公开(公告)号：US20140145251A1

公开(公告)日：2014-05-29

申请号：US14168167

申请日：2014-01-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Laurent Favennec ,  Arnaud Tournier ,  François Roy

IPC: H01L21/762 ,  H01L27/146

CPC classification number: H01L21/76224 ,  H01L21/76237 ,  H01L27/1463

Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.

Abstract translation: 一种结构，其包括在衬底中的至少一个DTI型绝缘沟槽，所述沟槽位于形成像素的衬底的至少一个有源区域的外围，所述绝缘沟槽包括填充有电介质材料的腔体， 该腔被由硼掺杂材料制成的层覆盖。

公开(公告)号：US10153318B2

公开(公告)日：2018-12-11

申请号：US15266405

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

公开(公告)号：US10090355B2

公开(公告)日：2018-10-02

申请号：US15266345

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/00 ,  H01L27/146 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

公开(公告)号：US09998699B2

公开(公告)日：2018-06-12

申请号：US15077023

申请日：2016-03-22

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Guyader ,  François Roy

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H04N5/353 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/3742 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/353 ,  H04N5/378

Abstract: A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

公开(公告)号：US09087872B2

公开(公告)日：2015-07-21

申请号：US14168167

申请日：2014-01-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent Favennec ,  Arnaud Tournier ,  François Roy

IPC: H01L21/762 ,  H01L27/146

CPC classification number: H01L21/76224 ,  H01L21/76237 ,  H01L27/1463

Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.

Abstract translation: 一种结构，其包括在衬底中的至少一个DTI型绝缘沟槽，所述沟槽位于形成像素的衬底的至少一个有源区域的外围，所述绝缘沟槽包括填充有电介质材料的腔体， 该腔被由硼掺杂材料制成的层覆盖。

公开(公告)号：US20130270662A1

公开(公告)日：2013-10-17

申请号：US13858389

申请日：2013-04-08

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Vincent Fiori

IPC: H01L31/18 ,  H01L31/02

CPC classification number: H01L31/18 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a handle on the first surface; defining trenches in the handle, the trenches forming a pattern in the handle; and installing, on a hollow curved substrate, the obtained device on the free surface side of the handle, the pattern being selected according to the shape of the support surface.

Abstract translation: 一种用于制造图像传感器的方法，包括以下步骤：在半导体衬底的第一表面上形成图像传感器的元件结构; 在第一个表面上安装手柄; 在手柄中限定沟槽，沟槽在手柄中形成图案; 并且在空心弯曲基板上将所获得的装置安装在手柄的自由表面侧上，根据支撑表面的形状选择图案。

公开(公告)号：US09917124B2

公开(公告)日：2018-03-13

申请号：US14919836

申请日：2015-10-22

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives ,  STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (GRENOBLE 2) SAS

Inventor： Yvon Cazaux ,  François Roy ,  Arnaud Laflaquiere ,  Marie Guillon

IPC: H01L27/146 ,  H01L27/148 ,  H01L27/12

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/1463

Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

公开(公告)号：US20180047770A1

公开(公告)日：2018-02-15

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US09825080B2

公开(公告)日：2017-11-21

申请号：US14973344

申请日：2015-12-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nayera Ahmed ,  François Roy

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

公开(公告)号：US09437674B2

公开(公告)日：2016-09-06

申请号：US14660601

申请日：2015-03-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nayera Ahmed ,  François Roy

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/763

CPC classification number: H01L29/0649 ,  H01L21/76202 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/76227 ,  H01L21/76229 ,  H01L21/763

Abstract: A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.

Abstract translation: 一种制造绝缘沟槽的方法，包括以下连续步骤：a）在半导体衬底上形成包括第一可选蚀刻材料层的第一掩模结构，并将沟槽蚀刻到衬底中; b）在沟槽壁上形成绝缘涂层并用掺杂多晶硅填充沟槽; c）形成贯穿所述沟槽的氧化硅插塞，其基本上一直延伸到所述衬底的上表面并突出到所述衬底的上表面上方; 和d）去除第一材料的层。