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    IMAGE SENSORS WITH IMPROVED SURFACE PLANARITY
    11.
    发明申请
    IMAGE SENSORS WITH IMPROVED SURFACE PLANARITY 有权

    公开(公告)号：US20170141146A1

    公开(公告)日：2017-05-18

    申请号：US15139505

    申请日：2016-04-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Aaron BELSHER ,  Richard MAURITZSON ,  Swarnal BORTHAKUR ,  Ulrich BOETTIGER

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

    MICROLENSES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS
    12.
    发明申请
    MICROLENSES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS 有权

    公开(公告)号：US20220181373A1

    公开(公告)日：2022-06-09

    申请号：US17651916

    申请日：2022-02-22

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marc Allen SULFRIDGE ,  Byounghee LEE ,  Ulrich BOETTIGER

    IPC: H01L27/146 ,  H01L31/107

    Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

    MICROLENSES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS
    13.
    发明申请
    MICROLENSES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS 审中-公开

    公开(公告)号：US20200295069A1

    公开(公告)日：2020-09-17

    申请号：US16402429

    申请日：2019-05-03

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marc Allen SULFRIDGE ,  Byounghee LEE ,  Ulrich BOETTIGER

    IPC: H01L27/146 ,  H01L31/107

    Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION
    14.
    发明申请
    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION 审中-公开

    公开(公告)号：US20180269245A1

    公开(公告)日：2018-09-20

    申请号：US15758387

    申请日：2016-12-08

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marko MLINAR ,  Ulrich BOETTIGER ,  Richard MAURITZSON

    IPC: H01L27/146 ,  H04N5/369 ,  H04N9/04

    CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H04N5/3696 ,  H04N9/04

    Abstract: An image sensor may include pixels having nested sub-pixels. A pixel with nested sub-pixels may include an inner sub-pixel that has either an elliptical or a rectangular light collecting area. The inner sub-pixel may be formed in a substrate and may be immediately surrounded by a sub-pixel group that includes one or more sub-pixels. The inner sub-pixel may have a light collecting area at a surface that is less sensitive than the light collecting area of the one or more outer sub-pixel groups. Microlenses may be formed over the nested sub-pixels, to direct light away from the inner sub-pixel group to the outer sub-pixel groups in nested sub-pixels. A color filter of a single color may be formed over the nested sub-pixels. Hybrid color filters having a single color filter region over the inner sub-pixel and a portion of the one or more outer sub-pixel groups may also be used.

    IMAGING SYSTEMS WITH FLUIDIC COLOR FILTER ELEMENTS
    15.
    发明申请
    IMAGING SYSTEMS WITH FLUIDIC COLOR FILTER ELEMENTS 审中-公开

    公开(公告)号：US20180095264A1

    公开(公告)日：2018-04-05

    申请号：US15283707

    申请日：2016-10-03

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

    IPC: G02B26/00 ,  H04N9/04 ,  H04N5/33 ,  H01L27/146

    CPC classification number: G02B26/004 ,  G02B5/201 ,  G02B26/007 ,  H01L27/14621 ,  H01L27/14645 ,  H04N5/33 ,  H04N9/045

    Abstract: Imaging systems may include fluidic color filter elements to increase the flexibility of the system. An imaging system may include a number of fluid reservoirs with different color filter element fluids. The imaging sensor may include a number of separated color filter chambers. Fluids from the fluid reservoirs may be directed to specific color filter chambers as desired, with the option to change the color filter fluid in a chamber to a different color filer fluid at any time. To move the fluids to and from the fluid reservoirs to the color filter chambers, electrowetting may be used. The color filter chambers may be interposed between a ground electrode and a number of patterned electrodes. Voltages may be applied to the patterned electrodes to move the fluid to desired positions within the chambers.

