公开(公告)号：US11658264B2

公开(公告)日：2023-05-23

申请号：US17025254

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong Min ,  Jun Ho Yoon ,  Woo Cheol Gwak ,  Jin Woo Huh ,  Yong Hyun Baek

IPC: H01L33/10

CPC classification number: H01L33/10

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

公开(公告)号：US11621370B2

公开(公告)日：2023-04-04

申请号：US17328498

申请日：2021-05-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  G09G3/32 ,  G09G3/20 ,  F21S6/00 ,  F21Y115/10 ,  F21W107/30 ,  F21W106/00

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

公开(公告)号：US20160056334A1

公开(公告)日：2016-02-25

申请号：US14830651

申请日：2015-08-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sam Seok Jang ,  Woo Chul Kwak ,  Kyung Hae Kim ,  Jung Whan Jung ,  Yong Hyun Baek

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/325

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Abstract translation: 提供发光器件以包括设置在p型半导体层和有源层之间的n型半导体层，p型半导体层，有源层和电子阻挡层。 p型半导体层包括空穴注入层，p型接触层和空穴传输层。 空穴传输层包括多个未掺杂层和设置在未掺杂层之间的至少一个中间掺杂层。 未掺杂层中的至少一个包括空穴浓度随着与空穴注入层或p型接触层的距离的增加而减小的区域，并且中间掺杂层被设置为至少部分地与孔的区域重叠 传输层，空穴浓度为p型接触层的空穴浓度的62％〜87％的区域。