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公开(公告)号：US12262527B2
公开(公告)日：2025-03-25
申请号：US17668004
申请日：2022-02-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changseok Lee , Sangwon Kim , Changhyun Kim , Kyung-Eun Byun , Eunkyu Lee
Abstract: Provided are a vertical-channel cell array transistor structure and a dynamic random-access memory (DRAM) device including the same. The vertical-channel cell array transistor structure includes a semiconductor substrate, a plurality of channels arranged in an array on the semiconductor substrate and each extending perpendicularly from the semiconductor substrate, a gate insulating layer on the plurality of channels, a plurality of word lines on the semiconductor substrate and extending in a first direction, and a two-dimensional (2D) material layer on at least one surface of each of the plurality of word lines.
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公开(公告)号：US11572278B2
公开(公告)日：2023-02-07
申请号：US16675350
申请日：2019-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonjin Shin , Keunwook Shin , Changhyun Kim , Seunggeol Nam , Kyung-Eun Byun , Hyunjae Song , Eunkyu Lee , Changseok Lee , Alum Jung , Yeonchoo Cho
IPC: B32B9/00 , C01B32/186 , B82Y30/00
Abstract: A method of growing graphene includes forming a carbon monolayer on a substrate by injecting a first reaction gas into a reaction chamber, wherein the first reaction gas includes a first source including a component that is a carbon source and belongs to an electron withdrawing group, and injecting a second reaction gas including a second source into the reaction chamber, wherein the second source includes a functional group that forms a volatile structure by reacting with a component that belongs to an electron withdrawing group. Graphene may be directly grown on a surface of the substrate by repeatedly injecting the first reaction gas and the second reaction gas.
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公开(公告)号：US20200350164A1
公开(公告)日：2020-11-05
申请号：US16678115
申请日：2019-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunkyu Lee , Kyung-Eun Byun , Hyunjae Song , Hyeonjin Shin , Changhyun Kim , Keunwook Shin , Changseok Lee , Alum Jung
IPC: H01L21/02 , H01L29/16 , H01L29/165
Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
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公开(公告)号：US20200035602A1
公开(公告)日：2020-01-30
申请号：US16238208
申请日：2019-01-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunggeol Nam , Hyeonjin Shin , Keunwook Shin , Changhyun Kim , Kyung-Eun Byun , Hyunjae Song , Eunkyu Lee , Changseok Lee , Alum Jung , Yeonchoo Cho
IPC: H01L23/532 , H01L23/528 , H01L23/522
Abstract: An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.
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公开(公告)号：US12103850B2
公开(公告)日：2024-10-01
申请号：US17060893
申请日：2020-10-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Van Luan Nguyen , Keunwook Shin , Hyeonjin Shin , Changhyun Kim , Changseok Lee , Yeonchoo Cho
IPC: B32B9/00 , C01B32/186
CPC classification number: C01B32/186 , Y10T428/30
Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.
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Patent Agency Ranking
公开(公告)号：US11887849B2
公开(公告)日：2024-01-30
申请号：US17012661
申请日：2020-09-04
Inventor： Changhyun Kim , Sangwoo Kim , Kyung-Eun Byun , Hyeonjin Shin , Ahrum Sohn , Jaehwan Jung
CPC classification number: H01L21/02631 , C23C14/06 , C23C14/34 , C23C14/5806 , H01L21/02667 , H01L29/66969 , H01L21/02568 , H01L21/02592 , H01L21/02595
Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.
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公开(公告)号：US11713248B2
公开(公告)日：2023-08-01
申请号：US17138194
申请日：2020-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changseok Lee , Changhyun Kim , Kyung-Eun Byun , Keunwook Shin , Hyeonjin Shin , Eunkyu Lee
IPC: C23C16/26 , C01B32/186 , C01B32/194 , C23C16/513 , C23C16/04 , C23C16/02
CPC classification number: C01B32/186 , C01B32/194 , C23C16/02 , C23C16/04 , C23C16/26 , C23C16/513
Abstract: A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.
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8.发明授权公开(公告)号：US11668782B2
公开(公告)日：2023-06-06
申请号：US16737219
申请日：2020-01-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jongyoub Ryu , Geunwoo Kim , Changhyun Kim , Soohoon Lee , Byoungkab Choi
CPC classification number: G01S3/801 , G01S3/8083 , H04M1/03
Abstract: Provided is an electronic apparatus. The electronic apparatus includes an audio receiver configured to obtain an audio signal of sound output by an external object; a sensor configured to sense a posture of the electronic apparatus; a display; and a processor configured to, based on the audio signal that is obtained by the audio receiver, determine a direction in which the external object is located with respect to the electronic apparatus, and control the display to display a graphical object that corresponds to the external object based on the posture of the electronic apparatus sensed by the sensor and the direction in which the external object is located.
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公开(公告)号：US10511911B2
公开(公告)日：2019-12-17
申请号：US16013003
申请日：2018-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun Kim , YoungWan Seo
Abstract: Disclosed is a method and apparatus for playing music that acquires surrounding situation information including a driving situation and a movement of an object relative to a driving vehicle, generates sound information to represent the surrounding situation information as a change in a sound transferred through an audio device including speakers in the vehicle, and controls the audio device based on the sound information to play the music.
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公开(公告)号：US09761532B2
公开(公告)日：2017-09-12
申请号：US15083827
申请日：2016-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunwook Shin , Hyeonjin Shin , Changhyun Kim , Changseok Lee , Seongjun Park , Hyunjae Song
IPC: H01L23/495 , H01L23/532 , H01L23/528
CPC classification number: H01L23/53276 , H01L23/485 , H01L23/5283
Abstract: A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.
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