    IMAGING SYSTEMS WITH INTEGRATED LIGHT SHIELD STRUCTURES
    17.
    发明申请
    IMAGING SYSTEMS WITH INTEGRATED LIGHT SHIELD STRUCTURES 有权
    具有集成光屏结构的成像系统

    公开(公告)号：US20160352983A1

    公开(公告)日：2016-12-01

    申请号：US14723147

    申请日：2015-05-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ulrich BOETTIGER ,  Andrew PERKINS ,  Marc SULFRIDGE ,  Swarnal BORTHAKUR

    IPC: H04N5/225 ,  H01L27/146 ,  H04N9/04

    CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2254 ,  H04N9/045

    Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

    Abstract translation: 成像系统可以包括具有像素阵列的图像传感器。 图像传感器可以包括形成在衬底上的微透镜阵列和插入在微透镜和衬底之间的滤色器元件的阵列。 电介质壁结构可以插在滤色器元件之间。 光屏蔽结构可以形成在电介质壁结构内或上，并且可以用于减少相邻像素之间的光学串扰。 遮光结构可以形成在滤色器元件的相对侧或角上，并且可以沿着滤色器元件的高度部分或全部地延伸。 在一些布置中，遮光结构可以各自具有接触相邻滤色器元件的侧表面的垂直部分和接触相邻滤色器元件的下表面的水平部分。

    IMAGE SENSORS WITH INCREASED STACK HEIGHT FOR PHASE DETECTION PIXELS
    18.
    发明申请
    IMAGE SENSORS WITH INCREASED STACK HEIGHT FOR PHASE DETECTION PIXELS 审中-公开
    具有增加的堆叠高度的图像传感器用于相位检测像素

    公开(公告)号：US20160269662A1

    公开(公告)日：2016-09-15

    申请号：US14656400

    申请日：2015-03-12

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jason HEPPER ,  Ulrich BOETTIGER

    IPC: H04N5/369 ,  H01L27/146 ,  H04N9/04

    CPC classification number: H04N5/3696 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/23212 ,  H04N9/045

    Abstract: An image sensor may include a pixel array with a plurality of image pixels and a plurality of phase detection pixels. The plurality of phase detection pixels may have a greater stack height than the plurality of image pixels. Varying the stack height of pixels in the pixel array may enable the stack height of the image pixels to be optimized for gathering image data while the stack height of the phase detection pixels is optimized to gather phase detection data. A support structure may be used to increase the stack height of the phase detection pixels. The support structure may be formed over a color filter array or one or more microlenses. The support structure may include color filter elements to supplement or replace the color filter elements of the color filter array.

    Abstract translation: 图像传感器可以包括具有多个图像像素和多个相位检测像素的像素阵列。 多个相位检测像素可以具有比多个图像像素更大的堆叠高度。 改变像素阵列中的像素的堆叠高度可以使得优化图像像素的堆叠高度，以便在相位检测像素的堆叠高度被优化以收集相位检测数据时收集图像数据。 可以使用支撑结构来增加相位检测像素的堆叠高度。 支撑结构可以形成在滤色器阵列上或一个或多个微透镜上。 支撑结构可以包括用于补充或替换滤色器阵列的滤色器元件的滤色器元件。

    HIGH DYNAMIC RANGE IMAGE SENSOR WITH A NEUTRAL DENSITY FILTER
    20.
    发明申请
    HIGH DYNAMIC RANGE IMAGE SENSOR WITH A NEUTRAL DENSITY FILTER 有权

    公开(公告)号：US20210281750A1

    公开(公告)日：2021-09-09

    申请号：US16808096

    申请日：2020-03-03

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Amanda Thuy Trang VU ,  Swarnal BORTHAKUR ,  Ulrich BOETTIGER ,  Stanley MICINSKI

    IPC: H04N5/232 ,  H04N9/04 ,  H04N5/225

    Abstract: A high dynamic range image sensor may include a plurality of pixel groups. One or more pixel groups may include attenuated pixels in addition to unattenuated pixels. The unattenuated pixels may include a photosensitive area, a color filter element and a microlens of a first size. Each attenuated pixel may include a photosensitive area, a color filter element, a neutral density filter, and a microlens of a second size that is smaller than the first size. The color filter elements for each pixel in a given pixel group may be the same color. The neutral density filter may attenuate light for the attenuated pixels, increasing dynamic range of the image sensor. The microlenses of varying sizes may redirect light from attenuated pixels towards unattenuated pixels, further increasing the dynamic range.

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