02 ,  H03H2003/026 ,  Y10T29/42

    Abstract: The present invention presents a piezoelectric piece for a piezoelectric vibrator and a manufacturing method thereof. The piezoelectric piece for a piezoelectric vibrator in accordance with an embodiment of the present invention includes: a base; and a vibrating arm connected to the base and having a groove formed therein. Here, one surface inside the groove includes: a first slope extended from an upper portion of the groove in a lower direction so as to have a first angle; and a second slope extended from a lower portion of the first slope in a lower direction so as to have a second angle that is greater than the first angle, and a rate of a depth of the first slope for a depth of the groove is greater than or equal to 0.5 and less than or equal to 1.

    Abstract translation: 本发明提供一种压电振动器用压电体及其制造方法。 根据本发明实施例的用于压电振动器的压电片包括：基座; 以及连接到所述基座并且在其中形成有凹槽的振动臂。 这里，凹槽内的一个表面包括：从下部方向的槽的上部延伸的第一斜面，以便具有第一角度; 以及从第一斜面的下部沿下方延伸的第二斜面，以具有大于第一角度的第二角度，并且所述凹槽的深度的第一斜率的深度的比率更大 大于等于0.5且小于等于1。

    Acoustic resonator
    14.
    发明授权
    Acoustic resonator 有权

    公开(公告)号：US11563417B2

    公开(公告)日：2023-01-24

    申请号：US16137710

    申请日：2018-09-21

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Dae Hun Jeong ,  Sang Uk Son ,  Won Han ,  Jong Woon Kim

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

    Abstract: An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.

    Bulk-acoustic resonator and elastic wave filter device
    16.
    发明授权
    Bulk-acoustic resonator and elastic wave filter device 有权

    公开(公告)号：US11437977B2

    公开(公告)日：2022-09-06

    申请号：US16662473

    申请日：2019-10-24

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Tae Yoon Kim ,  Won Han ,  Moon Chul Lee

    IPC: H03H9/17 ,  H03H9/13 ,  C23C16/44 ,  H03H9/54 ,  H03H3/04

    Abstract: A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.

    Acoustic resonator and method of manufacturing thereof
    17.
    发明授权
    Acoustic resonator and method of manufacturing thereof 有权

    公开(公告)号：US11431318B2

    公开(公告)日：2022-08-30

    申请号：US16391650

    申请日：2019-04-23

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Won Han ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Sang Uk Son ,  Sang Kee Yoon

    IPC: H03H9/13 ,  H03H9/17 ,  H01L41/047 ,  H03H3/02 ,  H03H9/02

    Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

    BULK ACOUSTIC RESONATOR
    18.
    发明申请
    BULK ACOUSTIC RESONATOR 有权

    公开(公告)号：US20220239278A1

    公开(公告)日：2022-07-28

    申请号：US17307055

    申请日：2021-05-04

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Sang Uk Son ,  Sung Wook Kim ,  Won Han ,  Jong Woon Kim ,  Jeong Hoon Ryou ,  Sang Heon Han

    IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

    Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(−0.59*F)] is [[ln{0.008 (μm)2}]/{−0.59*(3.5 GHz)}] or more and [[ln{0.022 (μm)2}]/{−0.59*(3.5 GHz)}] or less.

    BULK-ACOUSTIC WAVE RESONATOR
    19.
    发明申请
    BULK-ACOUSTIC WAVE RESONATOR 有权

    公开(公告)号：US20220038075A1

    公开(公告)日：2022-02-03

    申请号：US17144602

    申请日：2021-01-08

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Tae Kyung LEE ,  Won Han ,  Moon Chul LEE ,  Sang Uk SON ,  Hwa Sun LEE

    IPC: H03H9/17 ,  H03H9/02

    Abstract: A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.

    Bulk-acoustic wave resonator
    20.
    发明授权
    Bulk-acoustic wave resonator 有权

    公开(公告)号：US10892737B2

    公开(公告)日：2021-01-12

    申请号：US16388979

    申请日：2019-04-19

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Won Han ,  Tae Yoon Kim ,  Sang Uk Son ,  Chang Hyun Lim

    IPC: H03H9/54 ,  H03H9/13 ,  H03H9/205 ,  H03H9/02

    Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

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