公开(公告)号：US20160099200A1

公开(公告)日：2016-04-07

申请号：US14750920

申请日：2015-06-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Laura Ceriati ,  Paolo Crema ,  Agatino Minotti

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L24/32 ,  C22C21/02 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/49579 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/13091 ,  H01L2924/17724 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Described herein is a semiconductor device provided with: a die of semiconductor material; a lead frame, defining a support plate, which is designed to carry the die, and leads, which are designed to be electrically coupled to the die; and a package, of encapsulating material, which is designed to encapsulate the die and partially coming out of which are the leads. The lead frame has as constituent material an aluminum alloy comprising a percentage of silicon ranging between 1% and 1.5%.

Abstract translation: 这里描述的是一种半导体器件，其具有：半导体材料的管芯; 引线框架，限定被设计成承载芯片的支撑板和被设计成电耦合到管芯的引线; 以及封装材料的封装，其被设计成封装模具并部分地从其中引出。 引线框架具有作为构成材料的铝合金，其包含1％至1.5％之间的硅的百分比。

公开(公告)号：US12125803B2

公开(公告)日：2024-10-22

申请号：US18121145

申请日：2023-03-14

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Crema

IPC: H01L23/495 ,  B23K26/0622 ,  B23K26/354 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  B23K103/08

CPC classification number: H01L23/562 ,  B23K26/0622 ,  B23K26/354 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49582 ,  B23K2103/08

Abstract: A leadframe has a die pad area and an outer layer of a first metal having a first oxidation potential. The leadframe is placed in contact with a solution containing a second metal having a second oxidation potential, the second oxidation potential being more negative than the first oxidation potential. Radiation energy is then applied to the die pad area of the leadframe contacted with the solution to cause a local increase in temperature of the leadframe. As a result of the temperature increase, a layer of said second metal is selectively provided at the die pad area of the leadframe by a galvanic displacement reaction. An oxidation of the outer layer of the leadframe is then performed to provide an enhancing layer which counters device package delamination.

公开(公告)号：US11977190B2

公开(公告)日：2024-05-07

申请号：US16917517

申请日：2020-06-30

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Sara Loi ,  Paolo Crema ,  Alessandro Freguglia

IPC: G01T1/20 ,  G01T1/02

CPC classification number: G01T1/20184 ,  G01T1/023 ,  G01T1/2002 ,  G01T1/20187

Abstract: A device such as a dosimeter for detecting ionizing radiation, for example, X-ray radiation, in hospitals or the like. The device includes scintillator material configured to produce light as a result of radiation interacting with the scintillator material, and photoelectric conversion circuitry optically coupled to the scintillator material and configured to produce electrical signals via photoelectric conversion of light produced by the scintillator material. The device includes a plurality of photoelectric converters optically coupled with the scintillator material at spatially separated locations. The plurality of photoelectric converters thus produce respective electrical signals by photoelectric conversion of light produced by the scintillator material as a result of radiation interacting with the scintillator material. Improved energy linearity is thus facilitated while providing more efficient detection over the whole energy spectrum of radiation detected.

公开(公告)号：US11948806B2

公开(公告)日：2024-04-02

申请号：US17549280

申请日：2021-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Crema

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/4842 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49575

Abstract: In a method of manufacturing a multi-die semiconductor device, a metal leadframe includes a die pad and electrically-conductive leads arranged around the die pad. First and second semiconductor dice are arranged on the die pad. A laser-activatable material is disposed on the dice and leads, and a set of laser-activated lines is patterned, including a first subset coupling selected bonding pads of the dice to selected leads, a second subset coupling selected bonding pads amongst themselves, and a third subset coupling the lines in the second subset to at least one line in the first subset. A first metallic layer is deposited onto the laser-activated lines to provide first, second and third subsets of electrically-conductive lines. A second metallic layer is selectively deposited onto the first and second subsets by electroplating to provide first and second subsets of electrically-conductive tracks. The electrically-conductive lines in the third subset are selectively removed.

公开(公告)号：US11610849B2

公开(公告)日：2023-03-21

申请号：US17108187

申请日：2020-12-01

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Crema

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A leadframe has a die pad area and an outer layer of a first metal having a first oxidation potential. The leadframe is placed in contact with a solution containing a second metal having a second oxidation potential, the second oxidation potential being more negative than the first oxidation potential. Radiation energy is then applied to the die pad area of the leadframe contacted with the solution to cause a local increase in temperature of the leadframe. As a result of the temperature increase, a layer of said second metal is selectively provided at the die pad area of the leadframe by a galvanic displacement reaction. An oxidation of the outer layer of the leadframe is then performed to provide an enhancing layer which counters device package delamination.

公开(公告)号：US09461011B2

公开(公告)日：2016-10-04

申请号：US14079457

申请日：2013-11-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo Crema

IPC: B05D5/12 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L24/43 ,  H01L21/4821 ,  H01L2224/43 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An embodiment of a method and an apparatus for manufacturing lead frames are described. For example, a coating layer is formed on one or more predefined portions of the surface of the substrate of the lead frame by delimiting the predefined portions by means of screen printing. The employment of screen printing may allow obtaining large amounts of lead frames with excellent electronic and structural properties in a quick and cost-effective way.

Abstract translation: 描述用于制造引线框架的方法和装置的实施例。 例如，通过丝网印刷限定预定部分，在引线框架的基板的表面的一个或多个预定部分上形成涂层。 使用丝网印刷可以以快速和成本有效的方式获得具有优异电子和结构特性的大量引线框架。

公开(公告)号：US20140131819A1

公开(公告)日：2014-05-15

申请号：US14067402

申请日：2013-10-30

Applicant: STMicroelectronics S.r.l.

Inventor： Alex Gritti ,  Paolo Crema

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00261 ,  B81B3/0018 ,  B81B2201/0257 ,  B81B2207/093 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/035 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/15151 ,  H01L2924/00014

Abstract: A process for manufacturing a packaged microelectromechanical device includes: forming a lid having a face and a cavity open on the face; coating the face of the lid and walls of the cavity with a metal layer containing copper; and coating the metal layer with a protective layer.

Abstract translation: 一种用于制造包装的微机电装置的方法包括：形成具有面和在所述面上敞开的腔的盖; 用包含铜的金属层涂覆盖的表面和腔的壁; 并用保护层涂覆金属层。