公开(公告)号：US20210020910A1

公开(公告)日：2021-01-21

申请号：US17064724

申请日：2020-10-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/134 ,  H01M4/131 ,  H01M4/525 ,  H01M4/36 ,  H01M10/0525

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20200343530A1

公开(公告)日：2020-10-29

申请号：US16923494

申请日：2020-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/86

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20200328413A1

公开(公告)日：2020-10-15

申请号：US16910170

申请日：2020-06-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/36 ,  H01M4/131 ,  H01M10/0525

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20200313178A1

公开(公告)日：2020-10-01

申请号：US16901118

申请日：2020-06-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/36 ,  H01M4/131 ,  H01M10/0525

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20180350998A1

公开(公告)日：2018-12-06

申请号：US16053200

申请日：2018-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01L29/24 ,  H01L27/12 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20180308989A1

公开(公告)日：2018-10-25

申请号：US16021490

申请日：2018-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20180166581A1

公开(公告)日：2018-06-14

申请号：US15891583

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US20180145153A1

公开(公告)日：2018-05-24

申请号：US15856763

申请日：2017-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Takashi SHIMAZU

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

公开(公告)号：US20180053857A1

公开(公告)日：2018-02-22

申请号：US15795736

申请日：2017-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

公开(公告)号：US20150325702A1

公开(公告)日：2015-11-12

申请号：US14801066

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

Abstract translation: 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件，从而实现高生产率。 在包括在氧化物半导体膜上设置有源电极层和漏极电极层并与氧化物半导体膜接触的晶体管的半导体器件中，抑制了氧化物半导体膜的端面部分中杂质的进入和氧空位的形成 。 这可以防止在氧化物半导体膜的端面部分形成寄生沟道而导致的晶体管的电特性的波动。