公开(公告)号：US12199165B2

公开(公告)日：2025-01-14

申请号：US17670949

申请日：2022-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Seunggeol Nam ,  Keunwook Shin ,  Dohyun Lee

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.

公开(公告)号：US11180373B2

公开(公告)日：2021-11-23

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Keunwook Shin ,  Hyeonjin Shin ,  Changseok Lee ,  Changhyun Kim ,  Kyungeun Byun ,  Seungwon Lee ,  Eunkyu Lee

IPC: H01L23/00 ,  C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50 ,  H01L27/24 ,  C01B32/182 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US10671865B2

公开(公告)日：2020-06-02

申请号：US15708978

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim

IPC: G06K9/00 ,  G05D1/00 ,  G05D1/02 ,  G08G1/16 ,  G06N3/08 ,  G06N3/04

Abstract: A processor implemented vehicle control method for autonomous driving includes: obtaining a driving image of a vehicle; determining a control parameter for controlling the vehicle in response to a driving situation of the vehicle by applying the driving image to a neural network; and transmitting the control parameter to an electronic control unit (ECU) of the vehicle for controlling the vehicle to drive autonomously, wherein the neural network comprises first layers in a convolutional structure and second layers in a recurrent structure, the driving image is applied to a first layer among the first layers, a last layer among the first layers is connected with a first layer among the second layers, and the control parameter is output from a last layer among the second layers.

公开(公告)号：US10546201B2

公开(公告)日：2020-01-28

申请号：US15583339

申请日：2017-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoa Kang ,  Changhyun Kim

IPC: G06K9/00 ,  G06K9/78 ,  G06N3/08 ,  G08G1/16

Abstract: Disclosed is a method and apparatus for determining an abnormal object, the method including selecting a candidate object from target objects extracted from a two-dimensional (2D) image of a front view captured from a host vehicle, generating a three-dimensional (3D) model of the candidate object, determining, based on the 3D model, whether the candidate object corresponds to an abnormal object that interferes with driving of the host vehicle, and outputting the abnormal object, in response to the candidate object corresponding to the abnormal object.

公开(公告)号：US10217513B2

公开(公告)日：2019-02-26

申请号：US15448998

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Seunggeol Nam ,  Changhyun Kim ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Jinseong Heo ,  Seongjun Park

IPC: G11C11/00 ,  G11C13/00 ,  H01L27/24 ,  H01L45/00

Abstract: A phase change memory device may include a phase change layer that includes a two-dimensional (2D) material. The phase change layer may include a layered structure that includes one or more layers of 2D material. The phase change layer may be provided between a first electrode and a second electrode, and the phase of at least a portion of one or more of the layers of 2D material may be changed based on an electrical signal applied to the phase change layer through the first electrode and the second electrode. The 2D material may include a chalcogenide-based material or phosphorene. The 2D material may be associated with a phase change temperature that is greater than or equal to about 200° C. and lower than or equal to about 500° C.

公开(公告)号：US10199469B2

公开(公告)日：2019-02-05

申请号：US15439031

申请日：2017-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Nam ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Minhyun Lee ,  Changhyun Kim ,  Seongjun Park

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L21/283 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

Abstract: A semiconductor device includes a silicon semiconductor layer including at least one region doped with a first conductive type dopant, a metal material layer electrically connected to the doped region, and a self-assembled monolayer (SAM) between the doped region and the metal material layer, the SAM forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a Schottky barrier height (SBH).

公开(公告)号：US12167822B2

公开(公告)日：2024-12-17

申请号：US17681566

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Johannes Büsing ,  Jongwook Kwon ,  Sojeong Kim ,  Changhyun Kim ,  Hyunjoo Kim ,  Woojin Shin

IPC: A47L15/42 ,  A47L15/48

Abstract: A dishwasher including a tub provided in the cabinet to form a washing chamber, and a drying apparatus arranged on a side wall of the tub and including a flow path provided to allow air sucked from the washing chamber to flow, a heater arranged in the flow path to heat air in the flow path, and a switch arranged upstream of the heater to turn off the heater in response to air, which is adjacent to the heater, reaching a predetermined temperature.

公开(公告)号：US12147888B2

公开(公告)日：2024-11-19

申请号：US17500429

申请日：2021-10-13

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Changhyun Kim ,  Houk Jang ,  Henry Julian Hinton ,  Hyeonjin Shin ,  Minhyun Lee ,  Donhee Ham

IPC: G06N3/045 ,  G06F18/214 ,  G06T7/11

Abstract: Disclosed is a neural computer including an image sensor capable of controlling a photocurrent. The neural computer according to an embodiment includes a preprocessor configured to receive an image and generate a feature map for the received image; a flattening unit configured to transform the feature map generated by the preprocessor into tabular data to provide data output; and an image classifier configured to classify images received through the preprocessor by using the data output by the flattening unit as an input value. The preprocessor includes an optical signal processor configured to receive the image and generate the feature map.

公开(公告)号：US20240014315A1

公开(公告)日：2024-01-11

申请号：US18157416

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Changhyun Kim ,  Kyung-Eun Byun ,  Eunkyu Lee

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/16 ,  H01L29/417

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/1606 ,  H01L29/41741

Abstract: A semiconductor device may include a substrate including a source region and a drain region in a trench, a gate insulating layer in the trench, and a gate electrode in the trench. The gate electrode may include a lower filling portion and an upper filling portion surrounded by the gate insulating layer. The lower filling portion may include a first conductive layer surrounded by the gate insulating layer and may fill a lower region of the trench. The upper filling portion may include a second conductive layer surrounded by the gate insulating layer and may fill an upper region of the trench. The first conductive layer may include graphene doped with metal.

公开(公告)号：US11869768B2

公开(公告)日：2024-01-09

申请号：US18063909

申请日：2022-12-09

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun Kim ,  Sang-Woo Kim ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Ahrum Sohn ,  Jaehwan Jung

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/02568 ,  H01L21/0242 ,  H01L21/02376 ,  H01L21/02417 ,  H01L21/02488 ,  H01L21/02631

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.