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    Substrate treatment device
    3.
    发明授权
    Substrate treatment device 有权

    公开(公告)号：US12109597B2

    公开(公告)日：2024-10-08

    申请号：US17230152

    申请日：2021-04-14

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Satoshi Nakamura ,  Masaya Kamiya ,  Minami Nakamura

    IPC: B08B7/00 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10 ,  F25C1/12 ,  H01L21/67

    CPC classification number: B08B7/0014 ,  B08B3/041 ,  B08B3/08 ,  B08B3/10 ,  F25C1/12 ,  H01L21/67028

    Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate the substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a first liquid supplier configured to supply a first liquid on a surface of the substrate, a second liquid supplier configured to supply a second liquid on the surface, and a controller controlling rotation of the substrate, supply of the cooling gas, the first and second liquids. The controller performs a preliminary process of supplying the second liquid on the surface, and supplying the cooling gas into the space, a liquid film forming process by supplying the first liquid toward the surface after the preliminary process, a supercooling process of the liquid film on the surface, and a freezing process of at least a part of the liquid film on the surface.

    Bonding Apparatus and Method for Manufacturing Bonded Substrate
    4.
    发明申请
    Bonding Apparatus and Method for Manufacturing Bonded Substrate 有权
    接合装置和制造粘结基板的方法

    公开(公告)号：US20160009070A1

    公开(公告)日：2016-01-14

    申请号：US14859627

    申请日：2015-09-21

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Konosuke Hayashi ,  Daisuke Matsushima

    IPC: B32B41/00 ,  B32B37/18 ,  B32B37/10

    CPC classification number: B32B41/00 ,  B23K20/02 ,  B23K20/233 ,  B23K20/24 ,  B23K20/26 ,  B23K2101/40 ,  B32B37/003 ,  B32B37/10 ,  B32B37/18 ,  B32B2309/72 ,  B32B2313/00 ,  B32B2315/08 ,  B32B2457/14 ,  H01L21/67092

    Abstract: According to the embodiment of the present invention, a bonding apparatus comprising: a substrate holder holding the second substrate; a pusher pushing a back surface of the second substrate; a substrate support unit including a support talon supporting a circumferential edge portion of the first substrate to oppose the second substrate with a prescribed spacing between the second substrate and the circumferential edge portion of the first substrate; and a controller controlling a lifting/lowering operation of the pusher, the pusher pushing one prescribed point of the back surface of the second substrate, the one prescribed point corresponding to a position where a distance between a bonding surface of the first substrate and a bonding surface of the second substrate is shorter than a distance from the circumferential edge portion of the bonding surface of the first substrate to the bonding surface of the second substrate.

    Abstract translation: 根据本发明的实施例，一种接合装置，包括：保持第二基板的基板保持件; 推动第二基板的后表面的推动器; 基板支撑单元，其包括支撑爪，所述支撑爪支撑所述第一基板的周缘部分，以在所述第二基板与所述第一基板的周缘部之间以规定的间隔与所述第二基板相对; 以及控制器，其控制所述推动器的提升/降低操作，所述推动器推动所述第二基板的背面的一个规定点，所述一个规定点对应于所述第一基板的接合面与所述第二基板的接合面之间的距离 第二基板的表面比从第一基板的接合面的周缘部到第二基板的接合面的距离短。

    Substrate processing apparatus and substrate processing method
    5.
    发明授权
    Substrate processing apparatus and substrate processing method 有权

    公开(公告)号：US12165886B2

    公开(公告)日：2024-12-10

    申请号：US17460566

    申请日：2021-08-30

    Applicant: SHIBAURA MECHATRONICS CORPORATION

    Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

    IPC: H01L21/67 ,  H01L21/687

    Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes: a stage; a plurality of holders configured to hold a substrate; a liquid supply configured to supply a liquid to a surface of the substrate opposite to the stage; a cooler configured to supply a cooling gas to a space between the stage and the substrate; a mover configured to change a distance between the stage and the substrate; and a controller configured to control the cooler and the mover. The controller performs a cooling process that at least includes a supercooling process and a freezing process (solid-liquid phase), and a thawing process after the cooling process. In the cooling process, the controller controls the mover to set the distance to a first distance, and in the thawing process, the controller controls the mover to set the distance to a second distance longer than the first distance.

    Imprint template treatment apparatus
    7.
    发明授权
    Imprint template treatment apparatus 审中-公开

    公开(公告)号：US10668496B2

    公开(公告)日：2020-06-02

    申请号：US15717435

    申请日：2017-09-27

    Applicant: SHIBAURA MECHATRONICS CORPORATION ,  TOSHIBA MEMORY CORPORATION

    Inventor： Satoshi Nakamura ,  Kensuke Demura ,  Daisuke Matsushima ,  Masayuki Hatano ,  Hiroyuki Kashiwagi

    IPC: B05C5/02 ,  B29C33/38 ,  G03F7/00 ,  B29C59/02

    Abstract: According to one embodiment, an imprint template manufacturing apparatus includes a stage, a supply head, a moving mechanism, and a controller. The stage supports a template that includes a base having a main surface, and a convex portion provided on the main surface and having an end surface on a side opposite to the main surface. A concavo-convex pattern to be pressed against a liquid material to be transferred is formed on the end surface. The supply head supplies a liquid-repellent material in a liquid form to the template on the stage. The moving mechanism moves the stage and the supply head relative to each other in a direction along the stage. The controller controls the supply head and the moving mechanism such that the supply head applies the liquid-repellent material to at least the side surface of the convex portion so as to avoid the concavo-convex pattern.

    Substrate treatment device
    8.
    发明授权
    Substrate treatment device 有权

    公开(公告)号：US12005482B2

    公开(公告)日：2024-06-11

    申请号：US17195924

    申请日：2021-03-09

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

    IPC: H01L21/67 ,  B08B3/10 ,  B08B7/00

    CPC classification number: B08B7/0092 ,  B08B3/10 ,  H01L21/67051

    Abstract: According to one embodiment, q substrate treatment device includes a placement stand, a plurality of support portions, a cooling part, a liquid supplier, and at least one protrusion. The placement stand has a plate shape, and is configured to rotate. The support portions are provided on one surface of the placement stand and configured to support a substrate. The cooling part is configured to supply a cooling gas into a space between the placement stand and a back surface of the substrate supported by the support portions. The liquid supplier is configured to supply a liquid onto a surface of the substrate. At least one protrusion is provided on the one surface of the placement stand and extends along a boundary line of a region where the substrate is provided in a plan view.

    Substrate treatment device
    9.
    发明授权
    Substrate treatment device 有权

    公开(公告)号：US11784040B2

    公开(公告)日：2023-10-10

    申请号：US17181264

    申请日：2021-02-22

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

    IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67

    CPC classification number: H01L21/02057 ,  B08B7/0092 ,  H01L21/02052 ,  H01L21/67023

    Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

    Reflective mask cleaning apparatus and reflective mask cleaning method
    10.
    发明授权
    Reflective mask cleaning apparatus and reflective mask cleaning method 有权

    公开(公告)号：US11609491B2

    公开(公告)日：2023-03-21

    申请号：US16715044

    申请日：2019-12-16

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Masafumi Suzuki ,  Satoshi Nakamura

    IPC: G03F1/24 ,  G03F1/82 ,  B08B7/00

    Abstract: A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
    A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.

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