公开(公告)号：US09323648B2

公开(公告)日：2016-04-26

申请号：US14026042

申请日：2013-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeong-hu Lee ,  Tai-ryong Kang ,  Sang-deok Kim ,  Yong-hee Park ,  Sang-rae Lee ,  Jae-hoon Lee

IPC: G06F9/44 ,  G06F11/36 ,  H04N17/00 ,  H04N21/442 ,  H04N21/4363 ,  H04N21/443

CPC classification number: G06F11/3672 ,  G06F11/3684 ,  G06F11/3688 ,  H04N17/004 ,  H04N21/43635 ,  H04N21/4424 ,  H04N21/443

Abstract: An automatic test apparatus for embedded software and an automatic testing method thereof, the automatic testing apparatus for embedded software, includes an output detector which collects interface status information in accordance with data transmission/reception from at least one of first and second electronic devices respectively loaded with first and second embedded software and exchanging data therebetween, and extracts a keyword from the collected interface status information, a scenario composer which uses identification information about the first and second embedded software and the extracted keyword, and composes a scenario corresponding to a predetermined event status and a control command generator which generates a control command to reproduce the event status based on the composed scenario. Thus, it is possible to previously detect unpredictable and predictable problems that may occur in interaction between the plurality of embedded software, interface operation to transmit and receive data, etc., and reproduce them.

Abstract translation: 一种用于嵌入式软件的自动测试装置及其自动测试方法，用于嵌入式软件的自动测试装置包括输出检测器，其根据分别加载的第一和第二电子设备中的至少一个的数据发送/接收来收集接口状态信息 利用第一和第二嵌入式软件在其间交换数据，并从所收集的接口状态信息中提取关键词，使用关于第一和第二嵌入式软件的标识信息和所提取的关键字的场景作曲者，并且构成与预定事件相对应的场景 状态和控制命令生成器，其生成基于组合场景再现事件状态的控制命令。 因此，可以预先检测可能在多个嵌入式软件之间的交互中发生的不可预测和可预测的问题，用于发送和接收数据的接口操作等，并再现它们。

公开(公告)号：US09029916B2

公开(公告)日：2015-05-12

申请号：US14186831

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Ki-se Kim

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66143 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/872

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括散热基板（即，导热基板）; 布置在散热基板上并具有N面极性的GaN基多层; 以及配置在GaN基多层上的异质结构场效应晶体管（HFET）或肖特基电极。 HFET器件可以包括具有双凹槽结构的栅极。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。

公开(公告)号：US11031962B2

公开(公告)日：2021-06-08

申请号：US16779763

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-hyun Oh ,  Chilun Lo ,  Barosaim Sung ,  Jae-hoon Lee ,  Jong-woo Lee

IPC: H04B1/00 ,  H03L7/08 ,  H04L27/26 ,  H04L5/00

Abstract: Provided are a radio-frequency integrated chip (RFIC) and a wireless communication device including the RFIC. An RFIC configured to receive a carrier aggregated receive signal having at least first and second carrier signals may include first and second carrier receivers configured to generate, from the receive signal, first and second digital carrier signals, respectively. A phase-locked loop (PLL) may output a first frequency signal having a first frequency to the first carrier receiver and the second carrier receiver. The first and second carrier receivers may include first and second analog mixers, respectively, for translating frequencies of the receive signal, using the first frequency signal and the second frequency signal, respectively. Each of the first and second carrier receivers may further include a digital mixer for further translating the frequencies of the receive signal in the digital domain.

公开(公告)号：US10932210B2

公开(公告)日：2021-02-23

申请号：US15794091

申请日：2017-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-su Kim ,  Sang-bum Sung ,  Jae-hoon Lee ,  Si-myung Chang

IPC: H04W56/00 ,  H04L12/28 ,  H04L12/46 ,  H04L12/863 ,  H04L29/06 ,  H04L29/08 ,  H04R3/12 ,  H04W84/12 ,  H04W84/18

Abstract: A first content output device (e.g., speaker) may include a communication interface, an output unit, and a processor. The first content output device, upon receiving a request, selectively transmits audio content to an external content output device (e.g., speaker) via two different networks. While the external content device is buffering the audio content received from the first content device via a first network, the devices are setting up for connection via a different second network. When the setting for connection between the device via the second network is completed, the first content output device switches to transmitting the audio content to the external content output device via the second network.

公开(公告)号：US10560128B2

公开(公告)日：2020-02-11

申请号：US16203943

申请日：2018-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-hyun Oh ,  Chilun Lo ,  Barosaim Sung ,  Jae-hoon Lee ,  Jong-woo Lee

IPC: H04B1/00 ,  H03L7/08 ,  H04L27/26

Abstract: Provided are a radio-frequency integrated chip (RFIC) and a wireless communication device including the RFIC. An RFIC configured to receive a carrier aggregated receive signal having at least first and second carrier signals may include first and second carrier receivers configured to generate, from the receive signal, first and second digital carrier signals, respectively. A phase-locked loop (PLL) may output a first frequency signal having a first frequency to the first carrier receiver and the second carrier receiver. The first and second carrier receivers may include first and second analog mixers, respectively, for translating frequencies of the receive signal, using the first frequency signal and the second frequency signal, respectively. Each of the first and second carrier receivers may further include a digital mixer for farther translating the frequencies of the receive signal in the digital domain.

公开(公告)号：US10361309B2

公开(公告)日：2019-07-23

申请号：US15404697

申请日：2017-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Gi-gwan Park ,  Tae-young Kim

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/15 ,  H01L29/267 ,  H01L29/20 ,  H01L29/22 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

公开(公告)号：US09379227B2

公开(公告)日：2016-06-28

申请号：US14995622

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括形成在衬底上的多个半导体层，其中在半导体层中形成二维电子气（2DEG）层; 形成在所述多个半导体层上的蚀刻停止层; 形成在蚀刻停止层上的p型半导体层图案; 以及形成在p型半导体层图案上的栅电极。

公开(公告)号：US20160126339A1

公开(公告)日：2016-05-05

申请号：US14995622

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括在衬底上形成的多个半导体层，其中在半导体层中形成二维电子气（2DEG）层; 形成在所述多个半导体层上的蚀刻停止层; 形成在蚀刻停止层上的p型半导体层图案; 以及形成在p型半导体层图案上的栅电极。

公开(公告)号：US09112010B2

公开(公告)日：2015-08-18

申请号：US14160629

申请日：2014-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H01L29/43 ,  H01L29/66 ,  H01L29/24 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/66462

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract translation: 一种氮化物系半导体器件，包括：衬底; 在该衬底上的含GaN层; GaN层上的含氮化物层; 在所述含氮化物层上的沟道阻挡层，所述沟道阻挡层包括氮化物基半导体; 沟道阻挡层上的栅极绝缘层; 以及栅极绝缘层上的栅电极。