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    Semiconductor device
    11.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09105734B2

    公开(公告)日：2015-08-11

    申请号：US14202737

    申请日：2014-03-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu

    IPC: H01L27/085 ,  H01L29/786

    CPC classification number: H01L29/78693 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

    Abstract translation: 半导体器件包括：基底绝缘膜，包括硅，在基底绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，与栅极绝缘膜接触并与至少氧化物重叠的栅极; 半导体膜，以及与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括从与基底绝缘膜的界面朝向氧化物半导体膜的内部分布的硅浓度低于或等于1.0at的区域。 ％。 晶体部分至少包括在该区域中。

    Semiconductor device and method for manufacturing the same
    12.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09040985B2

    公开(公告)日：2015-05-26

    申请号：US14331460

    申请日：2014-07-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

    IPC: H01L29/16 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

    CPC classification number: H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

    Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

    Abstract translation: 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氧氮化物膜的氧化物半导体层形成。

    Semiconductor device and electronic device
    13.
    发明授权
    Semiconductor device and electronic device 有权
    半导体器件和电子器件

    公开(公告)号：US08952380B2

    公开(公告)日：2015-02-10

    申请号：US13657165

    申请日：2012-10-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu

    IPC: H01L29/10 ,  H01L29/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/42376 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

    Abstract translation: 抑制包括氧化物半导体的半导体器件中的导通电流的降低。 半导体器件包括含有硅的绝缘膜，绝缘膜上的氧化物半导体膜，在氧化物半导体膜上含有硅的栅极绝缘膜，位于栅极绝缘膜之上并与至少氧化物半导体膜重叠的栅电极 ，以及与氧化物半导体膜电连接的源电极和漏电极。 在半导体器件中，与至少栅电极重叠的氧化物半导体膜包括从绝缘膜的界面分布的硅的浓度低于或等于1.1at的区域。 ％。 此外，除了该区域之外，氧化物半导体膜的剩余部分中所含的硅的浓度低于该区域中所含的硅的浓度。

    Semiconductor device and method for manufacturing the same
    14.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08785929B2

    公开(公告)日：2014-07-22

    申请号：US13926276

    申请日：2013-06-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

    IPC: H01L29/786

    CPC classification number: H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

    Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

    Abstract translation: 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氧氮化物膜的氧化物半导体层形成。

    Semiconductor device
    17.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09680028B2

    公开(公告)日：2017-06-13

    申请号：US14795592

    申请日：2015-07-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

    Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

    Semiconductor device
    18.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09087908B2

    公开(公告)日：2015-07-21

    申请号：US14255124

    申请日：2014-04-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

    IPC: H01L31/062 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

    Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

    Abstract translation: 包含在栅极绝缘膜附近的氧化物半导体膜中的杂质元素的浓度降低。 此外，提高了栅极绝缘膜附近的氧化物半导体膜的结晶度。 半导体器件包括在氧化物半导体膜上的衬底，源电极和漏电极上的氧化物半导体膜，包含含氧化物的氧化物并形成在氧化物半导体膜上的栅极绝缘膜，以及位于氧化物半导体膜上方的栅电极 栅极绝缘膜。 氧化物半导体膜包括硅的浓度低于或等于1.0at。的区域。 ％，并且至少该区域包括晶体部分。

    Method for manufacturing semiconductor device
    19.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09054134B2

    公开(公告)日：2015-06-09

    申请号：US14202670

    申请日：2014-03-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

    IPC: H01L21/00 ,  H01L21/336 ,  H01L27/108 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

    Abstract translation: 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

    Thin film transistor
    20.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08604481B2

    公开(公告)日：2013-12-10

    申请号：US13633900

    申请日：2012-10-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hidekazu Miyairi ,  Takeyoshi Watabe ,  Takashi Shimazu

    IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

    CPC classification number: H01L29/78669 ,  H01L27/1288 ,  H01L29/78678 ,  H01L29/78696 ,  H01L51/52

    Abstract: A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.

    Abstract translation: 薄膜晶体管包括覆盖栅电极的栅极绝缘层，与栅极绝缘层接触的半导体层和与半导体层的一部分接触并形成源极区和漏极区的杂质半导体层。 半导体层包括形成在栅极绝缘层上的微晶半导体层和含有与微晶半导体层接触的氮的微晶半导体区域。 可以以高生产率制造截止电流小且导通电流大的薄膜晶体管。

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