公开(公告)号：US20140357093A1

公开(公告)日：2014-12-04

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/268 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

Abstract translation: 本发明涉及一种用于稳定接合界面的方法，该接合界面位于用于电子学，光学和/或光电子学领域的结构内，并且包括掩埋在有源层和接收器衬底之间的氧化物层，所述接合界面已被 通过分子粘附获得。 根据本发明，该方法还包括用激光提供的光能通量照射该结构，使得朝向结构的通量被能量转换层吸收并在该层中被转换成热 这种热量向结合界面扩散到结构中，从而稳定接合界面。

公开(公告)号：US09929040B2

公开(公告)日：2018-03-27

申请号：US15083725

申请日：2016-03-29

Applicant: Soitec

Inventor： Carole David ,  Anne-Sophie Cocchi

IPC: H01L29/20 ,  H01L21/36 ,  H01L21/762 ,  H01L21/324 ,  H01L29/51

CPC classification number: H01L21/76251 ,  H01L21/3247 ,  H01L21/76254 ,  H01L21/76281 ,  H01L29/51 ,  H01L29/511 ,  H01L2224/11849 ,  H01L2224/11901

Abstract: A process is used for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate. The process comprises providing an intermediate structure including an upper layer, the dielectric layer and the carrier substrate, and finishing the intermediate structure to form the final structure by performing a treatment nonuniformly modifying the thickness of the dielectric layer following a predetermined dissolution profile. The dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.

公开(公告)号：US20160351438A1

公开(公告)日：2016-12-01

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabell Guerin

IPC: H01L21/762 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

Abstract translation: 将被称为供体衬底的单晶衬底的层转移到接收器衬底上的方法包括：提供单晶施主衬底，具有沿晶体的第一方向取向的凹槽的衬底和包围晶体的弱区域 要转移的层，将单晶供体基板接合到接收器基板上，供体基板的与弱磁区相对的相对于待转移层的主表面在接合界面处，以及供体的分离 基底沿弱点区域。 在该方法中，施主衬底在与接收器衬底接合的主表面上具有基本上沿与第一方向不同的晶体的第二方向延伸的原子台阶阵列。

公开(公告)号：US20160293476A1

公开(公告)日：2016-10-06

申请号：US15083725

申请日：2016-03-29

Applicant: Soitec

Inventor： Carole David ,  Anne-Sophie Cocchi

IPC: H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/3247 ,  H01L21/76254 ,  H01L21/76281 ,  H01L29/51 ,  H01L29/511 ,  H01L2224/11849 ,  H01L2224/11901

Abstract: A process is used for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate. The process comprises providing an intermediate structure including an upper layer, the dielectric layer and the carrier substrate, and finishing the intermediate structure to form the final structure by performing a treatment nonuniformly modifying the thickness of the dielectric layer following a predetermined dissolution profile. The dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.

Abstract translation: 一种制造最终结构的方法被用于连续地包括有用的半导体层，电介质层和载体衬底。 该方法包括提供包括上层，电介质层和载体衬底的中间结构，并且通过执行按照预定溶解曲线不均匀地改变电介质层的厚度的处理来完成中间结构以形成最终结构。 中间结构的电介质层具有与预定溶解曲线互补的厚度分布。

公开(公告)号：US20130273712A1

公开(公告)日：2013-10-17

申请号：US13827618

申请日：2013-03-14

Applicant: SOITEC

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01L21/76254

Abstract: A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2 respectively, wherein T1 is less than or equal to T2, T1 is between 1200° C. and 1300° C., T2 is between 1240° C. and 1300° C., and when T1 is below 1240° C., then T2 is above 1240° C.

Abstract translation: 一种用于制造绝缘体上硅结构的方法包括在硅供体衬底上形成第一氧化物层，在支撑衬底上形成第二氧化物层，并在供体衬底中形成弱化区。 施主衬底通过在硅供体衬底上的第一氧化物层和支撑衬底上的第二氧化物层之间建立直接接触并在其间建立直接的氧化物 - 氧化物键而与支撑衬底结合。 施主衬底沿着弱化区分裂以形成绝缘体上硅结构，并且绝缘体上硅结构分别在温度T1和T2下进行两次连续的快速热退火处理，其中T1小于或等于 到T2时，T1在1200℃和1300℃之间，T2在1240℃和1300℃之间，当T1低于1240℃时，则T2高于1240℃。

公开(公告)号：US20130207244A1

公开(公告)日：2013-08-15

申请号：US13629093

申请日：2012-09-27

Applicant: SOITEC

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/3105 ,  H01L21/7624 ,  H01L21/76251 ,  H01L29/06

Abstract: Embodiments of to invention relate to a process for fabricating a silicon-on-insulator structure comprising the following steps: providing a donor substrate and a support substrate, only one of the substrates being covered with an oxide layer; forming, in the donor substrate, a weak zone; plasma activating the oxide layer; bonding the donor substrate to the support substrate in a partial vacuum; implementing a bond-strengthening anneal at a temperature of 350° C. or less causing the donor substrate to cleave along the weak zone; and carrying out a heat treatment at a temperature above 900° C. A transition from the temperature of the bond-strengthening anneal to the temperature of the heat treatment may be achieved at a ramp rate above 10° C./s.

Abstract translation: 本发明的实施例涉及一种用于制造绝缘体上硅结构的方法，包括以下步骤：提供施主衬底和支撑衬底，只有一个衬底被氧化物层覆盖; 在施主衬底中形成弱区; 等离子体激活氧化层; 在部分真空中将施主衬底结合到支撑衬底; 在350℃或更低的温度下进行结合强化退火，导致供体基体沿弱区裂开; 并在高于900℃的温度下进行热处理。从加强退火的温度到热处理的温度的转变可以以高于10℃/秒的斜率进行。