公开(公告)号：US12165886B2

公开(公告)日：2024-12-10

申请号：US17460566

申请日：2021-08-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes: a stage; a plurality of holders configured to hold a substrate; a liquid supply configured to supply a liquid to a surface of the substrate opposite to the stage; a cooler configured to supply a cooling gas to a space between the stage and the substrate; a mover configured to change a distance between the stage and the substrate; and a controller configured to control the cooler and the mover. The controller performs a cooling process that at least includes a supercooling process and a freezing process (solid-liquid phase), and a thawing process after the cooling process. In the cooling process, the controller controls the mover to set the distance to a first distance, and in the thawing process, the controller controls the mover to set the distance to a second distance longer than the first distance.

公开(公告)号：US10734217B2

公开(公告)日：2020-08-04

申请号：US15671529

申请日：2017-08-08

Applicant: Shibaura Mechatronics Corporation

Inventor： Masaya Kamiya ,  Kensuke Demura ,  Daisuke Matsushima ,  Haruka Nakano ,  Ivan Petrov Ganachev

IPC: H01L21/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687 ,  B08B3/10 ,  B08B7/00 ,  G03F7/40 ,  G03F7/42

Abstract: A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.

公开(公告)号：US10668496B2

公开(公告)日：2020-06-02

申请号：US15717435

申请日：2017-09-27

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakamura ,  Kensuke Demura ,  Daisuke Matsushima ,  Masayuki Hatano ,  Hiroyuki Kashiwagi

IPC: B05C5/02 ,  B29C33/38 ,  G03F7/00 ,  B29C59/02

Abstract: According to one embodiment, an imprint template manufacturing apparatus includes a stage, a supply head, a moving mechanism, and a controller. The stage supports a template that includes a base having a main surface, and a convex portion provided on the main surface and having an end surface on a side opposite to the main surface. A concavo-convex pattern to be pressed against a liquid material to be transferred is formed on the end surface. The supply head supplies a liquid-repellent material in a liquid form to the template on the stage. The moving mechanism moves the stage and the supply head relative to each other in a direction along the stage. The controller controls the supply head and the moving mechanism such that the supply head applies the liquid-repellent material to at least the side surface of the convex portion so as to avoid the concavo-convex pattern.

公开(公告)号：US10111313B2

公开(公告)日：2018-10-23

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takeharu Motokawa ,  Tokuhisa Ooiwa ,  Kensuke Demura ,  Tomoaki Yoshimori ,  Makoto Karyu ,  Yoshihisa Kase ,  Hidehito Azumano

IPC: H01L21/00 ,  C23C16/00 ,  H05H1/46 ,  H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

公开(公告)号：US09513557B2

公开(公告)日：2016-12-06

申请号：US14635183

申请日：2015-03-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F7/20 ,  G03F1/24

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

公开(公告)号：US20150177624A1

公开(公告)日：2015-06-25

申请号：US14635183

申请日：2015-03-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F7/20

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract translation: 根据一个实施例，一种用于制造反射掩模的方法包括：在基板的主表面上形成反射层; 在反射层上形成含有钌的覆盖层; 在覆盖层上形成吸收层; 在吸收层中形成图案区域; 去除用于形成图案区域的第一抗蚀剂掩模; 以及在吸收层，封盖层和反射层中形成围绕图案区域的遮光区域。 去除形成图案区域中使用的第一抗蚀剂掩模包括：使用氨气和氮气的混合气体或仅仅氨气进行干灰化处理。

公开(公告)号：US12138671B2

公开(公告)日：2024-11-12

申请号：US17181227

申请日：2021-02-22

Applicant: Shibaura Mechatronics Corporation

Inventor： Minami Nakamura ,  Daisuke Matsushima ,  Kensuke Demura

IPC: B08B7/00 ,  B08B3/10 ,  B08B7/04 ,  G03F7/00 ,  G03F7/20 ,  H01L21/67 ,  H01L21/687 ,  G03F1/82

Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand side, a detector configured to detect a state of the liquid on the surface of the substrate, and a controller controlling at least one of a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, obtains a temperature of the liquid in the supercooled state at a start of freezing, and is configured to calculate a removal ratio of a contamination.

公开(公告)号：US12097541B2

公开(公告)日：2024-09-24

申请号：US17469876

申请日：2021-09-09

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: B08B3/10 ,  B08B3/04 ,  B08B7/00 ,  B08B13/00 ,  H01L21/687

CPC classification number: B08B3/10 ,  B08B3/041 ,  B08B7/0092 ,  B08B13/00 ,  H01L21/6875

Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes a stage having a substantially disc-shaped form and including a hole in a center thereof; a roller that contacts a side surface of the stage and rotates the stage; a first liquid nozzle that supplies a first liquid to a first surface of the substrate; a first driver that moves a position of the first liquid nozzle; a second liquid nozzle that supplies a second liquid from the hole of the stage to a second surface of the substrate; a second driver that moves a position of the second liquid nozzle; a cooling nozzle that supplies a cooling gas from the hole of the stage to the second surface; a third driver that moves a position of the cooling nozzle; and a controller that controls the first driver, the second driver, and the third driver.

公开(公告)号：US12074055B2

公开(公告)日：2024-08-27

申请号：US17665657

申请日：2022-02-07

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaya Kamiya ,  Kensuke Demura

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68764 ,  H01L21/67051 ,  H01L21/67248

Abstract: A substrate treatment device according to an embodiment includes a placement part that includes a placement platform on which a substrate is placeable and that is configured to rotate the placed substrate, a cooling nozzle configured to supply a cooling gas to a space between the placement platform and the substrate, a liquid supplier configured to supply a liquid to a surface of the substrate opposite to the placement platform side, and a dispersion plate located at a discharge side of the cooling gas of the cooling nozzle. The dispersion plate includes a first hole extending through the dispersion plate in a thickness direction. The first hole is located at a position overlapping a central axis of the cooling nozzle when viewed along a direction along the central axis of the cooling nozzle.

公开(公告)号：US11948812B2

公开(公告)日：2024-04-02

申请号：US17321639

申请日：2021-05-17

Applicant: Shibaura Mechatronics Corporation

Inventor： Kensuke Demura

IPC: H01L21/67 ,  B08B3/04 ,  F25B13/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/67051 ,  B08B3/04 ,  F25B13/00 ,  H01J37/32724 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67248 ,  H01J37/321 ,  H01J2237/002 ,  H01J2237/3341

Abstract: According to one embodiment, a cooling device includes a flow path configured to flow a refrigerant, a condenser provided in the flow path, a heat exchanger provided in the flow path, a compressor provided in the flow path between the condenser and the heat exchanger, a cooler cooling the refrigerant flowing from the condenser into the heat exchanger, a gas cooling part supplying a gas to the heat exchanger, and configured to cool the gas by exchanging heat with the refrigerant, a first thermometer configured to detect a temperature of the cooled gas, a second thermometer configured to detect a temperature of the refrigerant flowing into the heat exchanger, and a first controller configured to control the temperature of the cooled refrigerant flowing into the heat exchanger by the cooler. The first controller controls the temperature of the cooled refrigerant by switching a first control and a second control.