公开(公告)号：US11932933B2

公开(公告)日：2024-03-19

申请号：US17814796

申请日：2022-07-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  HunTeak Lee ,  Sell Jung ,  HeeSoo Lee

IPC: C23C14/50 ,  C23C14/34 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552

CPC classification number: C23C14/50 ,  C23C14/34 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025

Abstract: A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

公开(公告)号：US11894314B2

公开(公告)日：2024-02-06

申请号：US17447336

申请日：2021-09-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L23/552 ,  H01L23/31 ,  H01Q1/40 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/49822 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US20230268289A1

公开(公告)日：2023-08-24

申请号：US18309951

申请日：2023-05-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L21/56 ,  H01L24/09 ,  H01L21/78 ,  H01L24/17

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US11735539B2

公开(公告)日：2023-08-22

申请号：US17092449

申请日：2020-11-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Choon Heung Lee ,  JunHo Ye

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01Q1/22 ,  H01L23/552

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/5386 ,  H01L23/552 ,  H01Q1/2283 ,  H01L2223/6677

Abstract: A semiconductor device has an electronic component assembly, and a plurality of discrete antenna modules disposed over the electronic component assembly. Each discrete antenna module is capable of providing RF communication for the electronic component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electronic components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electronic component assembly.

公开(公告)号：US20230170242A1

公开(公告)日：2023-06-01

申请号：US17457155

申请日：2021-12-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HyeonChul Lee ,  HunTeak Lee ,  HyunSu Tak ,  Wanil Lee ,  InHo Seo

IPC: H01L21/683 ,  H01L21/77 ,  H01L21/56

CPC classification number: H01L21/6835 ,  H01L21/77 ,  H01L21/561

Abstract: A semiconductor device is manufactured using a support base and a filling material formed on the support base. The filling material can be a plurality of protrusions or penetrable film. The protrusions are attached to the support base with an adhesive. The protrusions have a variety of shapes such as square frustum, conical frustum, three-sided pyramid with a flat top, four-sided rectangular body, and elongated square frustum. A semiconductor wafer is disposed over the support base with the filling material extending into openings in the semiconductor wafer. The openings in the semiconductor wafer can have slanted sidewalls, or a more complex shape such as ledges and vertical projections. The filling material may substantially fill the openings in the semiconductor wafer. The protrusions may partially fill the openings in the semiconductor wafer. The protrusions occupy at least a center of the openings in the semiconductor wafer.

公开(公告)号：US20220148983A1

公开(公告)日：2022-05-12

申请号：US17092449

申请日：2020-11-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Choon Heung Lee ,  JunHo Ye

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01Q1/22

Abstract: A semiconductor device has an electronic component assembly, and a plurality of discrete antenna modules disposed over the electronic component assembly. Each discrete antenna module is capable of providing RF communication for the electronic component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electronic components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electronic component assembly.

公开(公告)号：US20190088621A1

公开(公告)日：2019-03-21

申请号：US15706584

申请日：2017-09-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  SungSoo Kim ,  HeeSoo Lee

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00

Abstract: A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

公开(公告)号：US12211803B2

公开(公告)日：2025-01-28

申请号：US18390051

申请日：2023-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/24 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US20230154864A1

公开(公告)日：2023-05-18

申请号：US18155878

申请日：2023-01-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L21/568 ,  H01L23/66 ,  H01L2223/6677

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20230074430A1

公开(公告)日：2023-03-09

申请号：US17447029

申请日：2021-09-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/60 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.