公开(公告)号：US10804409B2

公开(公告)日：2020-10-13

申请号：US16158478

申请日：2018-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US09530872B2

公开(公告)日：2016-12-27

申请号：US14146093

申请日：2014-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

公开(公告)号：US09224838B2

公开(公告)日：2015-12-29

申请号：US14260461

申请日：2014-04-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/66 ,  C23C14/08 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

Abstract: An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

Abstract translation: 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US08969130B2

公开(公告)日：2015-03-03

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Erika Takahashi ,  Yuki Imoto ,  Yuhei Sato

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/36 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放出的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。

公开(公告)号：US11217703B2

公开(公告)日：2022-01-04

申请号：US16905120

申请日：2020-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Toriumi ,  Takashi Hamada ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Ryunosuke Honda ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  H01L29/417 ,  H01L27/12 ,  H01L27/146 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/423 ,  H01L21/822

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

公开(公告)号：US10693013B2

公开(公告)日：2020-06-23

申请号：US15091009

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Toriumi ,  Takashi Hamada ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Ryunosuke Honda ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  H01L29/417 ,  H01L27/12 ,  H01L27/146 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/423 ,  H01L21/822

Abstract: A minute transistor with low parasitic capacitance, high frequency characteristics, favorable electrical characteristics, stable electrical characteristics, and low off-state current is provided. A semiconductor device includes a semiconductor over a substrate, a source and a drain over the semiconductor, a first insulator over the source and the drain, a second insulator over the semiconductor, a third insulator in contact with a side surface of the first insulator and over the second insulator, and a gate over the third insulator. The semiconductor includes a first region overlapping with the source, a second region overlapping with the drain, and a third region overlapping with the gate. The length between a top surface of the third region of the semiconductor and a bottom surface of the gate is longer than the length between the first region and the third region.

公开(公告)号：US10103272B2

公开(公告)日：2018-10-16

申请号：US14886723

申请日：2015-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US10008588B2

公开(公告)日：2018-06-26

申请号：US14583416

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Imoto ,  Yuhei Sato

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02658 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7869

Abstract: The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.

公开(公告)号：US09443888B2

公开(公告)日：2016-09-13

申请号：US14461938

申请日：2014-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Abstract translation: 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。