公开(公告)号：US09269797B2

公开(公告)日：2016-02-23

申请号：US14632081

申请日：2015-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L29/66 ,  H01L29/786 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477

CPC classification number: H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20150187950A1

公开(公告)日：2015-07-02

申请号：US14574904

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi Sato ,  Naoto Yamade

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78603

Abstract: A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film.

Abstract translation: 提供具有稳定电特性的晶体管。 形成含有硼的氧化铝膜，以防止氢扩散到氧化物半导体膜中。

公开(公告)号：US12046683B2

公开(公告)日：2024-07-23

申请号：US17861432

申请日：2022-07-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka Okazaki ,  Akihisa Shimomura ,  Naoto Yamade ,  Tomoya Takeshita ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US11967649B2

公开(公告)日：2024-04-23

申请号：US17895126

申请日：2022-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786 ,  H01L29/792 ,  H10B12/00

CPC classification number: H01L29/78693 ,  H01L21/8234 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1255 ,  H01L29/792 ,  H10B12/00

Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US09543145B2

公开(公告)日：2017-01-10

申请号：US15046962

申请日：2016-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/12

CPC classification number: H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

Abstract translation: 使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。 在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜 ） 形成了。

公开(公告)号：US09171943B2

公开(公告)日：2015-10-27

申请号：US14583338

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto Yamade ,  Junichi Koezuka ,  Miki Suzuki ,  Yuichi Sato

IPC: H01L21/265 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/265 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

公开(公告)号：US20150179774A1

公开(公告)日：2015-06-25

申请号：US14570422

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Naoto Yamade ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Masayuki Sakakura ,  Yuhei Sato ,  Yasumasa Yamane

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/383 ,  H01L21/465 ,  H01L21/441 ,  H01L21/425 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

Abstract translation: 半导体器件通过以下方法制造。 在第一栅电极和第一绝缘膜上形成第一氧化物半导体膜，在第一氧化物半导体膜上添加氧，然后在第一氧化物半导体膜上形成第二氧化物半导体膜。 然后进行热处理。 接下来，蚀刻第一绝缘膜的一部分，第一氧化物半导体膜的一部分和第二氧化物半导体膜的一部分，以形成具有突起的第一栅极绝缘膜。 接着，在第二氧化物半导体膜上形成一对电极，在第二氧化物半导体膜和一对电极上形成第三氧化物半导体膜。 然后，在第三氧化物半导体膜上形成第二栅极绝缘膜，在第二栅极绝缘膜上形成第二栅电极。

公开(公告)号：US12068198B2

公开(公告)日：2024-08-20

申请号：US17605187

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Naoto Yamade ,  Takashi Hamada ,  Hiroki Komagata

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/28 ,  H01L29/66 ,  H01L27/088 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/2253 ,  H01L21/28185 ,  H01L29/6675 ,  H01L27/088 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

公开(公告)号：US11955538B2

公开(公告)日：2024-04-09

申请号：US18135793

申请日：2023-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Naoto Yamade ,  Hiroshi Fujiki ,  Tomoaki Moriwaka ,  Shunsuke Kimura

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/49

CPC classification number: H01L29/66969 ,  H01L29/1054 ,  H01L29/4966

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US10249651B2

公开(公告)日：2019-04-02

申请号：US15911708

申请日：2018-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L21/02

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.