公开(公告)号：US20170309775A1

公开(公告)日：2017-10-26

申请号：US15643403

申请日：2017-07-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L21/02

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US20160056334A1

公开(公告)日：2016-02-25

申请号：US14830651

申请日：2015-08-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sam Seok Jang ,  Woo Chul Kwak ,  Kyung Hae Kim ,  Jung Whan Jung ,  Yong Hyun Baek

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/325

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Abstract translation: 提供发光器件以包括设置在p型半导体层和有源层之间的n型半导体层，p型半导体层，有源层和电子阻挡层。 p型半导体层包括空穴注入层，p型接触层和空穴传输层。 空穴传输层包括多个未掺杂层和设置在未掺杂层之间的至少一个中间掺杂层。 未掺杂层中的至少一个包括空穴浓度随着与空穴注入层或p型接触层的距离的增加而减小的区域，并且中间掺杂层被设置为至少部分地与孔的区域重叠 传输层，空穴浓度为p型接触层的空穴浓度的62％〜87％的区域。

公开(公告)号：US10361339B2

公开(公告)日：2019-07-23

申请号：US15526724

申请日：2015-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jung Whan Jung ,  Kyung Hae Kim ,  Woo Chul Kwak ,  Sam Seok Jang

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

Abstract: A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive type semiconductor layer positioned on the lower nitride layer; a second conductive type semiconductor layer positioned on the first conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers.

公开(公告)号：US10109767B2

公开(公告)日：2018-10-23

申请号：US14599300

申请日：2015-01-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Hae Kim ,  Jung Whan Jung

IPC: H01L33/06 ,  H01L33/04 ,  H01L33/02

Abstract: A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.

公开(公告)号：US09799800B2

公开(公告)日：2017-10-24

申请号：US14830651

申请日：2015-08-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sam Seok Jang ,  Woo Chul Kwak ,  Kyung Hae Kim ,  Jung Whan Jung ,  Yong Hyun Baek

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/325

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

公开(公告)号：US09716210B2

公开(公告)日：2017-07-25

申请号：US14690036

申请日：2015-04-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L21/02

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US10418514B2

公开(公告)日：2019-09-17

申请号：US15643403

申请日：2017-07-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L21/02

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US20180047871A1

公开(公告)日：2018-02-15

申请号：US15526724

申请日：2015-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jung Whan Jung ,  Kyung Hae Kim ,  Woo chul Kwak ,  Sam Seok Jang

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/20 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

Abstract: A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive type semiconductor layer positioned on the lower nitride layer; a second conductive type semiconductor layer positioned on the first conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers.

公开(公告)号：US20150340562A1

公开(公告)日：2015-11-26

申请号：US14715286

申请日：2015-05-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Min Kyu Kim ,  Jung Whan Jung ,  Kyung Hae Kim ,  Woo Chul Kwak

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/38

Abstract: Embodiments provide a method of growing a p-type nitride semiconductor, and a light emitting device fabricated using the same. The method of growing a p-type nitride semiconductor includes growing a p-type nitride semiconductor layer on a growth substrate by introducing a group III element source, a group V element source, and a p-type dopant into a chamber at a first temperature; and cooling the interior of the chamber from the first temperature to a second temperature, wherein the p-type dopant is introduced into the chamber for at least some part of the cooling of the interior of the chamber from the first temperature to the second temperature. According to the present disclosed technology, it is possible to prevent diffusion of the p-type dopant from a p-type nitride semiconductor layer into the chamber.

Abstract translation: 实施例提供了生长p型氮化物半导体的方法和使用其制造的发光器件。 生长p型氮化物半导体的方法包括通过在第一温度下将III族元素源，V族元素源和p型掺杂剂引入到室中来生长生长衬底上的p型氮化物半导体层 ; 以及将所述室的内部从所述第一温度冷却至第二温度，其中所述p型掺杂剂被引入所述室中，用于将所述室内部的至少一部分冷却从所述第一温度升至所述第二温度。 根据本公开的技术，可以防止p型掺杂剂从p型氮化物半导体层扩散到室中。

公开(公告)号：US20150311382A1

公开(公告)日：2015-10-29

申请号：US14599300

申请日：2015-01-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Hae Kim ,  Jung Whan Jung

IPC: H01L33/00 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/04

Abstract: A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.

Abstract translation: 发光二极管包括：n型氮化物半导体层; n型氮化物半导体层上的有源层; 以及有源层上的p型氮化物半导体层。 n型氮化物半导体层包括：n型氮化物层; n型氮化物层上的第一中间层; 在第一中间层上的n型调制掺杂层。 发光二极管包括n型调制掺杂层上的第二中间层。 第二中间层包括n型掺杂浓度较高的n型掺杂浓度的次级层，n型掺杂浓度为n型掺杂浓度。