公开(公告)号：US11107941B2

公开(公告)日：2021-08-31

申请号：US16292525

申请日：2019-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Sebastien Cremer ,  Nathalie Vulliet ,  Denis Pellissier-Tanon

IPC: H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US10014660B2

公开(公告)日：2018-07-03

申请号：US14827429

申请日：2015-08-17

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives ,  STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Thomas Ferrotti ,  Badhise Ben Bakir ,  Alain Chantre ,  Sebastien Cremer ,  Helene Duprez

IPC: H01S5/125 ,  H01S5/12 ,  H01S5/02 ,  H01S5/026 ,  H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/10 ,  H01S5/187 ,  H01S5/323 ,  G02B6/12 ,  G02B6/30 ,  G02B6/34

CPC classification number: H01S5/1237 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12121 ,  H01L2224/32 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  H01S2301/166

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).